KSP42BU
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- Mfr.Part #
- KSP42BU
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN 300V 0.5A TO92-3
- Stock
- 4
- In Stock ：
- 4
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Element Configuration :
- Single
- Polarity/Channel Type :
- NPN
- Collector Base Voltage (VCBO) :
- 300V
- Packaging :
- Bulk
- Base Part Number :
- KSP42
- Number of Elements :
- 1
- Height :
- 4.58mm
- hFE Min :
- 40
- Factory Lead Time :
- 6 Weeks
- Collector Emitter Breakdown Voltage :
- 300V
- Published :
- 2002
- Frequency :
- 50MHz
- Operating Temperature :
- 150°C TJ
- Emitter Base Voltage (VEBO) :
- 6V
- Max Collector Current :
- 500mA
- Mount :
- Through Hole
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 2mA, 20mA
- Transistor Application :
- AMPLIFIER
- Transistor Type :
- NPN
- Gain Bandwidth Product :
- 50MHz
- Transition Frequency :
- 50MHz
- Voltage - Rated DC :
- 300V
- Radiation Hardening :
- No
- Max Power Dissipation :
- 625mW
- Current Rating :
- 500mA
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Pbfree Code :
- yes
- Lifecycle Status :
- ACTIVE (Last Updated: 16 hours ago)
- Transistor Element Material :
- SILICON
- Weight :
- 179mg
- ECCN Code :
- EAR99
- JESD-609 Code :
- e3
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Lead Free :
- Lead Free
- Power Dissipation :
- 625mW
- Mounting Type :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 3
- Collector Emitter Saturation Voltage :
- 500mV
- Collector Emitter Voltage (VCEO) :
- 300V
- Terminal Position :
- BOTTOM
- Number of Pins :
- 3
- RoHS Status :
- ROHS3 Compliant
- Length :
- 4.58mm
- Terminal Finish :
- Tin (Sn)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 30mA 10V
- Width :
- 3.86mm
- Datasheets
- KSP42BU
,TO-226_straightlead.jpg)
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
KSP42BU Overview
In this device, the DC current gain is 40 @ 30mA 10V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 500mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 2mA, 20mA.With the emitter base voltage set at 6V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 500mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 50MHz.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
KSP42BU Features
the DC current gain for this device is 40 @ 30mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 6V
the current rating of this device is 500mA
a transition frequency of 50MHz
KSP42BU Applications
There are a lot of ON Semiconductor
KSP42BU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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