IXTH6N90A
- Mfr.Part #
- IXTH6N90A
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 900V 6A TO247
- Stock
- 34,645
- In Stock :
- 34,645
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Surface Mount :
- No
- Transistor Application :
- SWITCHING
- Gate to Source Voltage (Vgs) :
- 20V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Pin Count :
- 3
- Input Capacitance :
- 2.6 nF
- JEDEC-95 Code :
- TO-247AD
- Mounting Type :
- Through Hole
- Package / Case :
- TO-247-3
- JESD-30 Code :
- R-PSFM-T3
- FET Feature :
- --
- Terminal Position :
- Single
- Continuous Drain Current (ID) :
- 6A
- Base Product Number :
- IXTH6
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Polarity/Channel Type :
- N-Channel
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Number of Elements :
- 1
- Current - Continuous Drain (Id) @ 25°C :
- 6A Tc
- Transistor Element Material :
- SILICON
- Element Configuration :
- Single
- Reach Compliance Code :
- Compliant
- Drain-source On Resistance-Max :
- 1.4 Ω
- FET Type :
- N-Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 2600pF @ 25V
- Drain to Source Breakdown Voltage :
- 900V
- Rds On (Max) @ Id, Vgs :
- 1.4 Ω @ 3A, 10V
- Packaging :
- Tube
- Mount :
- Through Hole
- Max Operating Temperature :
- 150 °C
- Rds On Max :
- 1.4 Ω
- Number of Terminals :
- 3
- Power Dissipation-Max :
- 180W Tc
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Package Shape :
- RECTANGULAR
- Max Power Dissipation :
- 180 W
- Manufacturer :
- IXYS Corporation
- Published :
- 2000
- Power Dissipation (Max) :
- 180W (Tc)
- Rise Time :
- 40ns
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Power Dissipation :
- 180W
- Min Operating Temperature :
- -55 °C
- Pbfree Code :
- yes
- Pulsed Drain Current-Max (IDM) :
- 24A
- Package :
- Tube
- Drain to Source Resistance :
- 1.4 Ω
- Supplier Device Package :
- TO-247 (IXTH)
- Fall Time (Typ) :
- 60 ns
- Drain Current-Max (Abs) (ID) :
- 6A
- Number of Terminations :
- 3
- Power Dissipation-Max (Abs) :
- 175 W
- Turn-Off Delay Time :
- 100 ns
- Drain to Source Voltage (Vdss) :
- 900V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Number of Pins :
- 3
- Gate Charge (Qg) (Max) @ Vgs :
- 130nC @ 10V
- Product Status :
- Active
- RoHS Status :
- ROHS3 Compliant
- Terminal Form :
- THROUGH-HOLE
- Operating Mode :
- ENHANCEMENT MODE
- Vgs (Max) :
- ±20V
- Qualification Status :
- Not Qualified
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation Ambient-Max :
- 180 W
- Case Connection :
- DRAIN
- RoHS :
- Compliant
- Series :
- --
- DS Breakdown Voltage-Min :
- 900 V
- Datasheets
- IXTH6N90A
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N-Channel Tube 1.4 Ω @ 3A, 10V ±20V 2600pF @ 25V 130nC @ 10V 900V TO-247-3
IXTH6N90A Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 2600pF @ 25V.This device has a continuous drain current (ID) of [6A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=900V, the drain-source breakdown voltage is 900V.A device's drain current is its maximum continuous current, and this device's drain current is 6A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 100 ns.A maximum pulsed drain current of 24A is the maximum peak drain current rated for this device.MOSFETs have 1.4 Ω resistance between the drain and the source when biased into the on state by a gate-to-source voltage (VGS).Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 900 V.In order to operate this transistor, a voltage of 900V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IXTH6N90A Features
a continuous drain current (ID) of 6A
a drain-to-source breakdown voltage of 900V voltage
the turn-off delay time is 100 ns
based on its rated peak drain current 24A.
single MOSFETs transistor is 1.4 Ω
a 900V drain to source voltage (Vdss)
IXTH6N90A Applications
There are a lot of IXYS
IXTH6N90A applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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