IXTH6N120

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~150°C TJ

Power Dissipation (Max) :

300W (Tc)

Configuration :

Single

Length :

16.26 mm

RoHS :

Details

Package :

Box

Mount :

Through Hole

Case Connection :

DRAIN

Base Product Number :

IXTH6

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Published :

2004

Drain to Source Voltage (Vdss) :

1200V

Mounting Type :

Through Hole

Brand :

IXYS

Package / Case :

TO-247-3

Channel Mode :

Enhancement

Power Dissipation-Max :

300W Tc

Factory Lead Time :

28 Weeks

Product Type :

MOSFET

Current - Continuous Drain (Id) @ 25°C :

6A Tc

Height :

21.46 mm

Lead Free :

Lead Free

Minimum Operating Temperature :

- 55 C

Number of Channels :

1 Channel

Operating Mode :

ENHANCEMENT MODE

Resistance :

2.6Ohm

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

2.6 Ω @ 3A, 10V

Turn-Off Delay Time :

42 ns

Fall Time (Typ) :

18 ns

Product Status :

Active

Gate to Source Voltage (Vgs) :

20V

Transistor Polarity :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Reach Compliance Code :

not_compliant

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Pins :

3

Pin Count :

3

Power Dissipation :

300W

Avalanche Energy Rating (Eas) :

500 mJ

Supplier Device Package :

TO-247 (IXTH)

Subcategory :

MOSFETs

Number of Elements :

1

Product Category :

MOSFET

JEDEC-95 Code :

TO-247AD

ECCN Code :

EAR99

Pulsed Drain Current-Max (IDM) :

24A

Element Configuration :

Single

RoHS Status :

ROHS3 Compliant

Drain to Source Breakdown Voltage :

1.2kV

Mounting Style :

Through Hole

Qualification Status :

Not Qualified

Number of Terminations :

3

Pbfree Code :

yes

Width :

5.3 mm

Additional Feature :

AVALANCHE RATED

Series :

--

Manufacturer :

IXYS

Vgs (Max) :

±20V

Packaging :

Tube

Transistor Application :

SWITCHING

Transistor Type :

1 N-Channel

Vgs(th) (Max) @ Id :

5V @ 250μA

Gate Charge (Qg) (Max) @ Vgs :

56nC @ 10V

Maximum Operating Temperature :

+ 150 C

Continuous Drain Current (ID) :

6A

Input Capacitance (Ciss) (Max) @ Vds :

1950pF @ 25V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rise Time :

33ns

Drain Current-Max (Abs) (ID) :

6A

FET Feature :

--