IXTH75N10L2
- Mfr.Part #
- IXTH75N10L2
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 75A TO247
- Stock
- 1
- In Stock :
- 1
Request A Quote(RFQ)
- * Fullname:
- * Company:
- * E-Mail:
- Phone:
- Comment:
- * Quantity:
- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- FET Feature :
- --
- FET Type :
- N-Channel
- Continuous Drain Current (ID) :
- 75A
- Configuration :
- Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Power Dissipation (Max) :
- 400W (Tc)
- Current - Continuous Drain (Id) @ 25°C :
- 75A Tc
- Packaging :
- Tube
- Transistor Element Material :
- SILICON
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Base Product Number :
- IXTH75
- Rds On (Max) @ Id, Vgs :
- 21m Ω @ 500mA, 10V
- Reach Compliance Code :
- Unknown
- Element Configuration :
- Single
- Transistor Polarity :
- N-Channel
- RoHS :
- Details
- Gate to Source Voltage (Vgs) :
- 20V
- Power Dissipation-Max :
- 400W Tc
- Mount :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2009
- Drain-source On Resistance-Max :
- 0.021Ohm
- Input Capacitance (Ciss) (Max) @ Vds :
- 8100pF @ 25V
- Package / Case :
- TO-247-3
- Pulsed Drain Current-Max (IDM) :
- 225A
- Operating Temperature :
- -55°C~150°C TJ
- Pin Count :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Manufacturer :
- IXYS
- Power Dissipation :
- 400W
- Additional Feature :
- AVALANCHE RATED
- Operating Mode :
- ENHANCEMENT MODE
- Package :
- Tube
- Vgs (Max) :
- ±20V
- Channel Mode :
- Enhancement
- Number of Elements :
- 1
- Drain to Source Voltage (Vdss) :
- 100V
- Supplier Device Package :
- TO-247 (IXTH)
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- ECCN Code :
- EAR99
- Mounting Type :
- Through Hole
- Product Category :
- MOSFET
- Series :
- Linear L2™
- Brand :
- IXYS
- Product Status :
- Active
- Gate Charge (Qg) (Max) @ Vgs :
- 215nC @ 10V
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Product Type :
- MOSFET
- RoHS Status :
- ROHS3 Compliant
- Lead Free :
- Lead Free
- Drain to Source Breakdown Voltage :
- 100V
- JESD-30 Code :
- R-PSFM-T3
- Mounting Style :
- Through Hole
- Maximum Operating Temperature :
- + 150 C
- Case Connection :
- DRAIN
- Qualification Status :
- Not Qualified
- Number of Terminations :
- 3
- JESD-609 Code :
- e1
- Transistor Type :
- 1 N-Channel
- Pbfree Code :
- yes
- Transistor Application :
- AMPLIFIER
- Factory Lead Time :
- 28 Weeks
- Avalanche Energy Rating (Eas) :
- 2500 mJ
- Minimum Operating Temperature :
- - 55 C
- Number of Channels :
- 1 Channel
- Datasheets
- IXTH75N10L2
.jpg)
N-Channel Tube 21m Ω @ 500mA, 10V ±20V 8100pF @ 25V 215nC @ 10V 100V TO-247-3
IXTH75N10L2 Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 2500 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 8100pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 75A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=100V. And this device has 100V drain to source breakdown voltage.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 225A.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Operating this transistor requires a 100V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IXTH75N10L2 Features
the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 75A
a drain-to-source breakdown voltage of 100V voltage
based on its rated peak drain current 225A.
a 100V drain to source voltage (Vdss)
IXTH75N10L2 Applications
There are a lot of IXYS
IXTH75N10L2 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
You may place an order without registering to Chip IC. We strongly recommend that you log in before purchasing as you can track your order at any time.
RFQ (Request for Quotations)It is recommended to send RFQ to get the latest prices and stock availability about the part.Our sales will reply to your inquiry within 24 hours.
Payment MethodFor your convenience, we accept multiple payment methods in USD, Such as:PayPal, Credit Card, and wire transfer.
IMPORTANT NOTICEYou may place an order without registering to 1. You'll receive an order confirmations by e-mail soon . (Please remember to check the spam box if you didn't hear from us). 2. Since stock availability and prices may change at any time, the sales will reconfirm the order details and update you at soonest time.
Most of our products are shipped via FEDEX,DHL,UPS and SF EXPRESS...
Shipping CostShipping Cost starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).If customer have shipping account, we can make shipment under customer’s shipping account with freight collect directly.
The basic freight (for package ≤0.5 KG ) depends on the time zones and countries
Once the goods are shipped, estimated delivery time depends on the shipping methods you chose. You can track it by the tracking no.
















