IXTH67N10

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Mfr.Part #
IXTH67N10
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 100V 67A TO247
Stock
796
In Stock :
796

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Number of Pins :
3
Vgs (Max) :
±20V
Fall Time (Typ) :
30 ns
Polarity/Channel Type :
N-Channel
Manufacturer :
IXYS
Current Rating :
67A
Reach Compliance Code :
Compliant
Number of Terminations :
3
Radiation Hardening :
No
Voltage - Rated DC :
100V
Package :
Tube
Pbfree Code :
yes
Product Type :
MOSFET
ECCN Code :
EAR99
Terminal Position :
Single
Mounting Type :
Through Hole
Surface Mount :
No
Height :
21.46 mm
Brand :
IXYS
Rise Time :
60ns
Drain Current-Max (Abs) (ID) :
67 A
Drive Voltage (Max Rds On,Min Rds On) :
10V
Gate Charge (Qg) (Max) @ Vgs :
260nC @ 10V
FET Feature :
--
Element Configuration :
Single
RoHS Status :
ROHS3 Compliant
JESD-30 Code :
R-PSFM-T3
Maximum Operating Temperature :
+ 150 C
Series :
MegaMOS™
Qualification Status :
Not Qualified
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs) :
250 W
Packaging :
Tube
Number of Channels :
1 Channel
Drain to Source Voltage (Vdss) :
100V
Mount :
Through Hole
Factory Lead Time :
8 Weeks
Published :
2003
Power Dissipation Ambient-Max :
300 W
Lead Free :
Lead Free
Drain-source On Resistance-Max :
0.025 Ω
Terminal Form :
THROUGH-HOLE
Operating Mode :
ENHANCEMENT MODE
Product Status :
Not For New Designs
Width :
5.3 mm
Transistor Type :
1 N-Channel
Transistor Element Material :
SILICON
Pin Count :
3
Resistance :
25mOhm
JEDEC-95 Code :
TO-247AD
Operating Temperature :
-55°C~150°C TJ
Rds On (Max) @ Id, Vgs :
25m Ω @ 33.5A, 10V
Vgs(th) (Max) @ Id :
4V @ 4mA
Transistor Polarity :
N-Channel
Transistor Application :
SWITCHING
Power Dissipation (Max) :
300W (Tc)
FET Type :
N-Channel
Number of Terminals :
3
Channel Mode :
Enhancement
Package Shape :
RECTANGULAR
Power Dissipation-Max :
300W Tc
Drain to Source Breakdown Voltage :
100V
Current - Continuous Drain (Id) @ 25°C :
67A Tc
Minimum Operating Temperature :
- 55 C
Case Connection :
DRAIN
Moisture Sensitivity Level (MSL) :
Not Applicable
Input Capacitance (Ciss) (Max) @ Vds :
4500pF @ 25V
Supplier Device Package :
TO-247 (IXTH)
Number of Elements :
1
Continuous Drain Current (ID) :
67A
Power Dissipation :
300W
Length :
16.26 mm
Turn-Off Delay Time :
100 ns
Base Product Number :
IXTH67
Package / Case :
TO-247-3
DS Breakdown Voltage-Min :
100 V
Gate to Source Voltage (Vgs) :
20V
Pulsed Drain Current-Max (IDM) :
268A
Product Category :
MOSFET
Configuration :
Single
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Mounting Style :
Through Hole
RoHS :
Details
Datasheets
IXTH67N10
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTH67N10 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Number of Terminations:3, Mounting Type:Through Hole, Number of Channels:1 Channel, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-247-3, IXTH67N10 pinout, IXTH67N10 datasheet PDF, IXTH67N10 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTH67N10 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTH67N10


N-Channel Tube 25m Ω @ 33.5A, 10V ±20V 4500pF @ 25V 260nC @ 10V 100V TO-247-3

IXTH67N10 Overview


Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 4500pF @ 25V.This device has a continuous drain current (ID) of [67A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=100V, the drain-source breakdown voltage is 100V.A device's drain current is its maximum continuous current, and this device's drain current is 67 A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 100 ns.A maximum pulsed drain current of 268A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 100 V.In order to operate this transistor, a voltage of 100V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IXTH67N10 Features


a continuous drain current (ID) of 67A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 100 ns
based on its rated peak drain current 268A.
a 100V drain to source voltage (Vdss)


IXTH67N10 Applications


There are a lot of IXYS
IXTH67N10 applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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