IXTH60N15

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Through Hole

Vgs (Max) :

±20V

Rise Time :

20ns

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Configuration :

Single

Transistor Element Material :

SILICON

Surface Mount :

No

Supplier Device Package :

TO-247 (IXTH)

Number of Elements :

1

Mounting Style :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mount :

Through Hole

Transistor Polarity :

N-Channel

Reach Compliance Code :

Compliant

Transistor Type :

1 N-Channel

Terminal Position :

Single

JEDEC-95 Code :

TO-247AD

Pulsed Drain Current-Max (IDM) :

240A

Packaging :

Tube

Current - Continuous Drain (Id) @ 25°C :

60A Tc

Rds On (Max) @ Id, Vgs :

33m Ω @ 15A, 10V

Number of Terminals :

3

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Transistor Application :

SWITCHING

Width :

5.3 mm

Package :

Tube

Drain to Source Breakdown Voltage :

150V

DS Breakdown Voltage-Min :

150 V

Maximum Operating Temperature :

+ 150 C

Minimum Operating Temperature :

- 55 C

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Polarity/Channel Type :

N-Channel

Subcategory :

MOSFETs

Max Power Dissipation :

275 W

Power Dissipation-Max :

275W Tc

Turn-Off Delay Time :

85 ns

Pin Count :

3

Min Operating Temperature :

-55 °C

FET Feature :

--

Number of Pins :

3

Number of Terminations :

3

Channel Mode :

Enhancement

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Element Configuration :

Single

Power Dissipation (Max) :

275W (Tc)

Max Operating Temperature :

150 °C

Package / Case :

TO-247-3

RoHS Status :

ROHS3 Compliant

Gate to Source Voltage (Vgs) :

20V

Brand :

IXYS

Input Capacitance (Ciss) (Max) @ Vds :

3000pF @ 25V

Height :

21.46 mm

Rds On Max :

33 mΩ

Qualification Status :

Not Qualified

Operating Mode :

ENHANCEMENT MODE

Package Shape :

RECTANGULAR

Pbfree Code :

yes

Product Category :

MOSFET

Drain to Source Resistance :

33 mΩ

Case Connection :

DRAIN

RoHS :

Details

JESD-30 Code :

R-PSFM-T3

Drain-source On Resistance-Max :

0.033 Ω

Operating Temperature :

-55°C~150°C TJ

FET Type :

N-Channel

Series :

--

Number of Channels :

1 Channel

Terminal Form :

THROUGH-HOLE

Manufacturer :

IXYS

Input Capacitance :

3 nF

Base Product Number :

IXTH60

Continuous Drain Current (ID) :

60A

Drain to Source Voltage (Vdss) :

150V

Published :

2003

Length :

16.26 mm

Product Status :

Active

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Product Type :

MOSFET

Avalanche Energy Rating (Eas) :

1000 mJ

Fall Time (Typ) :

18 ns

Vgs(th) (Max) @ Id :

4V @ 250µA

Power Dissipation :

275W