IXTH86N25T
- Mfr.Part #
- IXTH86N25T
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 250V 86A TO247
- Stock
- 9,490
- In Stock :
- 9,490
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Qualification Status :
- Not Qualified
- Vgs (Max) :
- ±30V
- FET Type :
- N-Channel
- Rise Time :
- 28 ns
- DS Breakdown Voltage-Min :
- 250V
- Product Status :
- Active
- Reach Compliance Code :
- Compliant
- Mounting Type :
- Through Hole
- Pin Count :
- 3
- Packaging :
- Tube
- Terminal Form :
- THROUGH-HOLE
- Gate Charge (Qg) (Max) @ Vgs :
- 105nC @ 10V
- Pulsed Drain Current-Max (IDM) :
- 190A
- Subcategory :
- MOSFETs
- JESD-609 Code :
- e1
- Number of Terminals :
- 3
- Maximum Operating Temperature :
- + 150 C
- Power Dissipation-Max :
- 540W Ta
- Terminal Position :
- Single
- Package :
- Tube
- Additional Feature :
- AVALANCHE RATED
- Product Type :
- MOSFET
- Drain-source On Resistance-Max :
- 0.037Ohm
- RoHS :
- Details
- JEDEC-95 Code :
- TO-247AD
- Transistor Element Material :
- SILICON
- Pbfree Code :
- yes
- ECCN Code :
- EAR99
- Factory Lead Time :
- 30 Weeks
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Mounting Style :
- Through Hole
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Power Dissipation (Max) :
- 540W (Ta)
- Package Shape :
- RECTANGULAR
- Operating Temperature :
- -55°C~150°C TJ
- Polarity/Channel Type :
- N-Channel
- Vgs(th) (Max) @ Id :
- 5V @ 1mA
- Brand :
- IXYS
- Drain Current-Max (Abs) (ID) :
- 86A
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Avalanche Energy Rating (Eas) :
- 1500 mJ
- Published :
- 2012
- Product :
- Power MOSFET Modules
- Number of Terminations :
- 3
- RoHS Status :
- RoHS Compliant
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Rds On (Max) @ Id, Vgs :
- 37m Ω @ 43A, 10V
- Current - Continuous Drain (Id) @ 25°C :
- 86A Tc
- Minimum Operating Temperature :
- - 55 C
- Drain to Source Voltage (Vdss) :
- 250V
- Surface Mount :
- No
- Product Category :
- MOSFET
- Type :
- Trench Gate
- Operating Mode :
- ENHANCEMENT MODE
- Case Connection :
- DRAIN
- Input Capacitance (Ciss) (Max) @ Vds :
- 5330pF @ 25V
- Manufacturer :
- IXYS
- Package / Case :
- TO-247-3
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- JESD-30 Code :
- R-PSFM-T3
- Number of Elements :
- 1
- Transistor Polarity :
- N-Channel
- FET Feature :
- -
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Supplier Device Package :
- TO-247 (IXTH)
- Series :
- Trench
- Transistor Application :
- SWITCHING
- Tradename :
- HiPerFET
- Base Product Number :
- IXTH86
- Datasheets
- IXTH86N25T
N-Channel Tube 37m Ω @ 43A, 10V ±30V 5330pF @ 25V 105nC @ 10V 250V TO-247-3
IXTH86N25T Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 1500 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 5330pF @ 25V maximal input capacitance.A device can conduct a maximum continuous current of [86A] according to its drain current.As far as peak drain current is concerned, its maximum pulsed current is 190A.The DS breakdown voltage should be maintained above 250V to maintain normal operation.To operate this transistor, you will need a 250V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
IXTH86N25T Features
the avalanche energy rating (Eas) is 1500 mJ
based on its rated peak drain current 190A.
a 250V drain to source voltage (Vdss)
IXTH86N25T Applications
There are a lot of IXYS
IXTH86N25T applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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