IXTH88N30P
- Mfr.Part #
- IXTH88N30P
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 300V 88A TO247
- Stock
- 9,135
- In Stock :
- 9,135
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Mode :
- ENHANCEMENT MODE
- Drain to Source Resistance :
- 40 mΩ
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Max Power Dissipation :
- 600 W
- Package Shape :
- RECTANGULAR
- ECCN Code :
- EAR99
- Fall Time (Typ) :
- 25 ns
- JESD-609 Code :
- e1
- Product Category :
- MOSFET
- JEDEC-95 Code :
- TO-247AD
- RoHS Status :
- ROHS3 Compliant
- Configuration :
- Single
- Transistor Application :
- SWITCHING
- Manufacturer :
- IXYS
- Case Connection :
- DRAIN
- Turn-Off Delay Time :
- 96 ns
- Operating Temperature :
- -55°C~150°C TJ
- Series :
- PolarHT™
- Avalanche Energy Rating (Eas) :
- 2000 mJ
- Factory Lead Time :
- 35 Weeks
- Drain-source On Resistance-Max :
- 0.04 Ω
- Current - Continuous Drain (Id) @ 25°C :
- 88A Tc
- Product Type :
- MOSFET
- Radiation Hardening :
- No
- Package / Case :
- TO-247-3
- Terminal Position :
- Single
- Element Configuration :
- Single
- Maximum Operating Temperature :
- + 150 C
- Package :
- Tube
- Power Dissipation-Max :
- 600W Tc
- Rise Time :
- 24ns
- FET Feature :
- --
- Transistor Polarity :
- N-Channel
- Supplier Device Package :
- TO-247 (IXTH)
- Min Operating Temperature :
- -55 °C
- Drain to Source Voltage (Vdss) :
- 300V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate Charge (Qg) (Max) @ Vgs :
- 180nC @ 10V
- Power Dissipation (Max) :
- 600W (Tc)
- Qualification Status :
- Not Qualified
- Pin Count :
- 3
- Channel Mode :
- Enhancement
- Packaging :
- Tube
- Transistor Element Material :
- SILICON
- Surface Mount :
- No
- Number of Terminations :
- 3
- Mounting Type :
- Through Hole
- Minimum Operating Temperature :
- - 55 C
- RoHS :
- Details
- DS Breakdown Voltage-Min :
- 300 V
- Subcategory :
- MOSFETs
- Product Status :
- Active
- Mount :
- Through Hole
- Rds On (Max) @ Id, Vgs :
- 40m Ω @ 44A, 10V
- Number of Channels :
- 1 Channel
- Polarity/Channel Type :
- N-Channel
- Additional Feature :
- AVALANCHE RATED
- Max Operating Temperature :
- 150 °C
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Terminal Form :
- THROUGH-HOLE
- Rds On Max :
- 40 mΩ
- Pulsed Drain Current-Max (IDM) :
- 220A
- FET Type :
- N-Channel
- Mounting Style :
- Through Hole
- Input Capacitance (Ciss) (Max) @ Vds :
- 6300pF @ 25V
- Power Dissipation :
- 600W
- Published :
- 2006
- Base Product Number :
- IXTH88
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- JESD-30 Code :
- R-PSFM-T3
- Drain to Source Breakdown Voltage :
- 300V
- Gate to Source Voltage (Vgs) :
- 20V
- Transistor Type :
- 1 N-Channel
- Vgs (Max) :
- ±20V
- Continuous Drain Current (ID) :
- 88A
- Lead Free :
- Lead Free
- Resistance :
- 40mOhm
- Number of Elements :
- 1
- Number of Terminals :
- 3
- Brand :
- IXYS
- Pbfree Code :
- yes
- Reach Compliance Code :
- Compliant
- Input Capacitance :
- 6.3 nF
- Datasheets
- IXTH88N30P
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N-Channel Tube 40m Ω @ 44A, 10V ±20V 6300pF @ 25V 180nC @ 10V 300V TO-247-3
IXTH88N30P Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 2000 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 6300pF @ 25V.This device conducts a continuous drain current (ID) of 88A, which is the maximum continuous current transistor can conduct.Using VGS=300V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 300V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 96 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 220A.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 40 mΩ, which means the device is not biased.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.A normal operation of the DS requires keeping the breakdown voltage above 300 V.This transistor requires a drain-source voltage (Vdss) of 300V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IXTH88N30P Features
the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 88A
a drain-to-source breakdown voltage of 300V voltage
the turn-off delay time is 96 ns
based on its rated peak drain current 220A.
single MOSFETs transistor is 40 mΩ
a 300V drain to source voltage (Vdss)
IXTH88N30P Applications
There are a lot of IXYS
IXTH88N30P applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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