IXTH60N10

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Mfr.Part #
IXTH60N10
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 100V 60A TO247
Stock
35,867
In Stock :
35,867

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Supplier Device Package :
TO-247 (IXTH)
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Subcategory :
MOSFETs
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Number of Elements :
1
Avalanche Energy Rating (Eas) :
1500 mJ
Rds On (Max) @ Id, Vgs :
20m Ω @ 30A, 10V
Product Status :
Active
Channel Mode :
Enhancement
Package :
Tube
Surface Mount :
No
Vgs(th) (Max) @ Id :
4V @ 250µA
ECCN Code :
EAR99
Turn-Off Delay Time :
70 ns
Product Type :
MOSFET
Package / Case :
TO-247-3
Drain to Source Breakdown Voltage :
100V
Continuous Drain Current (ID) :
60A
Number of Terminations :
3
Vgs (Max) :
±20V
Number of Terminals :
3
Operating Mode :
ENHANCEMENT MODE
Fall Time (Typ) :
18 ns
Input Capacitance (Ciss) (Max) @ Vds :
3200pF @ 25V
Gate Charge (Qg) (Max) @ Vgs :
110nC @ 10V
FET Type :
N-Channel
DS Breakdown Voltage-Min :
100 V
Reach Compliance Code :
Compliant
Mount :
Through Hole
RoHS Status :
ROHS3 Compliant
Transistor Type :
1 N-Channel
Pbfree Code :
yes
Pin Count :
3
Rise Time :
20ns
Operating Temperature :
-55°C~150°C TJ
Brand :
IXYS
JESD-30 Code :
R-PSFM-T3
Package Shape :
RECTANGULAR
Base Product Number :
IXTH60
Pulsed Drain Current-Max (IDM) :
320 A
Transistor Application :
SWITCHING
Terminal Form :
THROUGH-HOLE
Terminal Position :
Single
Number of Pins :
3
Packaging :
Tube
Series :
--
Mounting Type :
Through Hole
Element Configuration :
Single
Gate to Source Voltage (Vgs) :
20V
Transistor Element Material :
SILICON
Manufacturer :
IXYS
Polarity/Channel Type :
N-Channel
Published :
2003
Power Dissipation-Max :
300W Tc
Length :
16.26 mm
Number of Channels :
1 Channel
Product Category :
MOSFET
RoHS :
Details
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Configuration :
Single
Minimum Operating Temperature :
- 55 C
Mounting Style :
Through Hole
Maximum Operating Temperature :
+ 150 C
JEDEC-95 Code :
TO-247AD
Drain-source On Resistance-Max :
0.02Ohm
Height :
21.46 mm
Case Connection :
DRAIN
Transistor Polarity :
N-Channel
Power Dissipation :
300W
FET Feature :
--
Drain to Source Voltage (Vdss) :
100V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Qualification Status :
Not Qualified
Drive Voltage (Max Rds On,Min Rds On) :
10V
Width :
5.3 mm
Power Dissipation (Max) :
300W (Tc)
Current - Continuous Drain (Id) @ 25°C :
60A Tc
Drain Current-Max (Abs) (ID) :
80A
Datasheets
IXTH60N10
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTH60N10 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-247-3, Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, Number of Pins:3, Mounting Type:Through Hole, Number of Channels:1 Channel, IXTH60N10 pinout, IXTH60N10 datasheet PDF, IXTH60N10 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTH60N10 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTH60N10


N-Channel Tube 20m Ω @ 30A, 10V ±20V 3200pF @ 25V 110nC @ 10V 100V TO-247-3

IXTH60N10 Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 1500 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 3200pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 60A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=100V. And this device has 100V drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 80A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 70 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 320 A.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 100 V in order to maintain normal operation.Operating this transistor requires a 100V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

IXTH60N10 Features


the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 60A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 70 ns
based on its rated peak drain current 320 A.
a 100V drain to source voltage (Vdss)


IXTH60N10 Applications


There are a lot of IXYS
IXTH60N10 applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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