IXTH5N100A

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Mfr.Part #
IXTH5N100A
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 1000V 5A TO247
Stock
30,274
In Stock :
30,274

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Fall Time (Typ) :
30 ns
Transistor Element Material :
SILICON
Base Product Number :
IXTH5
Number of Pins :
3
DS Breakdown Voltage-Min :
1000 V
Lead Free :
Lead Free
FET Type :
N-Channel
Power Dissipation (Max) :
180W (Tc)
Package / Case :
TO-247-3
Gate Charge (Qg) (Max) @ Vgs :
130nC @ 10V
JEDEC-95 Code :
TO-247AD
Surface Mount :
No
Power Dissipation :
180W
Number of Terminals :
3
Power Dissipation Ambient-Max :
180 W
Continuous Drain Current (ID) :
5A
Series :
--
Rise Time :
20ns
Number of Channels :
1 Channel
Transistor Application :
SWITCHING
Number of Terminations :
3
Transistor Polarity :
N-Channel
Qualification Status :
Not Qualified
Drive Voltage (Max Rds On,Min Rds On) :
10V
Manufacturer :
IXYS
Vgs(th) (Max) @ Id :
4.5V @ 250μA
Terminal Position :
Single
Packaging :
Tube
Operating Mode :
ENHANCEMENT MODE
Minimum Operating Temperature :
- 55 C
Supplier Device Package :
TO-247 (IXTH)
Power Dissipation-Max :
180W Tc
Package Shape :
RECTANGULAR
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Mounting Style :
Through Hole
Package :
Tube
Drain to Source Voltage (Vdss) :
1000V
Mounting Type :
Through Hole
Vgs (Max) :
±20V
Current - Continuous Drain (Id) @ 25°C :
5A Tc
RoHS :
Details
Power Dissipation-Max (Abs) :
150 W
Radiation Hardening :
No
Reach Compliance Code :
Compliant
Gate to Source Voltage (Vgs) :
20V
Configuration :
Single
Mount :
Through Hole
Maximum Operating Temperature :
+ 150 C
JESD-30 Code :
R-PSFM-T3
Transistor Type :
1 N-Channel
Turn-Off Delay Time :
100 ns
Polarity/Channel Type :
N-Channel
Drain to Source Breakdown Voltage :
1kV
Voltage - Rated DC :
1kV
Published :
2000
Length :
16.26 mm
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Height :
21.46 mm
Brand :
IXYS
Product Status :
Active
Case Connection :
DRAIN
Drain-source On Resistance-Max :
2 Ω
Input Capacitance (Ciss) (Max) @ Vds :
2600pF @ 25V
Product Type :
MOSFET
FET Feature :
--
Width :
5.3 mm
Rds On (Max) @ Id, Vgs :
2 Ω @ 2.5A, 10V
Current Rating :
5A
Product Category :
MOSFET
Element Configuration :
Single
Drain Current-Max (Abs) (ID) :
5A
Operating Temperature :
-55°C~150°C TJ
Factory Lead Time :
28 Weeks
Terminal Form :
THROUGH-HOLE
Resistance :
2.4Ohm
RoHS Status :
ROHS3 Compliant
Pbfree Code :
yes
Number of Elements :
1
Pulsed Drain Current-Max (IDM) :
20A
Pin Count :
3
Channel Mode :
Enhancement
Datasheets
IXTH5N100A
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTH5N100A from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Package / Case:TO-247-3, Number of Channels:1 Channel, Number of Terminations:3, Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, IXTH5N100A pinout, IXTH5N100A datasheet PDF, IXTH5N100A amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTH5N100A ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTH5N100A


N-Channel Tube 2 Ω @ 2.5A, 10V ±20V 2600pF @ 25V 130nC @ 10V 1000V TO-247-3

IXTH5N100A Overview


An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 2600pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 5A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 1kV, and this device has a drainage-to-source breakdown voltage of 1kVV.Drain current refers to the maximum continuous current a device can conduct, and it is 5A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 100 ns.Peak drain current is 20A, which is the maximum pulsed drain current.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Normal operation requires that the DS breakdown voltage remain above 1000 V.For this transistor to work, a voltage 1000V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

IXTH5N100A Features


a continuous drain current (ID) of 5A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 100 ns
based on its rated peak drain current 20A.
a 1000V drain to source voltage (Vdss)


IXTH5N100A Applications


There are a lot of IXYS
IXTH5N100A applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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