IXTH86N25T

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

540W Ta

Rds On (Max) @ Id, Vgs :

37m Ω @ 43A, 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Temperature :

-55°C~150°C TJ

Product :

Power MOSFET Modules

Operating Mode :

ENHANCEMENT MODE

RoHS :

Details

Rise Time :

28 ns

Number of Elements :

1

Drain to Source Voltage (Vdss) :

250V

FET Type :

N-Channel

Drain Current-Max (Abs) (ID) :

86A

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Base Product Number :

IXTH86

ECCN Code :

EAR99

Number of Terminals :

3

JEDEC-95 Code :

TO-247AD

Vgs(th) (Max) @ Id :

5V @ 1mA

RoHS Status :

RoHS Compliant

Polarity/Channel Type :

N-Channel

Power Dissipation (Max) :

540W (Ta)

Minimum Operating Temperature :

- 55 C

Subcategory :

MOSFETs

Manufacturer :

IXYS

Surface Mount :

No

Avalanche Energy Rating (Eas) :

1500 mJ

Published :

2012

Product Type :

MOSFET

Packaging :

Tube

JESD-609 Code :

e1

Qualification Status :

Not Qualified

Configuration :

SINGLE WITH BUILT-IN DIODE

Tradename :

HiPerFET

Current - Continuous Drain (Id) @ 25°C :

86A Tc

Product Category :

MOSFET

FET Feature :

-

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Maximum Operating Temperature :

+ 150 C

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Form :

THROUGH-HOLE

Pin Count :

3

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Transistor Application :

SWITCHING

Additional Feature :

AVALANCHE RATED

Transistor Polarity :

N-Channel

Terminal Position :

Single

Product Status :

Active

Reach Compliance Code :

Compliant

Pbfree Code :

yes

Gate Charge (Qg) (Max) @ Vgs :

105nC @ 10V

Case Connection :

DRAIN

Number of Terminations :

3

Brand :

IXYS

Input Capacitance (Ciss) (Max) @ Vds :

5330pF @ 25V

Vgs (Max) :

±30V

Package :

Tube

Package / Case :

TO-247-3

Factory Lead Time :

30 Weeks

Package Shape :

RECTANGULAR

JESD-30 Code :

R-PSFM-T3

Mounting Type :

Through Hole

DS Breakdown Voltage-Min :

250V

Type :

Trench Gate

Transistor Element Material :

SILICON

Supplier Device Package :

TO-247 (IXTH)

Mounting Style :

Through Hole

Drain-source On Resistance-Max :

0.037Ohm

Series :

Trench

Pulsed Drain Current-Max (IDM) :

190A