IXTH6N120
- Mfr.Part #
- IXTH6N120
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 1200V 6A TO247
- Stock
- 1,421
- In Stock :
- 1,421
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Reach Compliance Code :
- not_compliant
- Configuration :
- Single
- Packaging :
- Tube
- Transistor Polarity :
- N-Channel
- Package / Case :
- TO-247-3
- Rise Time :
- 33ns
- Package :
- Box
- Supplier Device Package :
- TO-247 (IXTH)
- Qualification Status :
- Not Qualified
- FET Type :
- N-Channel
- Power Dissipation-Max :
- 300W Tc
- Mounting Type :
- Through Hole
- Gate to Source Voltage (Vgs) :
- 20V
- Drain to Source Voltage (Vdss) :
- 1200V
- Transistor Application :
- SWITCHING
- Case Connection :
- DRAIN
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation (Max) :
- 300W (Tc)
- Pin Count :
- 3
- Current - Continuous Drain (Id) @ 25°C :
- 6A Tc
- Product Category :
- MOSFET
- Number of Channels :
- 1 Channel
- JEDEC-95 Code :
- TO-247AD
- Channel Mode :
- Enhancement
- Subcategory :
- MOSFETs
- Pbfree Code :
- yes
- Gate Charge (Qg) (Max) @ Vgs :
- 56nC @ 10V
- Mount :
- Through Hole
- Factory Lead Time :
- 28 Weeks
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Brand :
- IXYS
- Published :
- 2004
- Minimum Operating Temperature :
- - 55 C
- Continuous Drain Current (ID) :
- 6A
- FET Feature :
- --
- Length :
- 16.26 mm
- Lead Free :
- Lead Free
- Transistor Element Material :
- SILICON
- Avalanche Energy Rating (Eas) :
- 500 mJ
- Vgs (Max) :
- ±20V
- Product Type :
- MOSFET
- Width :
- 5.3 mm
- Element Configuration :
- Single
- Rds On (Max) @ Id, Vgs :
- 2.6 Ω @ 3A, 10V
- Number of Elements :
- 1
- Base Product Number :
- IXTH6
- Pulsed Drain Current-Max (IDM) :
- 24A
- Mounting Style :
- Through Hole
- ECCN Code :
- EAR99
- Series :
- --
- Drain Current-Max (Abs) (ID) :
- 6A
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Fall Time (Typ) :
- 18 ns
- Operating Mode :
- ENHANCEMENT MODE
- Maximum Operating Temperature :
- + 150 C
- RoHS Status :
- ROHS3 Compliant
- RoHS :
- Details
- Height :
- 21.46 mm
- Additional Feature :
- AVALANCHE RATED
- Turn-Off Delay Time :
- 42 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Resistance :
- 2.6Ohm
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Drain to Source Breakdown Voltage :
- 1.2kV
- Number of Pins :
- 3
- Number of Terminations :
- 3
- Power Dissipation :
- 300W
- Transistor Type :
- 1 N-Channel
- Product Status :
- Active
- Manufacturer :
- IXYS
- Input Capacitance (Ciss) (Max) @ Vds :
- 1950pF @ 25V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Datasheets
- IXTH6N120
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N-Channel Tube 2.6 Ω @ 3A, 10V ±20V 1950pF @ 25V 56nC @ 10V 1200V TO-247-3
IXTH6N120 Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 500 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 1950pF @ 25V.This device has a continuous drain current (ID) of [6A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=1.2kV, the drain-source breakdown voltage is 1.2kV.A device's drain current is its maximum continuous current, and this device's drain current is 6A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 42 ns.A maximum pulsed drain current of 24A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to operate this transistor, a voltage of 1200V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IXTH6N120 Features
the avalanche energy rating (Eas) is 500 mJ
a continuous drain current (ID) of 6A
a drain-to-source breakdown voltage of 1.2kV voltage
the turn-off delay time is 42 ns
based on its rated peak drain current 24A.
a 1200V drain to source voltage (Vdss)
IXTH6N120 Applications
There are a lot of IXYS
IXTH6N120 applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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