IXTH80N65X2
- Mfr.Part #
- IXTH80N65X2
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 80A TO247
- Stock
- 26,387
- In Stock :
- 26,387
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- ECCN Code :
- EAR99
- Input Capacitance (Ciss) (Max) @ Vds :
- 7753pF @ 25V
- Factory Lead Time :
- 15 Weeks
- Number of Elements per Chip :
- 1
- Package :
- Tube
- Turn-Off Delay Time :
- 72 ns
- Rds On (Max) @ Id, Vgs :
- 40m Ω @ 40A, 10V
- Manufacturer Package Identifier :
- IXTH80N65X2
- Published :
- 2015
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Power Dissipation-Max :
- 890W Tc
- Pin Count :
- 3
- Series :
- --
- Drain to Source Voltage (Vdss) :
- 650V
- Current - Continuous Drain (Id) @ 25°C :
- 80A Tc
- Product Type :
- MOSFET
- Power Dissipation :
- 890W
- Drain to Source Breakdown Voltage :
- 650V
- Vgs (Max) :
- ±30V
- Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Brand :
- IXYS
- Height :
- 25.66mm
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Tradename :
- HiPerFET
- Power Dissipation (Max) :
- 890W (Tc)
- Maximum Operating Temperature :
- +150 °C
- Width :
- 21.34mm
- Rise Time :
- 11 ns
- Number of Channels :
- 1
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Packaging :
- Tube
- RoHS :
- Details
- Continuous Drain Current (ID) :
- 80A
- Channel Type :
- N
- Mount :
- Through Hole
- Operating Temperature :
- -55°C~150°C TJ
- Max Junction Temperature (Tj) :
- 150°C
- Length :
- 16.13mm
- Mounting Type :
- Through Hole
- Transistor Polarity :
- N-Channel
- Product Status :
- Active
- Gate to Source Voltage (Vgs) :
- 30V
- Supplier Device Package :
- TO-247
- Minimum Operating Temperature :
- -55 °C
- Reach Compliance Code :
- not_compliant
- FET Feature :
- --
- Product Category :
- MOSFET
- Vgs(th) (Max) @ Id :
- 4.5V @ 4mA
- Package Type :
- TO-247
- Transistor Type :
- 1 N-Channel
- RoHS Status :
- ROHS3 Compliant
- Channel Mode :
- Enhancement
- Base Product Number :
- IXTH80
- Turn On Delay Time :
- 36 ns
- Mounting Style :
- Through Hole
- Gate Charge (Qg) (Max) @ Vgs :
- 144nC @ 10V
- Subcategory :
- MOSFETs
- FET Type :
- N-Channel
- Manufacturer :
- IXYS
- Package / Case :
- TO-247-3
- Datasheets
- IXTH80N65X2
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N-Channel Tube 40m Ω @ 40A, 10V ±30V 7753pF @ 25V 144nC @ 10V 650V TO-247-3
IXTH80N65X2 Overview
The maximum input capacitance of this device is 7753pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 80A.When VGS=650V, and ID flows to VDS at 650VVDS, the drain-source breakdown voltage is 650V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 72 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 36 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.The drain-to-source voltage (Vdss) of this transistor needs to be at 650V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IXTH80N65X2 Features
a continuous drain current (ID) of 80A
a drain-to-source breakdown voltage of 650V voltage
the turn-off delay time is 72 ns
a 650V drain to source voltage (Vdss)
IXTH80N65X2 Applications
There are a lot of IXYS
IXTH80N65X2 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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