IXTH75N10

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Mfr.Part #
IXTH75N10
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 100V 75A TO247
Stock
1
In Stock :
1

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Number of Channels :
1 Channel
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Drive Voltage (Max Rds On,Min Rds On) :
10V
Mounting Type :
Through Hole
Transistor Element Material :
SILICON
Transistor Application :
AMPLIFIER
Drain to Source Voltage (Vdss) :
100V
Rds On (Max) @ Id, Vgs :
21m Ω @ 500mA, 10V
Minimum Operating Temperature :
- 55 C
Brand :
IXYS
Element Configuration :
Single
Additional Feature :
AVALANCHE RATED
Mount :
Through Hole
Package :
Tube
Pulsed Drain Current-Max (IDM) :
225A
Power Dissipation :
400W
Channel Mode :
Enhancement
Base Product Number :
IXTH75
Package / Case :
TO-247-3
Gate Charge (Qg) (Max) @ Vgs :
215nC @ 10V
Number of Terminations :
3
Vgs(th) (Max) @ Id :
4.5V @ 250μA
Configuration :
Single
Pbfree Code :
yes
Product Status :
Active
Drain to Source Breakdown Voltage :
100V
RoHS :
Details
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
FET Feature :
--
Continuous Drain Current (ID) :
75A
Supplier Device Package :
TO-247 (IXTH)
Lead Free :
Lead Free
Mounting Style :
Through Hole
Avalanche Energy Rating (Eas) :
2500 mJ
Power Dissipation (Max) :
400W (Tc)
ECCN Code :
EAR99
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Current - Continuous Drain (Id) @ 25°C :
75A Tc
Published :
2009
Operating Temperature :
-55°C~150°C TJ
Packaging :
Tube
Input Capacitance (Ciss) (Max) @ Vds :
8100pF @ 25V
Series :
Linear L2™
Drain-source On Resistance-Max :
0.021Ohm
Power Dissipation-Max :
400W Tc
JESD-609 Code :
e1
Vgs (Max) :
±20V
Gate to Source Voltage (Vgs) :
20V
Case Connection :
DRAIN
Transistor Type :
1 N-Channel
Reach Compliance Code :
Unknown
Manufacturer :
IXYS
Operating Mode :
ENHANCEMENT MODE
RoHS Status :
ROHS3 Compliant
Product Type :
MOSFET
FET Type :
N-Channel
Product Category :
MOSFET
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Factory Lead Time :
28 Weeks
Qualification Status :
Not Qualified
JESD-30 Code :
R-PSFM-T3
Pin Count :
3
Maximum Operating Temperature :
+ 150 C
Number of Elements :
1
Transistor Polarity :
N-Channel
Datasheets
IXTH75N10
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTH75N10 from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1 Channel, Mounting Type:Through Hole, Package / Case:TO-247-3, Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, IXTH75N10 pinout, IXTH75N10 datasheet PDF, IXTH75N10 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTH75N10 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTH75N10


N-Channel Tube 21m Ω @ 500mA, 10V ±20V 8100pF @ 25V 215nC @ 10V 100V TO-247-3

IXTH75N10L2 Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 2500 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 8100pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 75A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=100V. And this device has 100V drain to source breakdown voltage.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 225A.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Operating this transistor requires a 100V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

IXTH75N10L2 Features


the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 75A
a drain-to-source breakdown voltage of 100V voltage
based on its rated peak drain current 225A.
a 100V drain to source voltage (Vdss)


IXTH75N10L2 Applications


There are a lot of IXYS
IXTH75N10L2 applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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