IXTH75N15

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Case Connection :

DRAIN

Pin Count :

3

Channel Mode :

Enhancement

Polarity/Channel Type :

N-Channel

Transistor Application :

SWITCHING

Manufacturer :

IXYS

Product Category :

MOSFET

Drain-source On Resistance-Max :

0.023Ohm

Package Shape :

RECTANGULAR

Number of Terminals :

3

Drain to Source Breakdown Voltage :

150V

Transistor Polarity :

N-Channel

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Supplier Device Package :

TO-247 (IXTH)

Package / Case :

TO-247-3

Pulsed Drain Current-Max (IDM) :

300A

Mount :

Through Hole

Length :

16.26 mm

Operating Temperature :

-55°C~150°C TJ

DS Breakdown Voltage-Min :

150 V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Qualification Status :

Not Qualified

JEDEC-95 Code :

TO-247AD

Drain to Source Voltage (Vdss) :

150V

Mounting Style :

Through Hole

Product Type :

MOSFET

Input Capacitance (Ciss) (Max) @ Vds :

5400pF @ 25V

Gate to Source Voltage (Vgs) :

20V

Terminal Position :

Single

Series :

--

JESD-30 Code :

R-PSFM-T3

Width :

5.3 mm

Subcategory :

MOSFETs

Package :

Tube

Reach Compliance Code :

Compliant

Published :

2004

Avalanche Energy Rating (Eas) :

1500 mJ

Gate Charge (Qg) (Max) @ Vgs :

210nC @ 10V

Brand :

IXYS

Power Dissipation (Max) :

330W (Tc)

Vgs (Max) :

±20V

Surface Mount :

No

RoHS :

Details

RoHS Status :

ROHS3 Compliant

Minimum Operating Temperature :

- 55 C

Packaging :

Tube

Number of Terminations :

3

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

23m Ω @ 500mA, 10V

Power Dissipation :

330W

Vgs(th) (Max) @ Id :

4V @ 250µA

Product Status :

Active

Mounting Type :

Through Hole

Transistor Type :

1 N-Channel

Number of Elements :

1

Height :

21.46 mm

Maximum Operating Temperature :

+ 150 C

Pbfree Code :

yes

Rise Time :

33ns

Turn-Off Delay Time :

70 ns

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Base Product Number :

IXTH75

Number of Channels :

1 Channel

Continuous Drain Current (ID) :

75A

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Feature :

--

Fall Time (Typ) :

17 ns

Terminal Form :

THROUGH-HOLE

Power Dissipation-Max :

330W Tc

FET Type :

N-Channel

Configuration :

Single