IXTH96N25T

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Tradename :

HiPerFET

Surface Mount :

No

Package Shape :

RECTANGULAR

Number of Elements :

1

Length :

16.26 mm

Maximum Operating Temperature :

+ 150 C

Transistor Element Material :

SILICON

Pin Count :

3

DS Breakdown Voltage-Min :

250 V

Configuration :

Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-30 Code :

R-PSFM-T3

Supplier Device Package :

TO-247 (IXTH)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Operating Temperature :

-55°C~150°C TJ

FET Feature :

--

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation (Max) :

625W (Tc)

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

29m Ω @ 500mA, 10V

Terminal Position :

Single

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Power Dissipation :

625W

Drain to Source Voltage (Vdss) :

250V

Number of Channels :

1 Channel

Avalanche Energy Rating (Eas) :

2000 mJ

Number of Terminals :

3

Reach Compliance Code :

Compliant

Base Product Number :

IXTH96

Factory Lead Time :

30 Weeks

Element Configuration :

Single

Pulsed Drain Current-Max (IDM) :

250A

Drive Voltage (Max Rds On,Min Rds On) :

10V

RoHS :

Details

Fall Time (Typ) :

28 ns

Mounting Style :

Through Hole

JEDEC-95 Code :

TO-247AD

Additional Feature :

AVALANCHE RATED

Package / Case :

TO-247-3

Manufacturer :

IXYS

Gate Charge (Qg) (Max) @ Vgs :

114nC @ 10V

Power Dissipation-Max :

625W Tc

Packaging :

Tube

Drain to Source Breakdown Voltage :

250V

Vgs(th) (Max) @ Id :

5V @ 1mA

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Turn-Off Delay Time :

59 ns

Transistor Polarity :

N-Channel

Number of Terminations :

3

Qualification Status :

Not Qualified

Width :

5.3 mm

Polarity/Channel Type :

N-Channel

Case Connection :

DRAIN

Brand :

IXYS

Mounting Type :

Through Hole

Published :

2007

Pbfree Code :

yes

Product Status :

Active

Series :

TrenchHV™

Drain-source On Resistance-Max :

0.029Ohm

Transistor Type :

1 N-Channel

Package :

Tube

JESD-609 Code :

e1

Rise Time :

22ns

Minimum Operating Temperature :

- 55 C

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Subcategory :

MOSFETs

Vgs (Max) :

±30V

FET Type :

N-Channel

Product Type :

MOSFET

Gate to Source Voltage (Vgs) :

30V

Height :

21.46 mm

Channel Mode :

Enhancement

Continuous Drain Current (ID) :

96A

Current - Continuous Drain (Id) @ 25°C :

96A Tc

Product Category :

MOSFET

Input Capacitance (Ciss) (Max) @ Vds :

6100pF @ 25V

Mount :

Through Hole

RoHS Status :

ROHS3 Compliant

Terminal Form :

THROUGH-HOLE