IXTH80N20L
- Mfr.Part #
- IXTH80N20L
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 80A TO247
- Stock
- 3,199
- In Stock :
- 3,199
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Avalanche Energy Rating (Eas) :
- 2500 mJ
- Power Dissipation-Max :
- 520W Tc
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Maximum Operating Temperature :
- + 150 C
- Packaging :
- Tube
- FET Feature :
- --
- FET Type :
- N-Channel
- Package / Case :
- TO-247-3
- Mounting Type :
- Through Hole
- Vgs (Max) :
- ±20V
- ECCN Code :
- EAR99
- Drain to Source Voltage (Vdss) :
- 200V
- Package :
- Tube
- Mount :
- Through Hole
- Qualification Status :
- Not Qualified
- Channel Mode :
- Enhancement
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Continuous Drain Current (ID) :
- 80A
- Minimum Operating Temperature :
- - 55 C
- Power Dissipation (Max) :
- 520W (Tc)
- Series :
- Linear™
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pin Count :
- 3
- Product Type :
- MOSFET
- Transistor Application :
- SWITCHING
- RoHS :
- Details
- Number of Channels :
- 1 Channel
- Factory Lead Time :
- 17 Weeks
- Product Category :
- MOSFET
- Lead Free :
- Lead Free
- Supplier Device Package :
- TO-247 (IXTH)
- Number of Terminations :
- 3
- Terminal Position :
- Single
- Brand :
- IXYS
- Mounting Style :
- Through Hole
- RoHS Status :
- ROHS3 Compliant
- Rise Time :
- 44 ns
- Rds On (Max) @ Id, Vgs :
- 32m Ω @ 40A, 10V
- Published :
- 2010
- Product Status :
- Active
- Operating Mode :
- ENHANCEMENT MODE
- DS Breakdown Voltage-Min :
- 200V
- Additional Feature :
- AVALANCHE RATED
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Polarity :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 180nC @ 10V
- Base Product Number :
- IXTH80
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Case Connection :
- DRAIN
- Input Capacitance (Ciss) (Max) @ Vds :
- 6160pF @ 25V
- Manufacturer :
- IXYS
- Number of Pins :
- 3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Current - Continuous Drain (Id) @ 25°C :
- 80A Tc
- Reach Compliance Code :
- Unknown
- Datasheets
- IXTH80N20L
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N-Channel Tube 32m Ω @ 40A, 10V ±20V 6160pF @ 25V 180nC @ 10V 200V TO-247-3
IXTH80N20L Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 2500 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 6160pF @ 25V.This device conducts a continuous drain current (ID) of 80A, which is the maximum continuous current transistor can conduct.A normal operation of the DS requires keeping the breakdown voltage above 200V.This transistor requires a drain-source voltage (Vdss) of 200V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IXTH80N20L Features
the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 80A
a 200V drain to source voltage (Vdss)
IXTH80N20L Applications
There are a lot of IXYS
IXTH80N20L applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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