IXTH90P10P

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Mfr.Part #
IXTH90P10P
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET P-CH 100V 90A TO247
Stock
3,955
In Stock :
3,955

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
JESD-30 Code :
R-PSFM-T3
Power Dissipation :
462W
Number of Elements :
1
Channel Mode :
Enhancement
Power Dissipation-Max :
462W Tc
Rise Time :
77 ns
Avalanche Energy Rating (Eas) :
2500 mJ
Series :
PolarP™
Rds On (Max) @ Id, Vgs :
25m Ω @ 45A, 10V
Package / Case :
TO-247-3
Packaging :
Tube
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
FET Feature :
--
Channels :
1
Maximum Operating Temperature :
+ 150 C
Transistor Polarity :
P-Channel
Continuous Drain Current (ID) :
90A
Configuration :
Single
RoHS :
Details
Pulsed Drain Current-Max (IDM) :
225A
Factory Lead Time :
28 Weeks
FET Type :
P-Channel
Mount :
Through Hole
Element Configuration :
Single
Manufacturer :
IXYS
Transistor Type :
1 P-Channel
Gate Charge (Qg) (Max) @ Vgs :
120nC @ 10V
Mounting Type :
Through Hole
Minimum Operating Temperature :
- 55 C
Transistor Element Material :
SILICON
Published :
2009
Mounting Style :
Through Hole
Operating Mode :
ENHANCEMENT MODE
Enclosure :
TO 247AD
Lead Free :
Lead Free
ECCN Code :
EAR99
Gate to Source Voltage (Vgs) :
20V
Radiation Hardening :
No
Pbfree Code :
yes
Transistor Application :
SWITCHING
Drain to Source Breakdown Voltage :
-100V
Content :
1pc(s)
Drain to Source Voltage (Vdss) :
100V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Package :
Tube
Type :
P-Channel
JESD-609 Code :
e1
Brand :
IXYS
RoHS Status :
ROHS3 Compliant
Reach Compliance Code :
Unknown
Power (max) P(TOT) :
462W
Vgs(th) (Max) @ Id :
4V @ 250µA
Product Status :
Active
Operating Temperature :
-55°C~175°C TJ
Supplier Device Package :
TO-247 (IXTH)
Additional Feature :
AVALANCHE RATED
Pin Count :
3
Product Type :
MOSFET
Power Dissipation (Max) :
462W (Tc)
Number of Channels :
1 Channel
Max. operating temperature :
+175°C
Number of Terminations :
3
Product Category :
MOSFET
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Resistance :
25mOhm
Manuf. code :
IXY
Case Connection :
DRAIN
Input Capacitance (Ciss) (Max) @ Vds :
5800pF @ 25V
Base Product Number :
IXTH90
Current - Continuous Drain (Id) @ 25°C :
90A Tc
Vgs (Max) :
±20V
Datasheets
IXTH90P10P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTH90P10P from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-247-3, Mounting Type:Through Hole, Type:P-Channel, Operating Temperature:-55°C~175°C TJ, Number of Channels:1 Channel, Number of Terminations:3, IXTH90P10P pinout, IXTH90P10P datasheet PDF, IXTH90P10P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTH90P10P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTH90P10P


P-Channel Tube 25m Ω @ 45A, 10V ±20V 5800pF @ 25V 120nC @ 10V 100V TO-247-3

IXTH90P10P Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 2500 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 5800pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has -100V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals -100V.There is a peak drain current of 225A, its maximum pulsed drain current.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The transistor must receive a 100V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

IXTH90P10P Features


the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 90A
a drain-to-source breakdown voltage of -100V voltage
based on its rated peak drain current 225A.
a 100V drain to source voltage (Vdss)


IXTH90P10P Applications


There are a lot of IXYS
IXTH90P10P applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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