IXTH52P10P
- Mfr.Part #
- IXTH52P10P
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET P-CH 100V 52A TO247
- Stock
- 35,336
- In Stock :
- 35,336
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mount :
- Through Hole
- Manufacturer :
- IXYS
- JESD-609 Code :
- e1
- Transistor Type :
- 1 P-Channel
- Pulsed Drain Current-Max (IDM) :
- 130A
- Case Connection :
- DRAIN
- Height :
- 21.46 mm
- RoHS Status :
- ROHS3 Compliant
- Pin Count :
- 3
- Factory Lead Time :
- 28 Weeks
- Published :
- 2008
- Gate Charge (Qg) (Max) @ Vgs :
- 60nC @ 10V
- Packaging :
- Tube
- Current - Continuous Drain (Id) @ 25°C :
- 52A Tc
- Configuration :
- Single
- Tradename :
- PolarP
- Brand :
- IXYS
- Operating Temperature :
- -55°C~150°C TJ
- Reach Compliance Code :
- not_compliant
- Transistor Polarity :
- P-Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 2845pF @ 25V
- Element Configuration :
- Single
- RoHS :
- Details
- Length :
- 16.26 mm
- Vgs (Max) :
- ±20V
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- Package / Case :
- TO-247-3
- Power Dissipation-Max :
- 300W Tc
- JESD-30 Code :
- R-PSFM-T3
- Avalanche Energy Rating (Eas) :
- 1500 mJ
- Pbfree Code :
- yes
- Supplier Device Package :
- TO-247 (IXTH)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rds On (Max) @ Id, Vgs :
- 50m Ω @ 500mA, 10V
- Rise Time :
- 29ns
- Channel Mode :
- Enhancement
- Transistor Application :
- SWITCHING
- Turn-Off Delay Time :
- 38 ns
- Maximum Operating Temperature :
- + 150 C
- Qualification Status :
- Not Qualified
- Product Type :
- MOSFET
- Lead Free :
- Lead Free
- Product Status :
- Active
- Gate to Source Voltage (Vgs) :
- 20V
- Package :
- Tube
- Number of Terminations :
- 3
- Drain to Source Voltage (Vdss) :
- 100V
- Power Dissipation (Max) :
- 300W (Tc)
- Additional Feature :
- AVALANCHE RATED
- Number of Channels :
- 1 Channel
- Minimum Operating Temperature :
- - 55 C
- Type :
- PolarP Power MOSFET
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Elements :
- 1
- FET Type :
- P-Channel
- Series :
- PolarP™
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Resistance :
- 50mOhm
- Mounting Type :
- Through Hole
- Fall Time (Typ) :
- 22 ns
- Drain to Source Breakdown Voltage :
- -100V
- Width :
- 5.3 mm
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Product Category :
- MOSFET
- Base Product Number :
- IXTH52
- Power Dissipation :
- 300W
- Mounting Style :
- Through Hole
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- FET Feature :
- --
- Continuous Drain Current (ID) :
- 52A
- Operating Mode :
- ENHANCEMENT MODE
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Datasheets
- IXTH52P10P
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P-Channel Tube 50m Ω @ 500mA, 10V ±20V 2845pF @ 25V 60nC @ 10V 100V TO-247-3
IXTH52P10P Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 1500 mJ.The maximum input capacitance of this device is 2845pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 52A.When VGS=-100V, and ID flows to VDS at -100VVDS, the drain-source breakdown voltage is -100V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 38 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 130A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.The drain-to-source voltage (Vdss) of this transistor needs to be at 100V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IXTH52P10P Features
the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 52A
a drain-to-source breakdown voltage of -100V voltage
the turn-off delay time is 38 ns
based on its rated peak drain current 130A.
a 100V drain to source voltage (Vdss)
IXTH52P10P Applications
There are a lot of IXYS
IXTH52P10P applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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