IXTH76N25T

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminals :

3

RoHS :

Compliant

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Max Operating Temperature :

150 °C

Mounting Style :

Through Hole

DS Breakdown Voltage-Min :

250 V

Manufacturer :

IXYS

Series :

--

RoHS Status :

ROHS3 Compliant

Package Shape :

RECTANGULAR

Mount :

Through Hole

Pbfree Code :

yes

Configuration :

Single

Package / Case :

TO-247-3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2007

Pulsed Drain Current-Max (IDM) :

170 A

Continuous Drain Current (ID) :

76A

ECCN Code :

EAR99

Polarity/Channel Type :

N-Channel

Transistor Element Material :

SILICON

Drain Current-Max (Abs) (ID) :

76 A

Transistor Application :

SWITCHING

Supplier Device Package :

TO-247 (IXTH)

Reach Compliance Code :

Compliant

JESD-30 Code :

R-PSFM-T3

Transistor Type :

1 N-Channel

Rise Time :

25ns

Minimum Operating Temperature :

- 55 C

Package :

Tube

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

39m Ω @ 500mA, 10V

Pin Count :

3

Vgs (Max) :

±30V

Tradename :

HiPerFET

JESD-609 Code :

e1

Gate Charge (Qg) (Max) @ Vgs :

92nC @ 10V

Channel Mode :

Enhancement

Factory Lead Time :

30 Weeks

Drain to Source Breakdown Voltage :

250V

Fall Time (Typ) :

29 ns

Power Dissipation-Max (Abs) :

460 W

Max Power Dissipation :

460 W

JEDEC-95 Code :

TO-247AD

Min Operating Temperature :

-55 °C

Operating Mode :

ENHANCEMENT MODE

Product Type :

MOSFET

Radiation Hardening :

No

Drain to Source Voltage (Vdss) :

250V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Lead Free :

Lead Free

Packaging :

Tube

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Power Dissipation (Max) :

460W (Tc)

Vgs(th) (Max) @ Id :

5V @ 1mA

Mounting Type :

Through Hole

Turn-Off Delay Time :

56 ns

Case Connection :

DRAIN

Drive Voltage (Max Rds On,Min Rds On) :

10V

Brand :

IXYS

Terminal Position :

Single

Additional Feature :

AVALANCHE RATED

Drain-source On Resistance-Max :

0.039Ohm

FET Feature :

--

Rds On Max :

39 mΩ

Input Capacitance (Ciss) (Max) @ Vds :

4500pF @ 25V

Gate to Source Voltage (Vgs) :

30V

Input Capacitance :

4.5 nF

Surface Mount :

No

Current - Continuous Drain (Id) @ 25°C :

76A Tc

Maximum Operating Temperature :

+ 150 C

Product Status :

Active

Transistor Polarity :

N-Channel

Product Category :

MOSFET

Operating Temperature :

-55°C~150°C TJ

Element Configuration :

Single

Power Dissipation :

460W

Number of Terminations :

3

Terminal Form :

THROUGH-HOLE

FET Type :

N-Channel

Base Product Number :

IXTH76

Number of Channels :

1 Channel

Qualification Status :

Not Qualified

Power Dissipation-Max :

460W Tc

Avalanche Energy Rating (Eas) :

1500 mJ

Drain to Source Resistance :

39 mΩ