IXTH67N10

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Mfr.Part #
IXTH67N10
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 100V 67A TO247
Stock
796
In Stock :
796

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Base Product Number :
IXTH67
Number of Terminations :
3
Transistor Polarity :
N-Channel
Case Connection :
DRAIN
Power Dissipation Ambient-Max :
300 W
Mount :
Through Hole
Gate Charge (Qg) (Max) @ Vgs :
260nC @ 10V
Operating Temperature :
-55°C~150°C TJ
Moisture Sensitivity Level (MSL) :
Not Applicable
Drain Current-Max (Abs) (ID) :
67 A
Input Capacitance (Ciss) (Max) @ Vds :
4500pF @ 25V
Reach Compliance Code :
Compliant
Drive Voltage (Max Rds On,Min Rds On) :
10V
Terminal Form :
THROUGH-HOLE
Transistor Application :
SWITCHING
Current - Continuous Drain (Id) @ 25°C :
67A Tc
Mounting Type :
Through Hole
Package :
Tube
Vgs (Max) :
±20V
Packaging :
Tube
Rds On (Max) @ Id, Vgs :
25m Ω @ 33.5A, 10V
Pin Count :
3
Product Type :
MOSFET
Pulsed Drain Current-Max (IDM) :
268A
Continuous Drain Current (ID) :
67A
Brand :
IXYS
Current Rating :
67A
Element Configuration :
Single
Drain to Source Breakdown Voltage :
100V
Series :
MegaMOS™
FET Type :
N-Channel
Maximum Operating Temperature :
+ 150 C
Configuration :
Single
Product Status :
Not For New Designs
Channel Mode :
Enhancement
RoHS :
Details
FET Feature :
--
JEDEC-95 Code :
TO-247AD
Terminal Position :
Single
Radiation Hardening :
No
Vgs(th) (Max) @ Id :
4V @ 4mA
Power Dissipation (Max) :
300W (Tc)
Transistor Element Material :
SILICON
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Number of Pins :
3
Mounting Style :
Through Hole
Drain-source On Resistance-Max :
0.025 Ω
DS Breakdown Voltage-Min :
100 V
Published :
2003
Fall Time (Typ) :
30 ns
Polarity/Channel Type :
N-Channel
Pbfree Code :
yes
Minimum Operating Temperature :
- 55 C
Lead Free :
Lead Free
Surface Mount :
No
Number of Elements :
1
Rise Time :
60ns
Voltage - Rated DC :
100V
Transistor Type :
1 N-Channel
Height :
21.46 mm
Manufacturer :
IXYS
Supplier Device Package :
TO-247 (IXTH)
Power Dissipation-Max :
300W Tc
ECCN Code :
EAR99
Factory Lead Time :
8 Weeks
Length :
16.26 mm
Operating Mode :
ENHANCEMENT MODE
Product Category :
MOSFET
Power Dissipation :
300W
Width :
5.3 mm
Power Dissipation-Max (Abs) :
250 W
JESD-30 Code :
R-PSFM-T3
Resistance :
25mOhm
Drain to Source Voltage (Vdss) :
100V
Turn-Off Delay Time :
100 ns
Package / Case :
TO-247-3
FET Technology :
METAL-OXIDE SEMICONDUCTOR
RoHS Status :
ROHS3 Compliant
Gate to Source Voltage (Vgs) :
20V
Package Shape :
RECTANGULAR
Qualification Status :
Not Qualified
Number of Terminals :
3
Number of Channels :
1 Channel
Datasheets
IXTH67N10
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTH67N10 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Number of Pins:3, Package / Case:TO-247-3, Number of Channels:1 Channel, IXTH67N10 pinout, IXTH67N10 datasheet PDF, IXTH67N10 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTH67N10 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTH67N10


N-Channel Tube 25m Ω @ 33.5A, 10V ±20V 4500pF @ 25V 260nC @ 10V 100V TO-247-3

IXTH67N10 Overview


Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 4500pF @ 25V.This device has a continuous drain current (ID) of [67A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=100V, the drain-source breakdown voltage is 100V.A device's drain current is its maximum continuous current, and this device's drain current is 67 A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 100 ns.A maximum pulsed drain current of 268A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 100 V.In order to operate this transistor, a voltage of 100V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IXTH67N10 Features


a continuous drain current (ID) of 67A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 100 ns
based on its rated peak drain current 268A.
a 100V drain to source voltage (Vdss)


IXTH67N10 Applications


There are a lot of IXYS
IXTH67N10 applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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