IXTH60N10
- Mfr.Part #
- IXTH60N10
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 60A TO247
- Stock
- 35,867
- In Stock :
- 35,867
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Supplier Device Package :
- TO-247 (IXTH)
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Subcategory :
- MOSFETs
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Number of Elements :
- 1
- Avalanche Energy Rating (Eas) :
- 1500 mJ
- Rds On (Max) @ Id, Vgs :
- 20m Ω @ 30A, 10V
- Product Status :
- Active
- Channel Mode :
- Enhancement
- Package :
- Tube
- Surface Mount :
- No
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- ECCN Code :
- EAR99
- Turn-Off Delay Time :
- 70 ns
- Product Type :
- MOSFET
- Package / Case :
- TO-247-3
- Drain to Source Breakdown Voltage :
- 100V
- Continuous Drain Current (ID) :
- 60A
- Number of Terminations :
- 3
- Vgs (Max) :
- ±20V
- Number of Terminals :
- 3
- Operating Mode :
- ENHANCEMENT MODE
- Fall Time (Typ) :
- 18 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 3200pF @ 25V
- Gate Charge (Qg) (Max) @ Vgs :
- 110nC @ 10V
- FET Type :
- N-Channel
- DS Breakdown Voltage-Min :
- 100 V
- Reach Compliance Code :
- Compliant
- Mount :
- Through Hole
- RoHS Status :
- ROHS3 Compliant
- Transistor Type :
- 1 N-Channel
- Pbfree Code :
- yes
- Pin Count :
- 3
- Rise Time :
- 20ns
- Operating Temperature :
- -55°C~150°C TJ
- Brand :
- IXYS
- JESD-30 Code :
- R-PSFM-T3
- Package Shape :
- RECTANGULAR
- Base Product Number :
- IXTH60
- Pulsed Drain Current-Max (IDM) :
- 320 A
- Transistor Application :
- SWITCHING
- Terminal Form :
- THROUGH-HOLE
- Terminal Position :
- Single
- Number of Pins :
- 3
- Packaging :
- Tube
- Series :
- --
- Mounting Type :
- Through Hole
- Element Configuration :
- Single
- Gate to Source Voltage (Vgs) :
- 20V
- Transistor Element Material :
- SILICON
- Manufacturer :
- IXYS
- Polarity/Channel Type :
- N-Channel
- Published :
- 2003
- Power Dissipation-Max :
- 300W Tc
- Length :
- 16.26 mm
- Number of Channels :
- 1 Channel
- Product Category :
- MOSFET
- RoHS :
- Details
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Configuration :
- Single
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- Through Hole
- Maximum Operating Temperature :
- + 150 C
- JEDEC-95 Code :
- TO-247AD
- Drain-source On Resistance-Max :
- 0.02Ohm
- Height :
- 21.46 mm
- Case Connection :
- DRAIN
- Transistor Polarity :
- N-Channel
- Power Dissipation :
- 300W
- FET Feature :
- --
- Drain to Source Voltage (Vdss) :
- 100V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Qualification Status :
- Not Qualified
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Width :
- 5.3 mm
- Power Dissipation (Max) :
- 300W (Tc)
- Current - Continuous Drain (Id) @ 25°C :
- 60A Tc
- Drain Current-Max (Abs) (ID) :
- 80A
- Datasheets
- IXTH60N10
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N-Channel Tube 20m Ω @ 30A, 10V ±20V 3200pF @ 25V 110nC @ 10V 100V TO-247-3
IXTH60N10 Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 1500 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 3200pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 60A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=100V. And this device has 100V drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 80A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 70 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 320 A.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 100 V in order to maintain normal operation.Operating this transistor requires a 100V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IXTH60N10 Features
the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 60A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 70 ns
based on its rated peak drain current 320 A.
a 100V drain to source voltage (Vdss)
IXTH60N10 Applications
There are a lot of IXYS
IXTH60N10 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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