IXTH6N120

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Mfr.Part #
IXTH6N120
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 1200V 6A TO247
Stock
1,421
In Stock :
1,421

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Reach Compliance Code :
not_compliant
Configuration :
Single
Packaging :
Tube
Transistor Polarity :
N-Channel
Package / Case :
TO-247-3
Rise Time :
33ns
Package :
Box
Supplier Device Package :
TO-247 (IXTH)
Qualification Status :
Not Qualified
FET Type :
N-Channel
Power Dissipation-Max :
300W Tc
Mounting Type :
Through Hole
Gate to Source Voltage (Vgs) :
20V
Drain to Source Voltage (Vdss) :
1200V
Transistor Application :
SWITCHING
Case Connection :
DRAIN
Operating Temperature :
-55°C~150°C TJ
Power Dissipation (Max) :
300W (Tc)
Pin Count :
3
Current - Continuous Drain (Id) @ 25°C :
6A Tc
Product Category :
MOSFET
Number of Channels :
1 Channel
JEDEC-95 Code :
TO-247AD
Channel Mode :
Enhancement
Subcategory :
MOSFETs
Pbfree Code :
yes
Gate Charge (Qg) (Max) @ Vgs :
56nC @ 10V
Mount :
Through Hole
Factory Lead Time :
28 Weeks
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Brand :
IXYS
Published :
2004
Minimum Operating Temperature :
- 55 C
Continuous Drain Current (ID) :
6A
FET Feature :
--
Length :
16.26 mm
Lead Free :
Lead Free
Transistor Element Material :
SILICON
Avalanche Energy Rating (Eas) :
500 mJ
Vgs (Max) :
±20V
Product Type :
MOSFET
Width :
5.3 mm
Element Configuration :
Single
Rds On (Max) @ Id, Vgs :
2.6 Ω @ 3A, 10V
Number of Elements :
1
Base Product Number :
IXTH6
Pulsed Drain Current-Max (IDM) :
24A
Mounting Style :
Through Hole
ECCN Code :
EAR99
Series :
--
Drain Current-Max (Abs) (ID) :
6A
Vgs(th) (Max) @ Id :
5V @ 250μA
Fall Time (Typ) :
18 ns
Operating Mode :
ENHANCEMENT MODE
Maximum Operating Temperature :
+ 150 C
RoHS Status :
ROHS3 Compliant
RoHS :
Details
Height :
21.46 mm
Additional Feature :
AVALANCHE RATED
Turn-Off Delay Time :
42 ns
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Resistance :
2.6Ohm
Drive Voltage (Max Rds On,Min Rds On) :
10V
Drain to Source Breakdown Voltage :
1.2kV
Number of Pins :
3
Number of Terminations :
3
Power Dissipation :
300W
Transistor Type :
1 N-Channel
Product Status :
Active
Manufacturer :
IXYS
Input Capacitance (Ciss) (Max) @ Vds :
1950pF @ 25V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Datasheets
IXTH6N120
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTH6N120 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-247-3, Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, Number of Channels:1 Channel, Number of Pins:3, Number of Terminations:3, IXTH6N120 pinout, IXTH6N120 datasheet PDF, IXTH6N120 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTH6N120 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTH6N120


N-Channel Tube 2.6 Ω @ 3A, 10V ±20V 1950pF @ 25V 56nC @ 10V 1200V TO-247-3

IXTH6N120 Overview


There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 500 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 1950pF @ 25V.This device has a continuous drain current (ID) of [6A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=1.2kV, the drain-source breakdown voltage is 1.2kV.A device's drain current is its maximum continuous current, and this device's drain current is 6A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 42 ns.A maximum pulsed drain current of 24A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to operate this transistor, a voltage of 1200V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IXTH6N120 Features


the avalanche energy rating (Eas) is 500 mJ
a continuous drain current (ID) of 6A
a drain-to-source breakdown voltage of 1.2kV voltage
the turn-off delay time is 42 ns
based on its rated peak drain current 24A.
a 1200V drain to source voltage (Vdss)


IXTH6N120 Applications


There are a lot of IXYS
IXTH6N120 applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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