IXTH75N10L2

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Mfr.Part #
IXTH75N10L2
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 100V 75A TO247
Stock
1
In Stock :
1

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
FET Feature :
--
FET Type :
N-Channel
Continuous Drain Current (ID) :
75A
Configuration :
Single
Drive Voltage (Max Rds On,Min Rds On) :
10V
Power Dissipation (Max) :
400W (Tc)
Current - Continuous Drain (Id) @ 25°C :
75A Tc
Packaging :
Tube
Transistor Element Material :
SILICON
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Base Product Number :
IXTH75
Rds On (Max) @ Id, Vgs :
21m Ω @ 500mA, 10V
Reach Compliance Code :
Unknown
Element Configuration :
Single
Transistor Polarity :
N-Channel
RoHS :
Details
Gate to Source Voltage (Vgs) :
20V
Power Dissipation-Max :
400W Tc
Mount :
Through Hole
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Published :
2009
Drain-source On Resistance-Max :
0.021Ohm
Input Capacitance (Ciss) (Max) @ Vds :
8100pF @ 25V
Package / Case :
TO-247-3
Pulsed Drain Current-Max (IDM) :
225A
Operating Temperature :
-55°C~150°C TJ
Pin Count :
3
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Manufacturer :
IXYS
Power Dissipation :
400W
Additional Feature :
AVALANCHE RATED
Operating Mode :
ENHANCEMENT MODE
Package :
Tube
Vgs (Max) :
±20V
Channel Mode :
Enhancement
Number of Elements :
1
Drain to Source Voltage (Vdss) :
100V
Supplier Device Package :
TO-247 (IXTH)
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
ECCN Code :
EAR99
Mounting Type :
Through Hole
Product Category :
MOSFET
Series :
Linear L2™
Brand :
IXYS
Product Status :
Active
Gate Charge (Qg) (Max) @ Vgs :
215nC @ 10V
Vgs(th) (Max) @ Id :
4.5V @ 250μA
Product Type :
MOSFET
RoHS Status :
ROHS3 Compliant
Lead Free :
Lead Free
Drain to Source Breakdown Voltage :
100V
JESD-30 Code :
R-PSFM-T3
Mounting Style :
Through Hole
Maximum Operating Temperature :
+ 150 C
Case Connection :
DRAIN
Qualification Status :
Not Qualified
Number of Terminations :
3
JESD-609 Code :
e1
Transistor Type :
1 N-Channel
Pbfree Code :
yes
Transistor Application :
AMPLIFIER
Factory Lead Time :
28 Weeks
Avalanche Energy Rating (Eas) :
2500 mJ
Minimum Operating Temperature :
- 55 C
Number of Channels :
1 Channel
Datasheets
IXTH75N10L2
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTH75N10L2 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-247-3, Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Number of Terminations:3, Number of Channels:1 Channel, IXTH75N10L2 pinout, IXTH75N10L2 datasheet PDF, IXTH75N10L2 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTH75N10L2 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTH75N10L2


N-Channel Tube 21m Ω @ 500mA, 10V ±20V 8100pF @ 25V 215nC @ 10V 100V TO-247-3

IXTH75N10L2 Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 2500 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 8100pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 75A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=100V. And this device has 100V drain to source breakdown voltage.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 225A.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Operating this transistor requires a 100V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

IXTH75N10L2 Features


the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 75A
a drain-to-source breakdown voltage of 100V voltage
based on its rated peak drain current 225A.
a 100V drain to source voltage (Vdss)


IXTH75N10L2 Applications


There are a lot of IXYS
IXTH75N10L2 applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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