IXTH6N50D2

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Factory Lead Time :

24 Weeks

Pbfree Code :

yes

Current - Continuous Drain (Id) @ 25°C :

6A Tc

Pin Count :

3

Brand :

IXYS

Continuous Drain Current (ID) :

6A

Vgs (Max) :

±20V

Transistor Polarity :

N-Channel

Case Connection :

DRAIN

Number of Channels :

1 Channel

FET Feature :

Depletion Mode

Product Type :

MOSFET

Drive Voltage (Max Rds On, Min Rds On) :

--

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Transistor Application :

AMPLIFIER

Maximum Operating Temperature :

+ 150 C

Mounting Style :

Through Hole

Base Product Number :

IXTH6

Minimum Operating Temperature :

- 55 C

FET Type :

N-Channel

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

--

Additional Feature :

UL RECOGNIZED

Channel Mode :

Depletion

Package :

Tube

Manufacturer :

IXYS

Transistor Type :

1 N-Channel

JESD-609 Code :

e1

Product Category :

MOSFET

Mount :

Through Hole

Terminal Position :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

500V

JESD-30 Code :

R-PSFM-T3

Drain-source On Resistance-Max :

0.5Ohm

RoHS :

Details

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1

Mounting Type :

Through Hole

Transistor Element Material :

SILICON

Package / Case :

TO-247-3

Product Status :

Active

Rds On (Max) @ Id, Vgs :

500m Ω @ 3A, 0V

Supplier Device Package :

TO-247 (IXTH)

Power Dissipation-Max :

300W Tc

Reach Compliance Code :

Unknown

Series :

--

Number of Terminations :

3

Published :

2011

Packaging :

Tube

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Configuration :

SINGLE WITH BUILT-IN DIODE

Qualification Status :

Not Qualified

Input Capacitance (Ciss) (Max) @ Vds :

2800pF @ 25V

Power Dissipation (Max) :

300W (Tc)

Gate Charge (Qg) (Max) @ Vgs :

96nC @ 5V

RoHS Status :

ROHS3 Compliant

Rise Time :

72 ns