IXTH8P50
- Mfr.Part #
- IXTH8P50
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET P-CH 500V 8A TO247
- Stock
- 10,752
- In Stock :
- 10,752
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- FET Type :
- P-Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Mount :
- Through Hole
- Input Capacitance (Ciss) (Max) @ Vds :
- 3400pF @ 25V
- Transistor Type :
- 1 P-Channel
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Mounting Style :
- Through Hole
- Number of Channels :
- 1 Channel
- Resistance :
- 1.2Ohm
- JEDEC-95 Code :
- TO-247AD
- Minimum Operating Temperature :
- - 55 C
- Power Dissipation-Max (Abs) :
- 150 W
- Product Status :
- Active
- Package :
- Tube
- Moisture Sensitivity Level (MSL) :
- Not Applicable
- Series :
- --
- Pbfree Code :
- yes
- Power Dissipation-Max :
- 180W Tc
- JESD-30 Code :
- R-PSFM-T3
- Power Dissipation Ambient-Max :
- 180 W
- Operating Temperature :
- -55°C~150°C TJ
- Package / Case :
- TO-247-3
- Channel Mode :
- Enhancement
- Number of Terminations :
- 3
- RoHS Status :
- ROHS3 Compliant
- Rds On (Max) @ Id, Vgs :
- 1.2 Ω @ 4A, 10V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Number of Elements :
- 1
- Transistor Application :
- SWITCHING
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Pin Count :
- 3
- Product Type :
- MOSFET
- DS Breakdown Voltage-Min :
- 500 V
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Case Connection :
- DRAIN
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Drain to Source Voltage (Vdss) :
- 500V
- Width :
- 5.3 mm
- Mounting Type :
- Through Hole
- Package Shape :
- RECTANGULAR
- Current - Continuous Drain (Id) @ 25°C :
- 8A Tc
- Vgs (Max) :
- ±20V
- Length :
- 16.26 mm
- Product Category :
- MOSFET
- Maximum Operating Temperature :
- + 150 C
- Power Dissipation (Max) :
- 180W (Tc)
- Pulsed Drain Current-Max (IDM) :
- 32 A
- Qualification Status :
- Not Qualified
- Voltage - Rated DC :
- -500V
- Drain Current-Max (Abs) (ID) :
- 8A
- Factory Lead Time :
- 28 Weeks
- JESD-609 Code :
- e1
- Configuration :
- Single
- Number of Terminals :
- 3
- Drain to Source Breakdown Voltage :
- -500V
- Type :
- Standard Power MOSFET
- Operating Mode :
- ENHANCEMENT MODE
- Current Rating :
- -8A
- Polarity/Channel Type :
- P-Channel
- Element Configuration :
- Single
- Terminal Position :
- Single
- Power Dissipation :
- 180W
- Reach Compliance Code :
- Compliant
- RoHS :
- Details
- Height :
- 21.46 mm
- Base Product Number :
- IXTH8
- Gate Charge (Qg) (Max) @ Vgs :
- 130nC @ 10V
- Transistor Polarity :
- P-Channel
- Terminal Form :
- THROUGH-HOLE
- FET Feature :
- --
- Manufacturer :
- IXYS
- Transistor Element Material :
- SILICON
- Supplier Device Package :
- TO-247 (IXTH)
- Published :
- 2005
- Turn-Off Delay Time :
- 35 ns
- Fall Time (Typ) :
- 35 ns
- Rise Time :
- 27ns
- Surface Mount :
- No
- Drain-source On Resistance-Max :
- 1.2 Ω
- Number of Pins :
- 3
- Continuous Drain Current (ID) :
- 8A
- Packaging :
- Tube
- Lead Free :
- Lead Free
- Gate to Source Voltage (Vgs) :
- 20V
- Additional Feature :
- AVALANCHE RATED
- Brand :
- IXYS
- Datasheets
- IXTH8P50
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P-Channel Tube 1.2 Ω @ 4A, 10V ±20V 3400pF @ 25V 130nC @ 10V 500V TO-247-3
IXTH8P50 Overview
A device's maximum input capacitance is 3400pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 8A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=-500V, and this device has a drain-to-source breakdown voltage of -500V voltage.Its drain current is 8A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 35 ns.Its maximum pulsed drain current is 32 A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.For normal operation, maintain the DS breakdown voltage above 500 V.To operate this transistor, you need to apply a 500V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IXTH8P50 Features
a continuous drain current (ID) of 8A
a drain-to-source breakdown voltage of -500V voltage
the turn-off delay time is 35 ns
based on its rated peak drain current 32 A.
a 500V drain to source voltage (Vdss)
IXTH8P50 Applications
There are a lot of IXYS
IXTH8P50 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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