KSP44TF
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- Mfr.Part #
- KSP44TF
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 400V 0.3A TO92-3
- Stock
- 27,782
- In Stock ：
- 27,782
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temperature :
- 150°C TJ
- Max Power Dissipation :
- 625mW
- Length :
- 5.2mm
- Element Configuration :
- Single
- Voltage - Rated DC :
- 400V
- Contact Plating :
- Tin
- Base Part Number :
- KSP44
- Packaging :
- Tape and Reel (TR)
- Current Rating :
- 300mA
- ECCN Code :
- EAR99
- Pbfree Code :
- yes
- hFE Min :
- 50
- Emitter Base Voltage (VEBO) :
- 6V
- Number of Elements :
- 1
- Number of Terminations :
- 3
- Number of Pins :
- 3
- Polarity/Channel Type :
- NPN
- Current - Collector Cutoff (Max) :
- 500nA
- Radiation Hardening :
- No
- Max Collector Current :
- 300mA
- JESD-609 Code :
- e3
- Lifecycle Status :
- ACTIVE (Last Updated: 20 hours ago)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Breakdown Voltage :
- 400V
- REACH SVHC :
- No SVHC
- RoHS Status :
- ROHS3 Compliant
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 10mA 10V
- Weight :
- 240mg
- Published :
- 2007
- Lead Free :
- Lead Free
- Height :
- 5.33mm
- Collector Emitter Saturation Voltage :
- 750mV
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Factory Lead Time :
- 6 Weeks
- Mount :
- Through Hole
- Max Frequency :
- 1MHz
- Collector Emitter Breakdown Voltage :
- 400V
- Transistor Type :
- NPN
- Width :
- 4.19mm
- Mounting Type :
- Through Hole
- Collector Base Voltage (VCBO) :
- 500V
- Collector Emitter Voltage (VCEO) :
- 400V
- Vce Saturation (Max) @ Ib, Ic :
- 750mV @ 5mA, 50mA
- Power Dissipation :
- 625mW
- Transistor Element Material :
- SILICON
- Terminal Position :
- BOTTOM
- Datasheets
- KSP44TF
NPN 150°C TJ 500nA 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole
KSP44TF Overview
In this device, the DC current gain is 50 @ 10mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 750mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 750mV @ 5mA, 50mA.Keeping the emitter base voltage at 6V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (300mA).An input voltage of 400V volts is the breakdown voltage.Maximum collector currents can be below 300mA volts.
KSP44TF Features
the DC current gain for this device is 50 @ 10mA 10V
a collector emitter saturation voltage of 750mV
the vce saturation(Max) is 750mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
the current rating of this device is 300mA
KSP44TF Applications
There are a lot of ON Semiconductor
KSP44TF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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