IXTH6N90A

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Mfr.Part #
IXTH6N90A
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 900V 6A TO247
Stock
34,645
In Stock :
34,645

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Surface Mount :
No
Transistor Application :
SWITCHING
Gate to Source Voltage (Vgs) :
20V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Pin Count :
3
Input Capacitance :
2.6 nF
JEDEC-95 Code :
TO-247AD
Mounting Type :
Through Hole
Package / Case :
TO-247-3
JESD-30 Code :
R-PSFM-T3
FET Feature :
--
Terminal Position :
Single
Continuous Drain Current (ID) :
6A
Base Product Number :
IXTH6
Drive Voltage (Max Rds On,Min Rds On) :
10V
Polarity/Channel Type :
N-Channel
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Number of Elements :
1
Current - Continuous Drain (Id) @ 25°C :
6A Tc
Transistor Element Material :
SILICON
Element Configuration :
Single
Reach Compliance Code :
Compliant
Drain-source On Resistance-Max :
1.4 Ω
FET Type :
N-Channel
Input Capacitance (Ciss) (Max) @ Vds :
2600pF @ 25V
Drain to Source Breakdown Voltage :
900V
Rds On (Max) @ Id, Vgs :
1.4 Ω @ 3A, 10V
Packaging :
Tube
Mount :
Through Hole
Max Operating Temperature :
150 °C
Rds On Max :
1.4 Ω
Number of Terminals :
3
Power Dissipation-Max :
180W Tc
Vgs(th) (Max) @ Id :
4.5V @ 250μA
Package Shape :
RECTANGULAR
Max Power Dissipation :
180 W
Manufacturer :
IXYS Corporation
Published :
2000
Power Dissipation (Max) :
180W (Tc)
Rise Time :
40ns
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Power Dissipation :
180W
Min Operating Temperature :
-55 °C
Pbfree Code :
yes
Pulsed Drain Current-Max (IDM) :
24A
Package :
Tube
Drain to Source Resistance :
1.4 Ω
Supplier Device Package :
TO-247 (IXTH)
Fall Time (Typ) :
60 ns
Drain Current-Max (Abs) (ID) :
6A
Number of Terminations :
3
Power Dissipation-Max (Abs) :
175 W
Turn-Off Delay Time :
100 ns
Drain to Source Voltage (Vdss) :
900V
Configuration :
SINGLE WITH BUILT-IN DIODE
Number of Pins :
3
Gate Charge (Qg) (Max) @ Vgs :
130nC @ 10V
Product Status :
Active
RoHS Status :
ROHS3 Compliant
Terminal Form :
THROUGH-HOLE
Operating Mode :
ENHANCEMENT MODE
Vgs (Max) :
±20V
Qualification Status :
Not Qualified
Operating Temperature :
-55°C~150°C TJ
Power Dissipation Ambient-Max :
180 W
Case Connection :
DRAIN
RoHS :
Compliant
Series :
--
DS Breakdown Voltage-Min :
900 V
Datasheets
IXTH6N90A
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTH6N90A from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Package / Case:TO-247-3, Number of Terminations:3, Number of Pins:3, Operating Temperature:-55°C~150°C TJ, IXTH6N90A pinout, IXTH6N90A datasheet PDF, IXTH6N90A amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTH6N90A ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTH6N90A


N-Channel Tube 1.4 Ω @ 3A, 10V ±20V 2600pF @ 25V 130nC @ 10V 900V TO-247-3

IXTH6N90A Overview


Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 2600pF @ 25V.This device has a continuous drain current (ID) of [6A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=900V, the drain-source breakdown voltage is 900V.A device's drain current is its maximum continuous current, and this device's drain current is 6A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 100 ns.A maximum pulsed drain current of 24A is the maximum peak drain current rated for this device.MOSFETs have 1.4 Ω resistance between the drain and the source when biased into the on state by a gate-to-source voltage (VGS).Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 900 V.In order to operate this transistor, a voltage of 900V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IXTH6N90A Features


a continuous drain current (ID) of 6A
a drain-to-source breakdown voltage of 900V voltage
the turn-off delay time is 100 ns
based on its rated peak drain current 24A.
single MOSFETs transistor is 1.4 Ω
a 900V drain to source voltage (Vdss)


IXTH6N90A Applications


There are a lot of IXYS
IXTH6N90A applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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