IXTH88N15
- Mfr.Part #
- IXTH88N15
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 150V 88A TO247
- Stock
- 53,488
- In Stock :
- 53,488
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- JESD-30 Code :
- R-PSFM-T3
- Polarity/Channel Type :
- N-Channel
- Transistor Application :
- SWITCHING
- Series :
- --
- Minimum Operating Temperature :
- - 55 C
- Product Category :
- MOSFET
- Pbfree Code :
- yes
- Published :
- 2003
- Avalanche Energy Rating (Eas) :
- 1500 mJ
- Current - Continuous Drain (Id) @ 25°C :
- 88A Tc
- RoHS :
- Details
- Input Capacitance (Ciss) (Max) @ Vds :
- 4000pF @ 25V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Mounting Type :
- Through Hole
- Product Type :
- MOSFET
- DS Breakdown Voltage-Min :
- 150 V
- Continuous Drain Current (ID) :
- 88A
- FET Type :
- N-Channel
- Vgs (Max) :
- ±20V
- Terminal Form :
- THROUGH-HOLE
- Height :
- 21.46 mm
- Rise Time :
- 33ns
- Transistor Type :
- 1 P-Channel
- Mounting Style :
- Through Hole
- Fall Time (Typ) :
- 18 ns
- Power Dissipation-Max :
- 400W Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 170nC @ 10V
- Rds On (Max) @ Id, Vgs :
- 22m Ω @ 44A, 10V
- Brand :
- IXYS
- Element Configuration :
- Single
- Turn-Off Delay Time :
- 80 ns
- Terminal Position :
- Single
- Transistor Element Material :
- SILICON
- Power Dissipation :
- 400W
- Reach Compliance Code :
- Compliant
- Number of Channels :
- 1 Channel
- Base Product Number :
- IXTH88
- Qualification Status :
- Not Qualified
- Mount :
- Through Hole
- Package :
- Box
- Number of Pins :
- 3
- Packaging :
- Tube
- Gate to Source Voltage (Vgs) :
- 20V
- Case Connection :
- DRAIN
- FET Feature :
- --
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Number of Elements :
- 1
- Package / Case :
- TO-247-3
- Channel Mode :
- Enhancement
- Supplier Device Package :
- TO-247 (IXTH)
- Number of Terminals :
- 3
- Maximum Operating Temperature :
- + 150 C
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Subcategory :
- MOSFETs
- Operating Temperature :
- -55°C~150°C TJ
- Drain to Source Breakdown Voltage :
- 150V
- Transistor Polarity :
- N-Channel
- ECCN Code :
- EAR99
- Package Shape :
- RECTANGULAR
- Pin Count :
- 3
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Operating Mode :
- ENHANCEMENT MODE
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- RoHS Status :
- RoHS Compliant
- Configuration :
- Single
- JEDEC-95 Code :
- TO-247AD
- Drain to Source Voltage (Vdss) :
- 150V
- Drain-source On Resistance-Max :
- 0.022Ohm
- Manufacturer :
- IXYS
- Power Dissipation (Max) :
- 400W (Tc)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pulsed Drain Current-Max (IDM) :
- 352 A
- Product Status :
- Obsolete
- Surface Mount :
- No
- Length :
- 16.26 mm
- Width :
- 5.3 mm
- Number of Terminations :
- 3
- Datasheets
- IXTH88N15
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N-Channel Tube 22m Ω @ 44A, 10V ±20V 4000pF @ 25V 170nC @ 10V 150V TO-247-3
IXTH88N15 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 1500 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 4000pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 150V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 150V.As a result of its turn-off delay time, which is 80 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 352 A, its maximum pulsed drain current.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In order for DS breakdown voltage to remain above 150 V, it should remain above the 150 V level.The transistor must receive a 150V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IXTH88N15 Features
the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 88A
a drain-to-source breakdown voltage of 150V voltage
the turn-off delay time is 80 ns
based on its rated peak drain current 352 A.
a 150V drain to source voltage (Vdss)
IXTH88N15 Applications
There are a lot of IXYS
IXTH88N15 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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