IXTH8P50

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Mfr.Part #
IXTH8P50
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET P-CH 500V 8A TO247
Stock
10,752
In Stock :
10,752

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C :
8A Tc
Product Status :
Active
Pin Count :
3
Input Capacitance (Ciss) (Max) @ Vds :
3400pF @ 25V
FET Type :
P-Channel
Type :
Standard Power MOSFET
Power Dissipation Ambient-Max :
180 W
Polarity/Channel Type :
P-Channel
Turn-Off Delay Time :
35 ns
Transistor Application :
SWITCHING
Manufacturer :
IXYS
Pulsed Drain Current-Max (IDM) :
32 A
Pbfree Code :
yes
Series :
--
Drain to Source Breakdown Voltage :
-500V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Power Dissipation :
180W
Operating Mode :
ENHANCEMENT MODE
Moisture Sensitivity Level (MSL) :
Not Applicable
Mount :
Through Hole
Vgs (Max) :
±20V
RoHS Status :
ROHS3 Compliant
FET Feature :
--
Published :
2005
Number of Pins :
3
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Length :
16.26 mm
Number of Terminals :
3
Resistance :
1.2Ohm
Drain Current-Max (Abs) (ID) :
8A
Maximum Operating Temperature :
+ 150 C
Channel Mode :
Enhancement
Surface Mount :
No
Reach Compliance Code :
Compliant
Package :
Tube
Packaging :
Tube
Element Configuration :
Single
Additional Feature :
AVALANCHE RATED
Height :
21.46 mm
Drive Voltage (Max Rds On,Min Rds On) :
10V
Factory Lead Time :
28 Weeks
Current Rating :
-8A
Package Shape :
RECTANGULAR
Power Dissipation-Max :
180W Tc
Package / Case :
TO-247-3
Product Category :
MOSFET
Drain to Source Voltage (Vdss) :
500V
Qualification Status :
Not Qualified
Mounting Type :
Through Hole
Product Type :
MOSFET
Vgs(th) (Max) @ Id :
5V @ 250μA
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Operating Temperature :
-55°C~150°C TJ
Case Connection :
DRAIN
Voltage - Rated DC :
-500V
Width :
5.3 mm
Number of Channels :
1 Channel
Base Product Number :
IXTH8
JESD-30 Code :
R-PSFM-T3
Power Dissipation-Max (Abs) :
150 W
Rise Time :
27ns
Terminal Form :
THROUGH-HOLE
Continuous Drain Current (ID) :
8A
Minimum Operating Temperature :
- 55 C
Lead Free :
Lead Free
Brand :
IXYS
Transistor Element Material :
SILICON
Transistor Polarity :
P-Channel
Number of Terminations :
3
JESD-609 Code :
e1
Configuration :
Single
Gate to Source Voltage (Vgs) :
20V
Drain-source On Resistance-Max :
1.2 Ω
Fall Time (Typ) :
35 ns
Transistor Type :
1 P-Channel
RoHS :
Details
Gate Charge (Qg) (Max) @ Vgs :
130nC @ 10V
Number of Elements :
1
Supplier Device Package :
TO-247 (IXTH)
Rds On (Max) @ Id, Vgs :
1.2 Ω @ 4A, 10V
Terminal Position :
Single
DS Breakdown Voltage-Min :
500 V
JEDEC-95 Code :
TO-247AD
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Mounting Style :
Through Hole
Power Dissipation (Max) :
180W (Tc)
Datasheets
IXTH8P50
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTH8P50 from Chip IC,where excellence meets affordability. This product stands out with its Type:Standard Power MOSFET, Number of Pins:3, Package / Case:TO-247-3, Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, Number of Channels:1 Channel, Number of Terminations:3, IXTH8P50 pinout, IXTH8P50 datasheet PDF, IXTH8P50 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTH8P50 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTH8P50


P-Channel Tube 1.2 Ω @ 4A, 10V ±20V 3400pF @ 25V 130nC @ 10V 500V TO-247-3

IXTH8P50 Overview


A device's maximum input capacitance is 3400pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 8A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=-500V, and this device has a drain-to-source breakdown voltage of -500V voltage.Its drain current is 8A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 35 ns.Its maximum pulsed drain current is 32 A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.For normal operation, maintain the DS breakdown voltage above 500 V.To operate this transistor, you need to apply a 500V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

IXTH8P50 Features


a continuous drain current (ID) of 8A
a drain-to-source breakdown voltage of -500V voltage
the turn-off delay time is 35 ns
based on its rated peak drain current 32 A.
a 500V drain to source voltage (Vdss)


IXTH8P50 Applications


There are a lot of IXYS
IXTH8P50 applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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