IXTH6N90

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Terminal Form :

THROUGH-HOLE

Number of Pins :

3

Mount :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

130nC @ 10V

Power Dissipation-Max :

180W Tc

Continuous Drain Current (ID) :

6A

Power Dissipation :

180W

Fall Time (Typ) :

60 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

Package / Case :

TO-247-3

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Application :

SWITCHING

Drain to Source Voltage (Vdss) :

900V

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

JESD-30 Code :

R-PSFM-T3

Mounting Type :

Through Hole

Peak Reflow Temperature (Cel) :

260

Pbfree Code :

yes

Manufacturer :

IXYS Corporation

Power Dissipation-Max (Abs) :

175 W

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

6A Tc

Base Product Number :

IXTH6

Pulsed Drain Current-Max (IDM) :

24A

Power Dissipation (Max) :

180W (Tc)

Drain-source On Resistance-Max :

1.8 Ω

Surface Mount :

No

FET Type :

N-Channel

Drain to Source Breakdown Voltage :

900V

Gate to Source Voltage (Vgs) :

20V

Supplier Device Package :

TO-247 (IXTH)

Published :

2000

Element Configuration :

Single

Power Dissipation Ambient-Max :

180 W

Product Status :

Active

Number of Terminals :

3

Pin Count :

3

Operating Mode :

ENHANCEMENT MODE

Resistance :

4.5Ohm

Terminal Position :

Single

FET Feature :

--

Turn-Off Delay Time :

100 ns

DS Breakdown Voltage-Min :

900 V

Rise Time :

40ns

Input Capacitance (Ciss) (Max) @ Vds :

2600pF @ 25V

Lead Free :

Lead Free

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

35

JEDEC-95 Code :

TO-247AD

Case Connection :

DRAIN

Factory Lead Time :

8 Weeks

Terminal Finish :

Matte Tin (Sn)

Packaging :

Tube

Polarity/Channel Type :

N-Channel

Qualification Status :

Not Qualified

Series :

--

Drain Current-Max (Abs) (ID) :

6A

Reach Compliance Code :

not_compliant

Rds On (Max) @ Id, Vgs :

1.8 Ω @ 500mA, 10V

Package :

Tube

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package Shape :

RECTANGULAR

Number of Terminations :

3