IXTH8P50
- Mfr.Part #
- IXTH8P50
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET P-CH 500V 8A TO247
- Stock
- 10,752
- In Stock :
- 10,752
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Base Product Number :
- IXTH8
- FET Feature :
- --
- Element Configuration :
- Single
- Product Status :
- Active
- Pin Count :
- 3
- Package / Case :
- TO-247-3
- JESD-30 Code :
- R-PSFM-T3
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Power Dissipation :
- 180W
- Pbfree Code :
- yes
- Series :
- --
- Drain-source On Resistance-Max :
- 1.2 Ω
- Power Dissipation Ambient-Max :
- 180 W
- Operating Mode :
- ENHANCEMENT MODE
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Number of Pins :
- 3
- Rds On (Max) @ Id, Vgs :
- 1.2 Ω @ 4A, 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 130nC @ 10V
- Power Dissipation-Max (Abs) :
- 150 W
- Voltage - Rated DC :
- -500V
- Reach Compliance Code :
- Compliant
- Terminal Form :
- THROUGH-HOLE
- Transistor Polarity :
- P-Channel
- Vgs (Max) :
- ±20V
- Transistor Element Material :
- SILICON
- Packaging :
- Tube
- Mount :
- Through Hole
- Channel Mode :
- Enhancement
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- DS Breakdown Voltage-Min :
- 500 V
- JESD-609 Code :
- e1
- Maximum Operating Temperature :
- + 150 C
- Drain to Source Breakdown Voltage :
- -500V
- RoHS :
- Details
- Mounting Style :
- Through Hole
- Number of Channels :
- 1 Channel
- Case Connection :
- DRAIN
- Continuous Drain Current (ID) :
- 8A
- RoHS Status :
- ROHS3 Compliant
- Length :
- 16.26 mm
- Configuration :
- Single
- Factory Lead Time :
- 28 Weeks
- Turn-Off Delay Time :
- 35 ns
- Lead Free :
- Lead Free
- Height :
- 21.46 mm
- Number of Elements :
- 1
- Manufacturer :
- IXYS
- Drain to Source Voltage (Vdss) :
- 500V
- JEDEC-95 Code :
- TO-247AD
- Moisture Sensitivity Level (MSL) :
- Not Applicable
- Power Dissipation-Max :
- 180W Tc
- Package :
- Tube
- Surface Mount :
- No
- Type :
- Standard Power MOSFET
- Current - Continuous Drain (Id) @ 25°C :
- 8A Tc
- Product Type :
- MOSFET
- Product Category :
- MOSFET
- Operating Temperature :
- -55°C~150°C TJ
- Fall Time (Typ) :
- 35 ns
- Number of Terminations :
- 3
- Pulsed Drain Current-Max (IDM) :
- 32 A
- Drain Current-Max (Abs) (ID) :
- 8A
- Supplier Device Package :
- TO-247 (IXTH)
- Rise Time :
- 27ns
- Number of Terminals :
- 3
- Additional Feature :
- AVALANCHE RATED
- Current Rating :
- -8A
- Transistor Application :
- SWITCHING
- Brand :
- IXYS
- Package Shape :
- RECTANGULAR
- Polarity/Channel Type :
- P-Channel
- Mounting Type :
- Through Hole
- Qualification Status :
- Not Qualified
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Terminal Position :
- Single
- Gate to Source Voltage (Vgs) :
- 20V
- Input Capacitance (Ciss) (Max) @ Vds :
- 3400pF @ 25V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Width :
- 5.3 mm
- Power Dissipation (Max) :
- 180W (Tc)
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Resistance :
- 1.2Ohm
- Published :
- 2005
- Transistor Type :
- 1 P-Channel
- FET Type :
- P-Channel
- Minimum Operating Temperature :
- - 55 C
- Datasheets
- IXTH8P50
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P-Channel Tube 1.2 Ω @ 4A, 10V ±20V 3400pF @ 25V 130nC @ 10V 500V TO-247-3
IXTH8P50 Overview
A device's maximum input capacitance is 3400pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 8A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=-500V, and this device has a drain-to-source breakdown voltage of -500V voltage.Its drain current is 8A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 35 ns.Its maximum pulsed drain current is 32 A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.For normal operation, maintain the DS breakdown voltage above 500 V.To operate this transistor, you need to apply a 500V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IXTH8P50 Features
a continuous drain current (ID) of 8A
a drain-to-source breakdown voltage of -500V voltage
the turn-off delay time is 35 ns
based on its rated peak drain current 32 A.
a 500V drain to source voltage (Vdss)
IXTH8P50 Applications
There are a lot of IXYS
IXTH8P50 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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