IXTH6N150
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- Mfr.Part #
- IXTH6N150
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 1500V 6A TO247
- Stock
- 45,130
- In Stock ：
- 45,130
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 2230pF @ 25V
- Vgs (Max) :
- ±20V
- Product Status :
- Active
- Number of Terminations :
- 3
- Base Product Number :
- IXTH6
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Product Category :
- MOSFET
- Rds On (Max) @ Id, Vgs :
- 3.5 Ω @ 500mA, 10V
- Number of Pins :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Continuous Drain Current (ID) :
- 6A
- Channel Mode :
- Enhancement
- Supplier Device Package :
- TO-247 (IXTH)
- Published :
- 2012
- Manufacturer :
- IXYS
- Transistor Polarity :
- N-Channel
- Drain Current-Max (Abs) (ID) :
- 6A
- Brand :
- IXYS
- Packaging :
- Tube
- Current - Continuous Drain (Id) @ 25°C :
- 6A Tc
- Package / Case :
- TO-247-3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Gate Charge (Qg) (Max) @ Vgs :
- 67nC @ 10V
- Operating Temperature :
- -55°C~150°C TJ
- Package :
- Tube
- Operating Mode :
- ENHANCEMENT MODE
- Series :
- --
- Terminal Position :
- Single
- Power Dissipation (Max) :
- 540W (Tc)
- Product :
- Power MOSFETs
- Type :
- High Voltage Power MOSFET
- Avalanche Energy Rating (Eas) :
- 500 mJ
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- FET Type :
- N-Channel
- Reach Compliance Code :
- Unknown
- Drain to Source Voltage (Vdss) :
- 1500V
- RoHS :
- Details
- Mounting Style :
- Through Hole
- Minimum Operating Temperature :
- - 55 C
- Additional Feature :
- AVALANCHE RATED
- Transistor Application :
- SWITCHING
- Product Type :
- MOSFET
- Maximum Operating Temperature :
- + 150 C
- Mounting Type :
- Through Hole
- Number of Elements :
- 1
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Mount :
- Through Hole
- Rise Time :
- 20 ns
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max :
- 540W Tc
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e1
- Qualification Status :
- Not Qualified
- Pbfree Code :
- yes
- Case Connection :
- DRAIN
- RoHS Status :
- ROHS3 Compliant
- DS Breakdown Voltage-Min :
- 1500V
- Pin Count :
- 3
- Lead Free :
- Lead Free
- Pulsed Drain Current-Max (IDM) :
- 24A
- FET Feature :
- --
- Number of Channels :
- 1 Channel
- Datasheets
- IXTH6N150
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N-Channel Tube 3.5 Ω @ 500mA, 10V ±20V 2230pF @ 25V 67nC @ 10V 1500V TO-247-3
IXTH6N150 Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 500 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 2230pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 6A continuous drain current (ID).Drain current refers to the maximum continuous current a device can conduct, and it is 6A.Peak drain current is 24A, which is the maximum pulsed drain current.Normal operation requires that the DS breakdown voltage remain above 1500V.For this transistor to work, a voltage 1500V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IXTH6N150 Features
the avalanche energy rating (Eas) is 500 mJ
a continuous drain current (ID) of 6A
based on its rated peak drain current 24A.
a 1500V drain to source voltage (Vdss)
IXTH6N150 Applications
There are a lot of IXYS
IXTH6N150 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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