IXTH67N10

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

25m Ω @ 33.5A, 10V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Pin Count :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation-Max (Abs) :

250 W

Package Shape :

RECTANGULAR

Number of Pins :

3

Channel Mode :

Enhancement

Lead Free :

Lead Free

Surface Mount :

No

Reach Compliance Code :

Compliant

Packaging :

Tube

Vgs(th) (Max) @ Id :

4V @ 4mA

Current Rating :

67A

Number of Elements :

1

Product Type :

MOSFET

Series :

MegaMOS™

Voltage - Rated DC :

100V

Factory Lead Time :

8 Weeks

Brand :

IXYS

Base Product Number :

IXTH67

Mounting Style :

Through Hole

Drain Current-Max (Abs) (ID) :

67 A

Input Capacitance (Ciss) (Max) @ Vds :

4500pF @ 25V

Pbfree Code :

yes

Power Dissipation Ambient-Max :

300 W

Polarity/Channel Type :

N-Channel

Maximum Operating Temperature :

+ 150 C

Published :

2003

Power Dissipation :

300W

FET Type :

N-Channel

Rise Time :

60ns

Supplier Device Package :

TO-247 (IXTH)

Package :

Tube

Pulsed Drain Current-Max (IDM) :

268A

Product Category :

MOSFET

Transistor Type :

1 N-Channel

JEDEC-95 Code :

TO-247AD

Package / Case :

TO-247-3

Gate to Source Voltage (Vgs) :

20V

Transistor Element Material :

SILICON

Length :

16.26 mm

Configuration :

Single

Width :

5.3 mm

Drain to Source Voltage (Vdss) :

100V

Power Dissipation-Max :

300W Tc

Gate Charge (Qg) (Max) @ Vgs :

260nC @ 10V

Product Status :

Not For New Designs

Height :

21.46 mm

Transistor Application :

SWITCHING

Number of Channels :

1 Channel

Mount :

Through Hole

Qualification Status :

Not Qualified

Current - Continuous Drain (Id) @ 25°C :

67A Tc

RoHS Status :

ROHS3 Compliant

Mounting Type :

Through Hole

FET Feature :

--

Drain to Source Breakdown Voltage :

100V

Continuous Drain Current (ID) :

67A

JESD-30 Code :

R-PSFM-T3

Manufacturer :

IXYS

DS Breakdown Voltage-Min :

100 V

Number of Terminations :

3

Terminal Form :

THROUGH-HOLE

RoHS :

Details

Drain-source On Resistance-Max :

0.025 Ω

Element Configuration :

Single

Radiation Hardening :

No

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~150°C TJ

Transistor Polarity :

N-Channel

Power Dissipation (Max) :

300W (Tc)

Minimum Operating Temperature :

- 55 C

ECCN Code :

EAR99

Vgs (Max) :

±20V

Case Connection :

DRAIN

Moisture Sensitivity Level (MSL) :

Not Applicable

Fall Time (Typ) :

30 ns

Number of Terminals :

3

Resistance :

25mOhm

Turn-Off Delay Time :

100 ns

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Position :

Single