KSP43TA
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- Mfr.Part #
- KSP43TA
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 200V 0.5A TO92-3
- Stock
- 33,570
- In Stock ：
- 33,570
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Position :
- BOTTOM
- Max Power Dissipation :
- 625mW
- ECCN Code :
- EAR99
- Element Configuration :
- Single
- Base Part Number :
- KSP43
- hFE Min :
- 40
- Collector Base Voltage (VCBO) :
- 200V
- Emitter Base Voltage (VEBO) :
- 6V
- Polarity/Channel Type :
- NPN
- Transistor Element Material :
- SILICON
- Collector Emitter Voltage (VCEO) :
- 200V
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Terminal Finish :
- Tin (Sn)
- Pbfree Code :
- yes
- Published :
- 2007
- Operating Temperature :
- 150°C TJ
- Frequency :
- 50MHz
- Lead Free :
- Lead Free
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Transition Frequency :
- 50MHz
- Mounting Type :
- Through Hole
- Transistor Application :
- AMPLIFIER
- Gain Bandwidth Product :
- 50MHz
- RoHS Status :
- ROHS3 Compliant
- Factory Lead Time :
- 2 Weeks
- JESD-609 Code :
- e3
- Collector Emitter Breakdown Voltage :
- 200V
- Radiation Hardening :
- No
- Packaging :
- Tape and Box (TB)
- Power Dissipation :
- 625mW
- Collector Emitter Saturation Voltage :
- 500mV
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Voltage - Rated DC :
- 200V
- Weight :
- 240mg
- Lifecycle Status :
- ACTIVE (Last Updated: 18 hours ago)
- Max Collector Current :
- 500mA
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 2mA, 20mA
- Mount :
- Through Hole
- Transistor Type :
- NPN
- Number of Pins :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 30mA 10V
- Current Rating :
- 500mA
- Max Breakdown Voltage :
- 200V
- Number of Terminations :
- 3
- Number of Elements :
- 1
- Datasheets
- KSP43TA
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
KSP43TA Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 40 @ 30mA 10V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 500mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 2mA, 20mA.The emitter base voltage can be kept at 6V for high efficiency.The current rating of this fuse is 500mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 50MHz.The breakdown input voltage is 200V volts.Single BJT transistor is possible to have a collector current as low as 500mA volts at Single BJT transistors maximum.
KSP43TA Features
the DC current gain for this device is 40 @ 30mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 6V
the current rating of this device is 500mA
a transition frequency of 50MHz
KSP43TA Applications
There are a lot of ON Semiconductor
KSP43TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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