IXTH88N30P

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Mfr.Part #
IXTH88N30P
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 300V 88A TO247
Stock
9,135
In Stock :
9,135

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Operating Mode :
ENHANCEMENT MODE
Drain to Source Resistance :
40 mΩ
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Max Power Dissipation :
600 W
Package Shape :
RECTANGULAR
ECCN Code :
EAR99
Fall Time (Typ) :
25 ns
JESD-609 Code :
e1
Product Category :
MOSFET
JEDEC-95 Code :
TO-247AD
RoHS Status :
ROHS3 Compliant
Configuration :
Single
Transistor Application :
SWITCHING
Manufacturer :
IXYS
Case Connection :
DRAIN
Turn-Off Delay Time :
96 ns
Operating Temperature :
-55°C~150°C TJ
Series :
PolarHT™
Avalanche Energy Rating (Eas) :
2000 mJ
Factory Lead Time :
35 Weeks
Drain-source On Resistance-Max :
0.04 Ω
Current - Continuous Drain (Id) @ 25°C :
88A Tc
Product Type :
MOSFET
Radiation Hardening :
No
Package / Case :
TO-247-3
Terminal Position :
Single
Element Configuration :
Single
Maximum Operating Temperature :
+ 150 C
Package :
Tube
Power Dissipation-Max :
600W Tc
Rise Time :
24ns
FET Feature :
--
Transistor Polarity :
N-Channel
Supplier Device Package :
TO-247 (IXTH)
Min Operating Temperature :
-55 °C
Drain to Source Voltage (Vdss) :
300V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Gate Charge (Qg) (Max) @ Vgs :
180nC @ 10V
Power Dissipation (Max) :
600W (Tc)
Qualification Status :
Not Qualified
Pin Count :
3
Channel Mode :
Enhancement
Packaging :
Tube
Transistor Element Material :
SILICON
Surface Mount :
No
Number of Terminations :
3
Mounting Type :
Through Hole
Minimum Operating Temperature :
- 55 C
RoHS :
Details
DS Breakdown Voltage-Min :
300 V
Subcategory :
MOSFETs
Product Status :
Active
Mount :
Through Hole
Rds On (Max) @ Id, Vgs :
40m Ω @ 44A, 10V
Number of Channels :
1 Channel
Polarity/Channel Type :
N-Channel
Additional Feature :
AVALANCHE RATED
Max Operating Temperature :
150 °C
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Terminal Form :
THROUGH-HOLE
Rds On Max :
40 mΩ
Pulsed Drain Current-Max (IDM) :
220A
FET Type :
N-Channel
Mounting Style :
Through Hole
Input Capacitance (Ciss) (Max) @ Vds :
6300pF @ 25V
Power Dissipation :
600W
Published :
2006
Base Product Number :
IXTH88
Vgs(th) (Max) @ Id :
5V @ 250μA
JESD-30 Code :
R-PSFM-T3
Drain to Source Breakdown Voltage :
300V
Gate to Source Voltage (Vgs) :
20V
Transistor Type :
1 N-Channel
Vgs (Max) :
±20V
Continuous Drain Current (ID) :
88A
Lead Free :
Lead Free
Resistance :
40mOhm
Number of Elements :
1
Number of Terminals :
3
Brand :
IXYS
Pbfree Code :
yes
Reach Compliance Code :
Compliant
Input Capacitance :
6.3 nF
Datasheets
IXTH88N30P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTH88N30P from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Package / Case:TO-247-3, Number of Terminations:3, Mounting Type:Through Hole, Number of Channels:1 Channel, IXTH88N30P pinout, IXTH88N30P datasheet PDF, IXTH88N30P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTH88N30P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTH88N30P


N-Channel Tube 40m Ω @ 44A, 10V ±20V 6300pF @ 25V 180nC @ 10V 300V TO-247-3

IXTH88N30P Overview


In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 2000 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 6300pF @ 25V.This device conducts a continuous drain current (ID) of 88A, which is the maximum continuous current transistor can conduct.Using VGS=300V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 300V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 96 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 220A.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 40 mΩ, which means the device is not biased.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.A normal operation of the DS requires keeping the breakdown voltage above 300 V.This transistor requires a drain-source voltage (Vdss) of 300V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

IXTH88N30P Features


the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 88A
a drain-to-source breakdown voltage of 300V voltage
the turn-off delay time is 96 ns
based on its rated peak drain current 220A.
single MOSFETs transistor is 40 mΩ
a 300V drain to source voltage (Vdss)


IXTH88N30P Applications


There are a lot of IXYS
IXTH88N30P applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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