IXTH76P10T

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Through Hole

Number of Terminals :

3

Case Connection :

DRAIN

Drain Current-Max (Abs) (ID) :

76 A

Avalanche Energy Rating (Eas) :

1000 mJ

Pin Count :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rds On Max :

25 mΩ

Width :

5.3 mm

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

RoHS Status :

ROHS3 Compliant

Rise Time :

40 ns

Supplier Device Package :

TO-247 (IXTH)

Number of Terminations :

3

Package / Case :

TO-247-3

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

76A

Series :

TrenchP™

Package Shape :

RECTANGULAR

Number of Elements :

1

Transistor Polarity :

P-Channel

Drain-source On Resistance-Max :

0.024Ohm

Factory Lead Time :

17 Weeks

Power Dissipation-Max :

298W Tc

Product Status :

Active

Polarity/Channel Type :

P-Channel

Input Capacitance (Ciss) (Max) @ Vds :

13700pF @ 25V

Vgs (Max) :

±15V

Minimum Operating Temperature :

- 55 C

Terminal Form :

THROUGH-HOLE

Product Category :

MOSFET

RoHS :

Compliant

Vgs(th) (Max) @ Id :

4V @ 250µA

Surface Mount :

No

FET Type :

P-Channel

Gate to Source Voltage (Vgs) :

15V

Current - Continuous Drain (Id) @ 25°C :

76A Tc

Packaging :

Tube

ECCN Code :

EAR99

Type :

TrenchP Power MOSFET

Configuration :

SINGLE WITH BUILT-IN DIODE

Brand :

IXYS

Power Dissipation-Max (Abs) :

298 W

Published :

2010

Power Dissipation :

298W

Min Operating Temperature :

-55 °C

Max Operating Temperature :

150 °C

Base Product Number :

IXTH76

Package :

Tube

Additional Feature :

AVALANCHE RATED

Rds On (Max) @ Id, Vgs :

25m Ω @ 500mA, 10V

Mounting Style :

Through Hole

Manufacturer :

IXYS

Transistor Element Material :

SILICON

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Channel Mode :

Enhancement

JEDEC-95 Code :

TO-247

Maximum Operating Temperature :

+ 150 C

Operating Temperature :

-55°C~150°C TJ

Operating Mode :

ENHANCEMENT MODE

Tradename :

TrenchP

Mounting Type :

Through Hole

JESD-609 Code :

e1

Pulsed Drain Current-Max (IDM) :

230A

Height :

21.46 mm

Max Power Dissipation :

298 W

DS Breakdown Voltage-Min :

100 V

Input Capacitance :

13.7 nF

Reach Compliance Code :

Unknown

Terminal Position :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

100V

Gate Charge (Qg) (Max) @ Vgs :

197nC @ 10V

Power Dissipation (Max) :

298W (Tc)

Length :

16.26 mm

Product Type :

MOSFET

Radiation Hardening :

No

Pbfree Code :

yes

JESD-30 Code :

R-PSFM-T3

FET Feature :

--

Number of Channels :

1 Channel