IXTH96N20P
- Mfr.Part #
- IXTH96N20P
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 96A TO247
- Stock
- 53
- In Stock :
- 53
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- RoHS :
- Details
- Product Status :
- Active
- Base Product Number :
- IXTH96
- Reach Compliance Code :
- Compliant
- Drain to Source Voltage (Vdss) :
- 200V
- Transistor Type :
- 1 N-Channel
- Lead Free :
- Lead Free
- Rds On (Max) @ Id, Vgs :
- 24m Ω @ 500mA, 10V
- Gate to Source Voltage (Vgs) :
- 20V
- Input Capacitance (Ciss) (Max) @ Vds :
- 4800pF @ 25V
- JESD-609 Code :
- e1
- Continuous Drain Current Id :
- 96A
- Transistor Application :
- SWITCHING
- Channel Mode :
- Enhancement
- Mount :
- Through Hole
- Published :
- 2006
- Subcategory :
- MOSFETs
- Package Shape :
- RECTANGULAR
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Position :
- Single
- Power Dissipation-Max :
- 600W Tc
- FET Type :
- N-Channel
- MSL :
- -
- Surface Mount :
- No
- Avalanche Energy Rating (Eas) :
- 1500 mJ
- Channel Type :
- N Channel
- Width :
- 5.3 mm
- RoHS Status :
- ROHS3 Compliant
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Transistor Element Material :
- SILICON
- Factory Lead Time :
- 28 Weeks
- Qualification Status :
- Not Qualified
- Type :
- PolarHT Power MOSFET
- Number of Terminals :
- 3
- Fall Time (Typ) :
- 30 ns
- Supplier Device Package :
- TO-247 (IXTH)
- Package :
- Tube
- Threshold Voltage :
- 5V
- JEDEC-95 Code :
- TO-247AD
- Drain-source On Resistance-Max :
- 0.024 Ω
- ECCN Code :
- EAR99
- Height :
- 21.46 mm
- FET Feature :
- --
- DS Breakdown Voltage-Min :
- 200 V
- Terminal Form :
- THROUGH-HOLE
- Turn-Off Delay Time :
- 75 ns
- Resistance :
- 24mOhm
- Case Connection :
- DRAIN
- Number of Terminations :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Number of Channels :
- 1 Channel
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- JESD-30 Code :
- R-PSFM-T3
- Element Configuration :
- Single
- Current - Continuous Drain (Id) @ 25°C :
- 96A Tc
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Product Category :
- MOSFET
- Length :
- 16.26 mm
- Manufacturer :
- IXYS
- Additional Feature :
- AVALANCHE RATED
- Series :
- PolarHT™
- Continuous Drain Current (ID) :
- 96A
- Rise Time :
- 30ns
- REACH SVHC :
- No SVHC
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Number of Pins :
- 3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Pin Count :
- 3
- Minimum Operating Temperature :
- - 55 C
- Configuration :
- Single
- Product Type :
- MOSFET
- Brand :
- IXYS
- Packaging :
- Tube
- Power Dissipation :
- 600W
- Operating Mode :
- ENHANCEMENT MODE
- Vgs (Max) :
- ±20V
- Transistor Polarity :
- N-Channel
- Number of Elements :
- 1
- Gate Charge (Qg) (Max) @ Vgs :
- 145nC @ 10V
- Operating Temperature :
- -55°C~175°C TJ
- Polarity/Channel Type :
- N-Channel
- Mounting Type :
- Through Hole
- Drain to Source Breakdown Voltage :
- 200V
- Pbfree Code :
- yes
- Qualification :
- -
- Power Dissipation (Max) :
- 600W (Tc)
- Maximum Operating Temperature :
- + 175 C
- Package / Case :
- TO-247-3
- Pulsed Drain Current-Max (IDM) :
- 225A
- Mounting Style :
- Through Hole
- Tradename :
- PolarHT
- Datasheets
- IXTH96N20P
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N-Channel Tube 24m Ω @ 500mA, 10V ±20V 4800pF @ 25V 145nC @ 10V 200V TO-247-3
IXTH96N20P Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 1500 mJ.The maximum input capacitance of this device is 4800pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 96A.When VGS=200V, and ID flows to VDS at 200VVDS, the drain-source breakdown voltage is 200V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 75 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 225A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is 5V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 200 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 200V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IXTH96N20P Features
the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 96A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 225A.
a threshold voltage of 5V
a 200V drain to source voltage (Vdss)
IXTH96N20P Applications
There are a lot of IXYS
IXTH96N20P applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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