IXTH60N25
- Mfr.Part #
- IXTH60N25
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 250V 60A TO247
- Stock
- 19,634
- In Stock :
- 19,634
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Terminal Form :
- THROUGH-HOLE
- Rise Time :
- 23ns
- FET Feature :
- --
- Transistor Type :
- 1 N-Channel
- Power Dissipation-Max :
- 400W Tc
- Maximum Operating Temperature :
- + 150 C
- Subcategory :
- MOSFETs
- Packaging :
- Tube
- Number of Elements :
- 1
- Supplier Device Package :
- TO-247 (IXTH)
- Fall Time (Typ) :
- 17 ns
- Power Dissipation (Max) :
- 400W (Tc)
- Current - Continuous Drain (Id) @ 25°C :
- 60A Tc
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Surface Mount :
- No
- FET Type :
- N-Channel
- Operating Temperature :
- -55°C~150°C TJ
- Pin Count :
- 3
- Terminal Position :
- Single
- Qualification Status :
- Not Qualified
- JEDEC-95 Code :
- TO-247AD
- Height :
- 21.46 mm
- Number of Terminations :
- 3
- Reach Compliance Code :
- Compliant
- Drain to Source Breakdown Voltage :
- 250V
- Input Capacitance (Ciss) (Max) @ Vds :
- 4400pF @ 25V
- Pulsed Drain Current-Max (IDM) :
- 240A
- Series :
- --
- Width :
- 5.3 mm
- Vgs (Max) :
- ±20V
- ECCN Code :
- EAR99
- Polarity/Channel Type :
- N-Channel
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Product Status :
- Active
- Element Configuration :
- Single
- Drain-source On Resistance-Max :
- 0.046Ohm
- Transistor Polarity :
- N-Channel
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- RoHS :
- Details
- Channel Mode :
- Enhancement
- Brand :
- IXYS
- RoHS Status :
- ROHS3 Compliant
- JESD-30 Code :
- R-PSFM-T3
- Manufacturer :
- IXYS
- Configuration :
- Single
- Gate to Source Voltage (Vgs) :
- 20V
- Pbfree Code :
- yes
- Mounting Style :
- Through Hole
- Turn-Off Delay Time :
- 60 ns
- Case Connection :
- DRAIN
- Number of Pins :
- 3
- Avalanche Energy Rating (Eas) :
- 1500 mJ
- Transistor Application :
- SWITCHING
- Base Product Number :
- IXTH60
- Mount :
- Through Hole
- Published :
- 2003
- DS Breakdown Voltage-Min :
- 250 V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Product Type :
- MOSFET
- Package / Case :
- TO-247-3
- Length :
- 16.26 mm
- Minimum Operating Temperature :
- - 55 C
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Transistor Element Material :
- SILICON
- Continuous Drain Current (ID) :
- 60A
- Rds On (Max) @ Id, Vgs :
- 46m Ω @ 15A, 10V
- Package Shape :
- RECTANGULAR
- Product Category :
- MOSFET
- Number of Channels :
- 1 Channel
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Operating Mode :
- ENHANCEMENT MODE
- Mounting Type :
- Through Hole
- Package :
- Tube
- Drain to Source Voltage (Vdss) :
- 250V
- Power Dissipation :
- 400W
- Number of Terminals :
- 3
- Gate Charge (Qg) (Max) @ Vgs :
- 164nC @ 10V
- Datasheets
- IXTH60N25
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N-Channel Tube 46m Ω @ 15A, 10V ±20V 4400pF @ 25V 164nC @ 10V 250V TO-247-3
IXTH60N25 Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 1500 mJ.The maximum input capacitance of this device is 4400pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 60A.When VGS=250V, and ID flows to VDS at 250VVDS, the drain-source breakdown voltage is 250V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 60 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 240A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 250 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 250V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IXTH60N25 Features
the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 60A
a drain-to-source breakdown voltage of 250V voltage
the turn-off delay time is 60 ns
based on its rated peak drain current 240A.
a 250V drain to source voltage (Vdss)
IXTH60N25 Applications
There are a lot of IXYS
IXTH60N25 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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