IXTH72N20

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Mfr.Part #
IXTH72N20
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 200V 72A TO247
Stock
35,213
In Stock :
35,213

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Pulsed Drain Current-Max (IDM) :
288A
Maximum Operating Temperature :
+ 150 C
Terminal Position :
Single
Vgs (Max) :
±20V
Number of Terminals :
3
Transistor Element Material :
SILICON
JESD-30 Code :
R-PSFM-T3
Mounting Style :
Through Hole
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
FET Technology :
METAL-OXIDE SEMICONDUCTOR
ECCN Code :
EAR99
Minimum Operating Temperature :
- 55 C
Number of Elements :
1
Rds On (Max) @ Id, Vgs :
33m Ω @ 500mA, 10V
Power Dissipation-Max :
400W Tc
Transistor Polarity :
N-Channel
Case Connection :
DRAIN
Base Product Number :
IXTH72
Product Type :
MOSFET
Height :
21.46 mm
Channel Mode :
Enhancement
Number of Channels :
1 Channel
Pin Count :
3
DS Breakdown Voltage-Min :
200 V
Manufacturer :
IXYS
Number of Pins :
3
Gate Charge (Qg) (Max) @ Vgs :
170nC @ 10V
Operating Mode :
ENHANCEMENT MODE
Transistor Application :
SWITCHING
Product Category :
MOSFET
Package Shape :
RECTANGULAR
Drain-source On Resistance-Max :
0.033 Ω
Fall Time (Typ) :
20 ns
Terminal Form :
THROUGH-HOLE
Power Dissipation :
400W
Turn-Off Delay Time :
80 ns
Product Status :
Active
Reach Compliance Code :
Compliant
RoHS :
Details
Pbfree Code :
yes
Operating Temperature :
-55°C~150°C TJ
Brand :
IXYS
Mount :
Through Hole
Configuration :
Single
Width :
5.3 mm
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Element Configuration :
Single
Polarity/Channel Type :
N-Channel
Qualification Status :
Not Qualified
Package / Case :
TO-247-3
Mounting Type :
Through Hole
Surface Mount :
No
Current - Continuous Drain (Id) @ 25°C :
72A Tc
Input Capacitance (Ciss) (Max) @ Vds :
4400pF @ 25V
Packaging :
Tube
Supplier Device Package :
TO-247 (IXTH)
Power Dissipation (Max) :
400W (Tc)
Continuous Drain Current (ID) :
72A
FET Type :
N-Channel
Avalanche Energy Rating (Eas) :
1500 mJ
Drain to Source Breakdown Voltage :
200V
JEDEC-95 Code :
TO-247AD
FET Feature :
--
Vgs(th) (Max) @ Id :
4V @ 250µA
Length :
16.26 mm
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Subcategory :
MOSFETs
Series :
--
Number of Terminations :
3
Drain to Source Voltage (Vdss) :
200V
Package :
Tube
Transistor Type :
1 N-Channel
Rise Time :
30ns
Published :
2003
RoHS Status :
ROHS3 Compliant
Gate to Source Voltage (Vgs) :
20V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Datasheets
IXTH72N20
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTH72N20 from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1 Channel, Number of Pins:3, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-247-3, Mounting Type:Through Hole, Number of Terminations:3, IXTH72N20 pinout, IXTH72N20 datasheet PDF, IXTH72N20 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTH72N20 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTH72N20


N-Channel Tube 33m Ω @ 500mA, 10V ±20V 4400pF @ 25V 170nC @ 10V 200V TO-247-3

IXTH72N20 Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 1500 mJ.A device's maximum input capacitance is 4400pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 72A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=200V, and this device has a drain-to-source breakdown voltage of 200V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 80 ns.Its maximum pulsed drain current is 288A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.For normal operation, maintain the DS breakdown voltage above 200 V.To operate this transistor, you need to apply a 200V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

IXTH72N20 Features


the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 72A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 80 ns
based on its rated peak drain current 288A.
a 200V drain to source voltage (Vdss)


IXTH72N20 Applications


There are a lot of IXYS
IXTH72N20 applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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