KSP44TF
- Mfr.Part #
- KSP44TF
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 400V 0.3A TO92-3
- Stock
- 1,945
- In Stock :
- 1,945
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- ECCN Code :
- EAR99
- Number of Pins :
- 3
- Polarity/Channel Type :
- NPN
- Height :
- 5.33mm
- Terminal Position :
- BOTTOM
- Max Collector Current :
- 300mA
- Collector Emitter Breakdown Voltage :
- 400V
- Number of Terminations :
- 3
- RoHS Status :
- ROHS3 Compliant
- Pbfree Code :
- yes
- Max Breakdown Voltage :
- 400V
- Number of Elements :
- 1
- Lead Free :
- Lead Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Voltage (VCEO) :
- 400V
- Voltage - Rated DC :
- 400V
- Power Dissipation :
- 625mW
- Current - Collector Cutoff (Max) :
- 500nA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 10mA 10V
- Transistor Element Material :
- SILICON
- Factory Lead Time :
- 6 Weeks
- Length :
- 5.2mm
- Base Part Number :
- KSP44
- hFE Min :
- 50
- REACH SVHC :
- No SVHC
- Contact Plating :
- Tin
- Packaging :
- Tape and Reel (TR)
- Max Power Dissipation :
- 625mW
- Width :
- 4.19mm
- Lifecycle Status :
- ACTIVE (Last Updated: 20 hours ago)
- Current Rating :
- 300mA
- Collector Base Voltage (VCBO) :
- 500V
- Weight :
- 240mg
- Transistor Type :
- NPN
- Emitter Base Voltage (VEBO) :
- 6V
- Mount :
- Through Hole
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Max Frequency :
- 1MHz
- Collector Emitter Saturation Voltage :
- 750mV
- Element Configuration :
- Single
- Radiation Hardening :
- No
- JESD-609 Code :
- e3
- Published :
- 2007
- Mounting Type :
- Through Hole
- Operating Temperature :
- 150°C TJ
- Vce Saturation (Max) @ Ib, Ic :
- 750mV @ 5mA, 50mA
- Datasheets
- KSP44TF

NPN 150°C TJ 500nA 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole
KSP44TF Overview
In this device, the DC current gain is 50 @ 10mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 750mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 750mV @ 5mA, 50mA.Keeping the emitter base voltage at 6V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (300mA).An input voltage of 400V volts is the breakdown voltage.Maximum collector currents can be below 300mA volts.
KSP44TF Features
the DC current gain for this device is 50 @ 10mA 10V
a collector emitter saturation voltage of 750mV
the vce saturation(Max) is 750mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
the current rating of this device is 300mA
KSP44TF Applications
There are a lot of ON Semiconductor
KSP44TF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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