IXTH72N20
- Mfr.Part #
- IXTH72N20
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 72A TO247
- Stock
- 35,213
- In Stock :
- 35,213
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Pulsed Drain Current-Max (IDM) :
- 288A
- Maximum Operating Temperature :
- + 150 C
- Terminal Position :
- Single
- Vgs (Max) :
- ±20V
- Number of Terminals :
- 3
- Transistor Element Material :
- SILICON
- JESD-30 Code :
- R-PSFM-T3
- Mounting Style :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- ECCN Code :
- EAR99
- Minimum Operating Temperature :
- - 55 C
- Number of Elements :
- 1
- Rds On (Max) @ Id, Vgs :
- 33m Ω @ 500mA, 10V
- Power Dissipation-Max :
- 400W Tc
- Transistor Polarity :
- N-Channel
- Case Connection :
- DRAIN
- Base Product Number :
- IXTH72
- Product Type :
- MOSFET
- Height :
- 21.46 mm
- Channel Mode :
- Enhancement
- Number of Channels :
- 1 Channel
- Pin Count :
- 3
- DS Breakdown Voltage-Min :
- 200 V
- Manufacturer :
- IXYS
- Number of Pins :
- 3
- Gate Charge (Qg) (Max) @ Vgs :
- 170nC @ 10V
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Application :
- SWITCHING
- Product Category :
- MOSFET
- Package Shape :
- RECTANGULAR
- Drain-source On Resistance-Max :
- 0.033 Ω
- Fall Time (Typ) :
- 20 ns
- Terminal Form :
- THROUGH-HOLE
- Power Dissipation :
- 400W
- Turn-Off Delay Time :
- 80 ns
- Product Status :
- Active
- Reach Compliance Code :
- Compliant
- RoHS :
- Details
- Pbfree Code :
- yes
- Operating Temperature :
- -55°C~150°C TJ
- Brand :
- IXYS
- Mount :
- Through Hole
- Configuration :
- Single
- Width :
- 5.3 mm
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Element Configuration :
- Single
- Polarity/Channel Type :
- N-Channel
- Qualification Status :
- Not Qualified
- Package / Case :
- TO-247-3
- Mounting Type :
- Through Hole
- Surface Mount :
- No
- Current - Continuous Drain (Id) @ 25°C :
- 72A Tc
- Input Capacitance (Ciss) (Max) @ Vds :
- 4400pF @ 25V
- Packaging :
- Tube
- Supplier Device Package :
- TO-247 (IXTH)
- Power Dissipation (Max) :
- 400W (Tc)
- Continuous Drain Current (ID) :
- 72A
- FET Type :
- N-Channel
- Avalanche Energy Rating (Eas) :
- 1500 mJ
- Drain to Source Breakdown Voltage :
- 200V
- JEDEC-95 Code :
- TO-247AD
- FET Feature :
- --
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Length :
- 16.26 mm
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Subcategory :
- MOSFETs
- Series :
- --
- Number of Terminations :
- 3
- Drain to Source Voltage (Vdss) :
- 200V
- Package :
- Tube
- Transistor Type :
- 1 N-Channel
- Rise Time :
- 30ns
- Published :
- 2003
- RoHS Status :
- ROHS3 Compliant
- Gate to Source Voltage (Vgs) :
- 20V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Datasheets
- IXTH72N20
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N-Channel Tube 33m Ω @ 500mA, 10V ±20V 4400pF @ 25V 170nC @ 10V 200V TO-247-3
IXTH72N20 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 1500 mJ.A device's maximum input capacitance is 4400pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 72A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=200V, and this device has a drain-to-source breakdown voltage of 200V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 80 ns.Its maximum pulsed drain current is 288A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.For normal operation, maintain the DS breakdown voltage above 200 V.To operate this transistor, you need to apply a 200V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IXTH72N20 Features
the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 72A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 80 ns
based on its rated peak drain current 288A.
a 200V drain to source voltage (Vdss)
IXTH72N20 Applications
There are a lot of IXYS
IXTH72N20 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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