IXTH60N25

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Mfr.Part #
IXTH60N25
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 250V 60A TO247
Stock
19,634
In Stock :
19,634

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Terminal Form :
THROUGH-HOLE
Rise Time :
23ns
FET Feature :
--
Transistor Type :
1 N-Channel
Power Dissipation-Max :
400W Tc
Maximum Operating Temperature :
+ 150 C
Subcategory :
MOSFETs
Packaging :
Tube
Number of Elements :
1
Supplier Device Package :
TO-247 (IXTH)
Fall Time (Typ) :
17 ns
Power Dissipation (Max) :
400W (Tc)
Current - Continuous Drain (Id) @ 25°C :
60A Tc
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Surface Mount :
No
FET Type :
N-Channel
Operating Temperature :
-55°C~150°C TJ
Pin Count :
3
Terminal Position :
Single
Qualification Status :
Not Qualified
JEDEC-95 Code :
TO-247AD
Height :
21.46 mm
Number of Terminations :
3
Reach Compliance Code :
Compliant
Drain to Source Breakdown Voltage :
250V
Input Capacitance (Ciss) (Max) @ Vds :
4400pF @ 25V
Pulsed Drain Current-Max (IDM) :
240A
Series :
--
Width :
5.3 mm
Vgs (Max) :
±20V
ECCN Code :
EAR99
Polarity/Channel Type :
N-Channel
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Product Status :
Active
Element Configuration :
Single
Drain-source On Resistance-Max :
0.046Ohm
Transistor Polarity :
N-Channel
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
RoHS :
Details
Channel Mode :
Enhancement
Brand :
IXYS
RoHS Status :
ROHS3 Compliant
JESD-30 Code :
R-PSFM-T3
Manufacturer :
IXYS
Configuration :
Single
Gate to Source Voltage (Vgs) :
20V
Pbfree Code :
yes
Mounting Style :
Through Hole
Turn-Off Delay Time :
60 ns
Case Connection :
DRAIN
Number of Pins :
3
Avalanche Energy Rating (Eas) :
1500 mJ
Transistor Application :
SWITCHING
Base Product Number :
IXTH60
Mount :
Through Hole
Published :
2003
DS Breakdown Voltage-Min :
250 V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Product Type :
MOSFET
Package / Case :
TO-247-3
Length :
16.26 mm
Minimum Operating Temperature :
- 55 C
Vgs(th) (Max) @ Id :
4V @ 250µA
Transistor Element Material :
SILICON
Continuous Drain Current (ID) :
60A
Rds On (Max) @ Id, Vgs :
46m Ω @ 15A, 10V
Package Shape :
RECTANGULAR
Product Category :
MOSFET
Number of Channels :
1 Channel
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Operating Mode :
ENHANCEMENT MODE
Mounting Type :
Through Hole
Package :
Tube
Drain to Source Voltage (Vdss) :
250V
Power Dissipation :
400W
Number of Terminals :
3
Gate Charge (Qg) (Max) @ Vgs :
164nC @ 10V
Datasheets
IXTH60N25
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTH60N25 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, Number of Pins:3, Package / Case:TO-247-3, Number of Channels:1 Channel, Mounting Type:Through Hole, IXTH60N25 pinout, IXTH60N25 datasheet PDF, IXTH60N25 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTH60N25 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTH60N25


N-Channel Tube 46m Ω @ 15A, 10V ±20V 4400pF @ 25V 164nC @ 10V 250V TO-247-3

IXTH60N25 Overview


This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 1500 mJ.The maximum input capacitance of this device is 4400pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 60A.When VGS=250V, and ID flows to VDS at 250VVDS, the drain-source breakdown voltage is 250V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 60 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 240A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 250 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 250V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

IXTH60N25 Features


the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 60A
a drain-to-source breakdown voltage of 250V voltage
the turn-off delay time is 60 ns
based on its rated peak drain current 240A.
a 250V drain to source voltage (Vdss)


IXTH60N25 Applications


There are a lot of IXYS
IXTH60N25 applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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