IXTH6N150
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- Mfr.Part #
- IXTH6N150
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 1500V 6A TO247
- Stock
- 45,130
- In Stock ：
- 45,130
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Additional Feature :
- AVALANCHE RATED
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Published :
- 2012
- Power Dissipation (Max) :
- 540W (Tc)
- Supplier Device Package :
- TO-247 (IXTH)
- Mounting Style :
- Through Hole
- DS Breakdown Voltage-Min :
- 1500V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Product Category :
- MOSFET
- Transistor Polarity :
- N-Channel
- Mounting Type :
- Through Hole
- Case Connection :
- DRAIN
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Operating Temperature :
- -55°C~150°C TJ
- Mount :
- Through Hole
- Power Dissipation-Max :
- 540W Tc
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- TO-247-3
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Base Product Number :
- IXTH6
- Number of Pins :
- 3
- Product Status :
- Active
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Pulsed Drain Current-Max (IDM) :
- 24A
- Number of Channels :
- 1 Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 67nC @ 10V
- Operating Mode :
- ENHANCEMENT MODE
- Drain to Source Voltage (Vdss) :
- 1500V
- FET Feature :
- --
- Input Capacitance (Ciss) (Max) @ Vds :
- 2230pF @ 25V
- Rds On (Max) @ Id, Vgs :
- 3.5 Ω @ 500mA, 10V
- Packaging :
- Tube
- Manufacturer :
- IXYS
- Transistor Application :
- SWITCHING
- Product Type :
- MOSFET
- Maximum Operating Temperature :
- + 150 C
- Type :
- High Voltage Power MOSFET
- Lead Free :
- Lead Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Product :
- Power MOSFETs
- Rise Time :
- 20 ns
- FET Type :
- N-Channel
- Pbfree Code :
- yes
- Transistor Element Material :
- SILICON
- RoHS :
- Details
- Drain Current-Max (Abs) (ID) :
- 6A
- Current - Continuous Drain (Id) @ 25°C :
- 6A Tc
- Package :
- Tube
- Channel Mode :
- Enhancement
- Reach Compliance Code :
- Unknown
- Avalanche Energy Rating (Eas) :
- 500 mJ
- JESD-609 Code :
- e1
- Minimum Operating Temperature :
- - 55 C
- Number of Terminations :
- 3
- Qualification Status :
- Not Qualified
- Pin Count :
- 3
- Continuous Drain Current (ID) :
- 6A
- Terminal Position :
- Single
- Brand :
- IXYS
- Series :
- --
- Vgs (Max) :
- ±20V
- Datasheets
- IXTH6N150
IXTH6N150 Documents
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N-Channel Tube 3.5 Ω @ 500mA, 10V ±20V 2230pF @ 25V 67nC @ 10V 1500V TO-247-3
IXTH6N150 Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 500 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 2230pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 6A continuous drain current (ID).Drain current refers to the maximum continuous current a device can conduct, and it is 6A.Peak drain current is 24A, which is the maximum pulsed drain current.Normal operation requires that the DS breakdown voltage remain above 1500V.For this transistor to work, a voltage 1500V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IXTH6N150 Features
the avalanche energy rating (Eas) is 500 mJ
a continuous drain current (ID) of 6A
based on its rated peak drain current 24A.
a 1500V drain to source voltage (Vdss)
IXTH6N150 Applications
There are a lot of IXYS
IXTH6N150 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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