IXTH8P50
- Mfr.Part #
- IXTH8P50
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET P-CH 500V 8A TO247
- Stock
- 10,752
- In Stock :
- 10,752
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 8A Tc
- Product Status :
- Active
- Pin Count :
- 3
- Input Capacitance (Ciss) (Max) @ Vds :
- 3400pF @ 25V
- FET Type :
- P-Channel
- Type :
- Standard Power MOSFET
- Power Dissipation Ambient-Max :
- 180 W
- Polarity/Channel Type :
- P-Channel
- Turn-Off Delay Time :
- 35 ns
- Transistor Application :
- SWITCHING
- Manufacturer :
- IXYS
- Pulsed Drain Current-Max (IDM) :
- 32 A
- Pbfree Code :
- yes
- Series :
- --
- Drain to Source Breakdown Voltage :
- -500V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Power Dissipation :
- 180W
- Operating Mode :
- ENHANCEMENT MODE
- Moisture Sensitivity Level (MSL) :
- Not Applicable
- Mount :
- Through Hole
- Vgs (Max) :
- ±20V
- RoHS Status :
- ROHS3 Compliant
- FET Feature :
- --
- Published :
- 2005
- Number of Pins :
- 3
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Length :
- 16.26 mm
- Number of Terminals :
- 3
- Resistance :
- 1.2Ohm
- Drain Current-Max (Abs) (ID) :
- 8A
- Maximum Operating Temperature :
- + 150 C
- Channel Mode :
- Enhancement
- Surface Mount :
- No
- Reach Compliance Code :
- Compliant
- Package :
- Tube
- Packaging :
- Tube
- Element Configuration :
- Single
- Additional Feature :
- AVALANCHE RATED
- Height :
- 21.46 mm
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Factory Lead Time :
- 28 Weeks
- Current Rating :
- -8A
- Package Shape :
- RECTANGULAR
- Power Dissipation-Max :
- 180W Tc
- Package / Case :
- TO-247-3
- Product Category :
- MOSFET
- Drain to Source Voltage (Vdss) :
- 500V
- Qualification Status :
- Not Qualified
- Mounting Type :
- Through Hole
- Product Type :
- MOSFET
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Operating Temperature :
- -55°C~150°C TJ
- Case Connection :
- DRAIN
- Voltage - Rated DC :
- -500V
- Width :
- 5.3 mm
- Number of Channels :
- 1 Channel
- Base Product Number :
- IXTH8
- JESD-30 Code :
- R-PSFM-T3
- Power Dissipation-Max (Abs) :
- 150 W
- Rise Time :
- 27ns
- Terminal Form :
- THROUGH-HOLE
- Continuous Drain Current (ID) :
- 8A
- Minimum Operating Temperature :
- - 55 C
- Lead Free :
- Lead Free
- Brand :
- IXYS
- Transistor Element Material :
- SILICON
- Transistor Polarity :
- P-Channel
- Number of Terminations :
- 3
- JESD-609 Code :
- e1
- Configuration :
- Single
- Gate to Source Voltage (Vgs) :
- 20V
- Drain-source On Resistance-Max :
- 1.2 Ω
- Fall Time (Typ) :
- 35 ns
- Transistor Type :
- 1 P-Channel
- RoHS :
- Details
- Gate Charge (Qg) (Max) @ Vgs :
- 130nC @ 10V
- Number of Elements :
- 1
- Supplier Device Package :
- TO-247 (IXTH)
- Rds On (Max) @ Id, Vgs :
- 1.2 Ω @ 4A, 10V
- Terminal Position :
- Single
- DS Breakdown Voltage-Min :
- 500 V
- JEDEC-95 Code :
- TO-247AD
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Mounting Style :
- Through Hole
- Power Dissipation (Max) :
- 180W (Tc)
- Datasheets
- IXTH8P50
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P-Channel Tube 1.2 Ω @ 4A, 10V ±20V 3400pF @ 25V 130nC @ 10V 500V TO-247-3
IXTH8P50 Overview
A device's maximum input capacitance is 3400pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 8A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=-500V, and this device has a drain-to-source breakdown voltage of -500V voltage.Its drain current is 8A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 35 ns.Its maximum pulsed drain current is 32 A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.For normal operation, maintain the DS breakdown voltage above 500 V.To operate this transistor, you need to apply a 500V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IXTH8P50 Features
a continuous drain current (ID) of 8A
a drain-to-source breakdown voltage of -500V voltage
the turn-off delay time is 35 ns
based on its rated peak drain current 32 A.
a 500V drain to source voltage (Vdss)
IXTH8P50 Applications
There are a lot of IXYS
IXTH8P50 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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