IXTH8P50

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

P-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mount :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

3400pF @ 25V

Transistor Type :

1 P-Channel

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mounting Style :

Through Hole

Number of Channels :

1 Channel

Resistance :

1.2Ohm

JEDEC-95 Code :

TO-247AD

Minimum Operating Temperature :

- 55 C

Power Dissipation-Max (Abs) :

150 W

Product Status :

Active

Package :

Tube

Moisture Sensitivity Level (MSL) :

Not Applicable

Series :

--

Pbfree Code :

yes

Power Dissipation-Max :

180W Tc

JESD-30 Code :

R-PSFM-T3

Power Dissipation Ambient-Max :

180 W

Operating Temperature :

-55°C~150°C TJ

Package / Case :

TO-247-3

Channel Mode :

Enhancement

Number of Terminations :

3

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

1.2 Ω @ 4A, 10V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Elements :

1

Transistor Application :

SWITCHING

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Pin Count :

3

Product Type :

MOSFET

DS Breakdown Voltage-Min :

500 V

Vgs(th) (Max) @ Id :

5V @ 250μA

Case Connection :

DRAIN

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain to Source Voltage (Vdss) :

500V

Width :

5.3 mm

Mounting Type :

Through Hole

Package Shape :

RECTANGULAR

Current - Continuous Drain (Id) @ 25°C :

8A Tc

Vgs (Max) :

±20V

Length :

16.26 mm

Product Category :

MOSFET

Maximum Operating Temperature :

+ 150 C

Power Dissipation (Max) :

180W (Tc)

Pulsed Drain Current-Max (IDM) :

32 A

Qualification Status :

Not Qualified

Voltage - Rated DC :

-500V

Drain Current-Max (Abs) (ID) :

8A

Factory Lead Time :

28 Weeks

JESD-609 Code :

e1

Configuration :

Single

Number of Terminals :

3

Drain to Source Breakdown Voltage :

-500V

Type :

Standard Power MOSFET

Operating Mode :

ENHANCEMENT MODE

Current Rating :

-8A

Polarity/Channel Type :

P-Channel

Element Configuration :

Single

Terminal Position :

Single

Power Dissipation :

180W

Reach Compliance Code :

Compliant

RoHS :

Details

Height :

21.46 mm

Base Product Number :

IXTH8

Gate Charge (Qg) (Max) @ Vgs :

130nC @ 10V

Transistor Polarity :

P-Channel

Terminal Form :

THROUGH-HOLE

FET Feature :

--

Manufacturer :

IXYS

Transistor Element Material :

SILICON

Supplier Device Package :

TO-247 (IXTH)

Published :

2005

Turn-Off Delay Time :

35 ns

Fall Time (Typ) :

35 ns

Rise Time :

27ns

Surface Mount :

No

Drain-source On Resistance-Max :

1.2 Ω

Number of Pins :

3

Continuous Drain Current (ID) :

8A

Packaging :

Tube

Lead Free :

Lead Free

Gate to Source Voltage (Vgs) :

20V

Additional Feature :

AVALANCHE RATED

Brand :

IXYS