IXTH6N120
- Mfr.Part #
- IXTH6N120
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 1200V 6A TO247
- Stock
- 1,421
- In Stock :
- 1,421
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rise Time :
- 33ns
- Resistance :
- 2.6Ohm
- Number of Channels :
- 1 Channel
- Power Dissipation :
- 300W
- Vgs (Max) :
- ±20V
- Operating Mode :
- ENHANCEMENT MODE
- Power Dissipation-Max :
- 300W Tc
- Avalanche Energy Rating (Eas) :
- 500 mJ
- Reach Compliance Code :
- not_compliant
- Pbfree Code :
- yes
- Turn-Off Delay Time :
- 42 ns
- Lead Free :
- Lead Free
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- FET Feature :
- --
- Number of Terminations :
- 3
- Product Category :
- MOSFET
- Package / Case :
- TO-247-3
- Continuous Drain Current (ID) :
- 6A
- Length :
- 16.26 mm
- Maximum Operating Temperature :
- + 150 C
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Application :
- SWITCHING
- Input Capacitance (Ciss) (Max) @ Vds :
- 1950pF @ 25V
- Operating Temperature :
- -55°C~150°C TJ
- Package :
- Box
- ECCN Code :
- EAR99
- Product Status :
- Active
- Manufacturer :
- IXYS
- Channel Mode :
- Enhancement
- Power Dissipation (Max) :
- 300W (Tc)
- Supplier Device Package :
- TO-247 (IXTH)
- Configuration :
- Single
- Product Type :
- MOSFET
- Packaging :
- Tube
- Subcategory :
- MOSFETs
- Width :
- 5.3 mm
- Drain to Source Breakdown Voltage :
- 1.2kV
- Current - Continuous Drain (Id) @ 25°C :
- 6A Tc
- Height :
- 21.46 mm
- Case Connection :
- DRAIN
- Additional Feature :
- AVALANCHE RATED
- Brand :
- IXYS
- Transistor Polarity :
- N-Channel
- Number of Elements :
- 1
- RoHS :
- Details
- Rds On (Max) @ Id, Vgs :
- 2.6 Ω @ 3A, 10V
- Base Product Number :
- IXTH6
- Drain Current-Max (Abs) (ID) :
- 6A
- Published :
- 2004
- Number of Pins :
- 3
- Pulsed Drain Current-Max (IDM) :
- 24A
- Transistor Type :
- 1 N-Channel
- Transistor Element Material :
- SILICON
- JEDEC-95 Code :
- TO-247AD
- Element Configuration :
- Single
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Gate Charge (Qg) (Max) @ Vgs :
- 56nC @ 10V
- Mount :
- Through Hole
- Gate to Source Voltage (Vgs) :
- 20V
- RoHS Status :
- ROHS3 Compliant
- Minimum Operating Temperature :
- - 55 C
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- FET Type :
- N-Channel
- Drain to Source Voltage (Vdss) :
- 1200V
- Qualification Status :
- Not Qualified
- Pin Count :
- 3
- Series :
- --
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Factory Lead Time :
- 28 Weeks
- Mounting Type :
- Through Hole
- Mounting Style :
- Through Hole
- Fall Time (Typ) :
- 18 ns
- Datasheets
- IXTH6N120
IXTH6N120 Documents
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N-Channel Tube 2.6 Ω @ 3A, 10V ±20V 1950pF @ 25V 56nC @ 10V 1200V TO-247-3
IXTH6N120 Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 500 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 1950pF @ 25V.This device has a continuous drain current (ID) of [6A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=1.2kV, the drain-source breakdown voltage is 1.2kV.A device's drain current is its maximum continuous current, and this device's drain current is 6A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 42 ns.A maximum pulsed drain current of 24A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to operate this transistor, a voltage of 1200V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IXTH6N120 Features
the avalanche energy rating (Eas) is 500 mJ
a continuous drain current (ID) of 6A
a drain-to-source breakdown voltage of 1.2kV voltage
the turn-off delay time is 42 ns
based on its rated peak drain current 24A.
a 1200V drain to source voltage (Vdss)
IXTH6N120 Applications
There are a lot of IXYS
IXTH6N120 applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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