IXTH6N150
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- Mfr.Part #
- IXTH6N150
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 1500V 6A TO247
- Stock
- 45,130
- In Stock ：
- 45,130
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Pins :
- 3
- Product Category :
- MOSFET
- Transistor Element Material :
- SILICON
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Reach Compliance Code :
- Unknown
- Product Type :
- MOSFET
- Power Dissipation (Max) :
- 540W (Tc)
- Pin Count :
- 3
- Number of Elements :
- 1
- FET Type :
- N-Channel
- Number of Channels :
- 1 Channel
- Continuous Drain Current (ID) :
- 6A
- Base Product Number :
- IXTH6
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Qualification Status :
- Not Qualified
- Rise Time :
- 20 ns
- Transistor Application :
- SWITCHING
- Series :
- --
- Supplier Device Package :
- TO-247 (IXTH)
- DS Breakdown Voltage-Min :
- 1500V
- Mount :
- Through Hole
- Product :
- Power MOSFETs
- RoHS :
- Details
- Number of Terminations :
- 3
- Avalanche Energy Rating (Eas) :
- 500 mJ
- Type :
- High Voltage Power MOSFET
- Operating Mode :
- ENHANCEMENT MODE
- Package / Case :
- TO-247-3
- JESD-609 Code :
- e1
- Input Capacitance (Ciss) (Max) @ Vds :
- 2230pF @ 25V
- Published :
- 2012
- Additional Feature :
- AVALANCHE RATED
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Maximum Operating Temperature :
- + 150 C
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Manufacturer :
- IXYS
- Drain to Source Voltage (Vdss) :
- 1500V
- Current - Continuous Drain (Id) @ 25°C :
- 6A Tc
- Terminal Position :
- Single
- Minimum Operating Temperature :
- - 55 C
- Gate Charge (Qg) (Max) @ Vgs :
- 67nC @ 10V
- Packaging :
- Tube
- Mounting Style :
- Through Hole
- Brand :
- IXYS
- Pulsed Drain Current-Max (IDM) :
- 24A
- Vgs (Max) :
- ±20V
- Power Dissipation-Max :
- 540W Tc
- Drain Current-Max (Abs) (ID) :
- 6A
- Mounting Type :
- Through Hole
- Lead Free :
- Lead Free
- Product Status :
- Active
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Rds On (Max) @ Id, Vgs :
- 3.5 Ω @ 500mA, 10V
- RoHS Status :
- ROHS3 Compliant
- Channel Mode :
- Enhancement
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- FET Feature :
- --
- Case Connection :
- DRAIN
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Pbfree Code :
- yes
- Transistor Polarity :
- N-Channel
- Package :
- Tube
- Datasheets
- IXTH6N150
IXTH6N150 Documents
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N-Channel Tube 3.5 Ω @ 500mA, 10V ±20V 2230pF @ 25V 67nC @ 10V 1500V TO-247-3
IXTH6N150 Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 500 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 2230pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 6A continuous drain current (ID).Drain current refers to the maximum continuous current a device can conduct, and it is 6A.Peak drain current is 24A, which is the maximum pulsed drain current.Normal operation requires that the DS breakdown voltage remain above 1500V.For this transistor to work, a voltage 1500V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IXTH6N150 Features
the avalanche energy rating (Eas) is 500 mJ
a continuous drain current (ID) of 6A
based on its rated peak drain current 24A.
a 1500V drain to source voltage (Vdss)
IXTH6N150 Applications
There are a lot of IXYS
IXTH6N150 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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