IXTH67N10

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Mfr.Part #
IXTH67N10
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 100V 67A TO247
Stock
796
In Stock :
796

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Rds On (Max) @ Id, Vgs :
25m Ω @ 33.5A, 10V
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Pin Count :
3
Drive Voltage (Max Rds On,Min Rds On) :
10V
Power Dissipation-Max (Abs) :
250 W
Package Shape :
RECTANGULAR
Number of Pins :
3
Channel Mode :
Enhancement
Lead Free :
Lead Free
Surface Mount :
No
Reach Compliance Code :
Compliant
Packaging :
Tube
Vgs(th) (Max) @ Id :
4V @ 4mA
Current Rating :
67A
Number of Elements :
1
Product Type :
MOSFET
Series :
MegaMOS™
Voltage - Rated DC :
100V
Factory Lead Time :
8 Weeks
Brand :
IXYS
Base Product Number :
IXTH67
Mounting Style :
Through Hole
Drain Current-Max (Abs) (ID) :
67 A
Input Capacitance (Ciss) (Max) @ Vds :
4500pF @ 25V
Pbfree Code :
yes
Power Dissipation Ambient-Max :
300 W
Polarity/Channel Type :
N-Channel
Maximum Operating Temperature :
+ 150 C
Published :
2003
Power Dissipation :
300W
FET Type :
N-Channel
Rise Time :
60ns
Supplier Device Package :
TO-247 (IXTH)
Package :
Tube
Pulsed Drain Current-Max (IDM) :
268A
Product Category :
MOSFET
Transistor Type :
1 N-Channel
JEDEC-95 Code :
TO-247AD
Package / Case :
TO-247-3
Gate to Source Voltage (Vgs) :
20V
Transistor Element Material :
SILICON
Length :
16.26 mm
Configuration :
Single
Width :
5.3 mm
Drain to Source Voltage (Vdss) :
100V
Power Dissipation-Max :
300W Tc
Gate Charge (Qg) (Max) @ Vgs :
260nC @ 10V
Product Status :
Not For New Designs
Height :
21.46 mm
Transistor Application :
SWITCHING
Number of Channels :
1 Channel
Mount :
Through Hole
Qualification Status :
Not Qualified
Current - Continuous Drain (Id) @ 25°C :
67A Tc
RoHS Status :
ROHS3 Compliant
Mounting Type :
Through Hole
FET Feature :
--
Drain to Source Breakdown Voltage :
100V
Continuous Drain Current (ID) :
67A
JESD-30 Code :
R-PSFM-T3
Manufacturer :
IXYS
DS Breakdown Voltage-Min :
100 V
Number of Terminations :
3
Terminal Form :
THROUGH-HOLE
RoHS :
Details
Drain-source On Resistance-Max :
0.025 Ω
Element Configuration :
Single
Radiation Hardening :
No
Operating Mode :
ENHANCEMENT MODE
Operating Temperature :
-55°C~150°C TJ
Transistor Polarity :
N-Channel
Power Dissipation (Max) :
300W (Tc)
Minimum Operating Temperature :
- 55 C
ECCN Code :
EAR99
Vgs (Max) :
±20V
Case Connection :
DRAIN
Moisture Sensitivity Level (MSL) :
Not Applicable
Fall Time (Typ) :
30 ns
Number of Terminals :
3
Resistance :
25mOhm
Turn-Off Delay Time :
100 ns
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Terminal Position :
Single
Datasheets
IXTH67N10
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTH67N10 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Package / Case:TO-247-3, Number of Channels:1 Channel, Mounting Type:Through Hole, Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, IXTH67N10 pinout, IXTH67N10 datasheet PDF, IXTH67N10 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTH67N10 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTH67N10


N-Channel Tube 25m Ω @ 33.5A, 10V ±20V 4500pF @ 25V 260nC @ 10V 100V TO-247-3

IXTH67N10 Overview


Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 4500pF @ 25V.This device has a continuous drain current (ID) of [67A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=100V, the drain-source breakdown voltage is 100V.A device's drain current is its maximum continuous current, and this device's drain current is 67 A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 100 ns.A maximum pulsed drain current of 268A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 100 V.In order to operate this transistor, a voltage of 100V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IXTH67N10 Features


a continuous drain current (ID) of 67A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 100 ns
based on its rated peak drain current 268A.
a 100V drain to source voltage (Vdss)


IXTH67N10 Applications


There are a lot of IXYS
IXTH67N10 applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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