IXTH68P20T
- Mfr.Part #
- IXTH68P20T
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET P-CH 200V 68A TO247
- Stock
- 20
- In Stock :
- 20
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain-source On Resistance-Max :
- 0.055Ohm
- FET Feature :
- --
- Packaging :
- Tube
- Number of Channels :
- 1 Channel
- Published :
- 2012
- Power Dissipation-Max :
- 568W Tc
- Transistor Application :
- SWITCHING
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Package Shape :
- RECTANGULAR
- Drain Current-Max (Abs) (ID) :
- 68 A
- Minimum Operating Temperature :
- - 55 C
- Number of Terminations :
- 3
- Manufacturer :
- IXYS
- Continuous Drain Current (ID) :
- 68A
- Base Product Number :
- IXTH68
- Terminal Position :
- Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Channel Mode :
- Enhancement
- ECCN Code :
- EAR99
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Transistor Element Material :
- SILICON
- Current - Continuous Drain (Id) @ 25°C :
- 68A Tc
- Product Category :
- MOSFET
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Through Hole
- Number of Elements :
- 1
- Additional Feature :
- AVALANCHE RATED
- Rds On (Max) @ Id, Vgs :
- 55m Ω @ 34A, 10V
- Operating Temperature :
- -55°C~150°C TJ
- Package :
- Tube
- JEDEC-95 Code :
- TO-247AD
- Brand :
- IXYS
- Supplier Device Package :
- TO-247 (IXTH)
- Mounting Type :
- Through Hole
- Transistor Polarity :
- P-Channel
- FET Type :
- P-Channel
- DS Breakdown Voltage-Min :
- 200V
- Surface Mount :
- No
- Avalanche Energy Rating (Eas) :
- 2500 mJ
- Product Type :
- MOSFET
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation-Max (Abs) :
- 568 W
- Pulsed Drain Current-Max (IDM) :
- 200A
- Factory Lead Time :
- 28 Weeks
- Terminal Form :
- THROUGH-HOLE
- Product Status :
- Active
- Polarity/Channel Type :
- P-Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 33400pF @ 25V
- RoHS :
- Details
- Gate Charge (Qg) (Max) @ Vgs :
- 380nC @ 10V
- Maximum Operating Temperature :
- + 150 C
- Power Dissipation (Max) :
- 568W (Tc)
- JESD-30 Code :
- R-PSFM-T3
- Package / Case :
- TO-247-3
- Series :
- TrenchP™
- Case Connection :
- DRAIN
- Mounting Style :
- Through Hole
- Vgs (Max) :
- ±15V
- Drain to Source Voltage (Vdss) :
- 200V
- Number of Terminals :
- 3
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Reach Compliance Code :
- Compliant
- Operating Mode :
- ENHANCEMENT MODE
- Pin Count :
- 3
- Datasheets
- IXTH68P20T

P-Channel Tube 55m Ω @ 34A, 10V ±15V 33400pF @ 25V 380nC @ 10V 200V TO-247-3
IXTH68P20T Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 2500 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 33400pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 68A.68 A is the drain current of this device, which is the maximum continuous current transistor can carry.Peak drain current for this device is 200A, which is its maximum pulsed drain current.To maintain normal operation, the DS breakdown voltage should be kept above 200V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 200V.Using drive voltage (10V) reduces this device's overall power consumption.
IXTH68P20T Features
the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 68A
based on its rated peak drain current 200A.
a 200V drain to source voltage (Vdss)
IXTH68P20T Applications
There are a lot of IXYS
IXTH68P20T applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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