KSP43TA
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- Mfr.Part #
- KSP43TA
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 200V 0.5A TO92-3
- Stock
- 33,570
- In Stock ：
- 33,570
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Saturation Voltage :
- 500mV
- Collector Emitter Breakdown Voltage :
- 200V
- Power Dissipation :
- 625mW
- hFE Min :
- 40
- RoHS Status :
- ROHS3 Compliant
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Number of Terminations :
- 3
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Lead Free :
- Lead Free
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 30mA 10V
- Terminal Finish :
- Tin (Sn)
- Frequency :
- 50MHz
- Max Collector Current :
- 500mA
- Weight :
- 240mg
- Base Part Number :
- KSP43
- Collector Base Voltage (VCBO) :
- 200V
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 2mA, 20mA
- Mount :
- Through Hole
- Transistor Type :
- NPN
- Voltage - Rated DC :
- 200V
- Operating Temperature :
- 150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current Rating :
- 500mA
- Emitter Base Voltage (VEBO) :
- 6V
- Transition Frequency :
- 50MHz
- Mounting Type :
- Through Hole
- Factory Lead Time :
- 2 Weeks
- Terminal Position :
- BOTTOM
- Lifecycle Status :
- ACTIVE (Last Updated: 18 hours ago)
- Radiation Hardening :
- No
- Transistor Element Material :
- SILICON
- Gain Bandwidth Product :
- 50MHz
- Element Configuration :
- Single
- Transistor Application :
- AMPLIFIER
- Max Breakdown Voltage :
- 200V
- Max Power Dissipation :
- 625mW
- JESD-609 Code :
- e3
- Published :
- 2007
- Number of Pins :
- 3
- Polarity/Channel Type :
- NPN
- Collector Emitter Voltage (VCEO) :
- 200V
- ECCN Code :
- EAR99
- Packaging :
- Tape and Box (TB)
- Number of Elements :
- 1
- Pbfree Code :
- yes
- Datasheets
- KSP43TA
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
KSP43TA Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 40 @ 30mA 10V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 500mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 2mA, 20mA.The emitter base voltage can be kept at 6V for high efficiency.The current rating of this fuse is 500mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 50MHz.The breakdown input voltage is 200V volts.Single BJT transistor is possible to have a collector current as low as 500mA volts at Single BJT transistors maximum.
KSP43TA Features
the DC current gain for this device is 40 @ 30mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 6V
the current rating of this device is 500mA
a transition frequency of 50MHz
KSP43TA Applications
There are a lot of ON Semiconductor
KSP43TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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