IXTH96N20P

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Mfr.Part #
IXTH96N20P
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 200V 96A TO247
Stock
53
In Stock :
53

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
RoHS :
Details
Product Status :
Active
Base Product Number :
IXTH96
Reach Compliance Code :
Compliant
Drain to Source Voltage (Vdss) :
200V
Transistor Type :
1 N-Channel
Lead Free :
Lead Free
Rds On (Max) @ Id, Vgs :
24m Ω @ 500mA, 10V
Gate to Source Voltage (Vgs) :
20V
Input Capacitance (Ciss) (Max) @ Vds :
4800pF @ 25V
JESD-609 Code :
e1
Continuous Drain Current Id :
96A
Transistor Application :
SWITCHING
Channel Mode :
Enhancement
Mount :
Through Hole
Published :
2006
Subcategory :
MOSFETs
Package Shape :
RECTANGULAR
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Terminal Position :
Single
Power Dissipation-Max :
600W Tc
FET Type :
N-Channel
MSL :
-
Surface Mount :
No
Avalanche Energy Rating (Eas) :
1500 mJ
Channel Type :
N Channel
Width :
5.3 mm
RoHS Status :
ROHS3 Compliant
Vgs(th) (Max) @ Id :
5V @ 250μA
Transistor Element Material :
SILICON
Factory Lead Time :
28 Weeks
Qualification Status :
Not Qualified
Type :
PolarHT Power MOSFET
Number of Terminals :
3
Fall Time (Typ) :
30 ns
Supplier Device Package :
TO-247 (IXTH)
Package :
Tube
Threshold Voltage :
5V
JEDEC-95 Code :
TO-247AD
Drain-source On Resistance-Max :
0.024 Ω
ECCN Code :
EAR99
Height :
21.46 mm
FET Feature :
--
DS Breakdown Voltage-Min :
200 V
Terminal Form :
THROUGH-HOLE
Turn-Off Delay Time :
75 ns
Resistance :
24mOhm
Case Connection :
DRAIN
Number of Terminations :
3
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Number of Channels :
1 Channel
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
JESD-30 Code :
R-PSFM-T3
Element Configuration :
Single
Current - Continuous Drain (Id) @ 25°C :
96A Tc
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Product Category :
MOSFET
Length :
16.26 mm
Manufacturer :
IXYS
Additional Feature :
AVALANCHE RATED
Series :
PolarHT™
Continuous Drain Current (ID) :
96A
Rise Time :
30ns
REACH SVHC :
No SVHC
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Number of Pins :
3
Drive Voltage (Max Rds On,Min Rds On) :
10V
Pin Count :
3
Minimum Operating Temperature :
- 55 C
Configuration :
Single
Product Type :
MOSFET
Brand :
IXYS
Packaging :
Tube
Power Dissipation :
600W
Operating Mode :
ENHANCEMENT MODE
Vgs (Max) :
±20V
Transistor Polarity :
N-Channel
Number of Elements :
1
Gate Charge (Qg) (Max) @ Vgs :
145nC @ 10V
Operating Temperature :
-55°C~175°C TJ
Polarity/Channel Type :
N-Channel
Mounting Type :
Through Hole
Drain to Source Breakdown Voltage :
200V
Pbfree Code :
yes
Qualification :
-
Power Dissipation (Max) :
600W (Tc)
Maximum Operating Temperature :
+ 175 C
Package / Case :
TO-247-3
Pulsed Drain Current-Max (IDM) :
225A
Mounting Style :
Through Hole
Tradename :
PolarHT
Datasheets
IXTH96N20P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTH96N20P from Chip IC,where excellence meets affordability. This product stands out with its Type:PolarHT Power MOSFET, Number of Terminations:3, Number of Channels:1 Channel, Number of Pins:3, Operating Temperature:-55°C~175°C TJ, Mounting Type:Through Hole, Package / Case:TO-247-3, IXTH96N20P pinout, IXTH96N20P datasheet PDF, IXTH96N20P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTH96N20P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTH96N20P


N-Channel Tube 24m Ω @ 500mA, 10V ±20V 4800pF @ 25V 145nC @ 10V 200V TO-247-3

IXTH96N20P Overview


This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 1500 mJ.The maximum input capacitance of this device is 4800pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 96A.When VGS=200V, and ID flows to VDS at 200VVDS, the drain-source breakdown voltage is 200V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 75 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 225A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is 5V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 200 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 200V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

IXTH96N20P Features


the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 96A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 225A.
a threshold voltage of 5V
a 200V drain to source voltage (Vdss)


IXTH96N20P Applications


There are a lot of IXYS
IXTH96N20P applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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