IXTH52P10P

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Mfr.Part #
IXTH52P10P
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET P-CH 100V 52A TO247
Stock
35,336
In Stock :
35,336

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Mount :
Through Hole
Manufacturer :
IXYS
JESD-609 Code :
e1
Transistor Type :
1 P-Channel
Pulsed Drain Current-Max (IDM) :
130A
Case Connection :
DRAIN
Height :
21.46 mm
RoHS Status :
ROHS3 Compliant
Pin Count :
3
Factory Lead Time :
28 Weeks
Published :
2008
Gate Charge (Qg) (Max) @ Vgs :
60nC @ 10V
Packaging :
Tube
Current - Continuous Drain (Id) @ 25°C :
52A Tc
Configuration :
Single
Tradename :
PolarP
Brand :
IXYS
Operating Temperature :
-55°C~150°C TJ
Reach Compliance Code :
not_compliant
Transistor Polarity :
P-Channel
Input Capacitance (Ciss) (Max) @ Vds :
2845pF @ 25V
Element Configuration :
Single
RoHS :
Details
Length :
16.26 mm
Vgs (Max) :
±20V
Transistor Element Material :
SILICON
ECCN Code :
EAR99
Package / Case :
TO-247-3
Power Dissipation-Max :
300W Tc
JESD-30 Code :
R-PSFM-T3
Avalanche Energy Rating (Eas) :
1500 mJ
Pbfree Code :
yes
Supplier Device Package :
TO-247 (IXTH)
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Rds On (Max) @ Id, Vgs :
50m Ω @ 500mA, 10V
Rise Time :
29ns
Channel Mode :
Enhancement
Transistor Application :
SWITCHING
Turn-Off Delay Time :
38 ns
Maximum Operating Temperature :
+ 150 C
Qualification Status :
Not Qualified
Product Type :
MOSFET
Lead Free :
Lead Free
Product Status :
Active
Gate to Source Voltage (Vgs) :
20V
Package :
Tube
Number of Terminations :
3
Drain to Source Voltage (Vdss) :
100V
Power Dissipation (Max) :
300W (Tc)
Additional Feature :
AVALANCHE RATED
Number of Channels :
1 Channel
Minimum Operating Temperature :
- 55 C
Type :
PolarP Power MOSFET
Drive Voltage (Max Rds On,Min Rds On) :
10V
Number of Elements :
1
FET Type :
P-Channel
Series :
PolarP™
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Resistance :
50mOhm
Mounting Type :
Through Hole
Fall Time (Typ) :
22 ns
Drain to Source Breakdown Voltage :
-100V
Width :
5.3 mm
Vgs(th) (Max) @ Id :
4.5V @ 250μA
Product Category :
MOSFET
Base Product Number :
IXTH52
Power Dissipation :
300W
Mounting Style :
Through Hole
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
FET Feature :
--
Continuous Drain Current (ID) :
52A
Operating Mode :
ENHANCEMENT MODE
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Datasheets
IXTH52P10P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTH52P10P from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Package / Case:TO-247-3, Number of Terminations:3, Number of Channels:1 Channel, Type:PolarP Power MOSFET, Mounting Type:Through Hole, IXTH52P10P pinout, IXTH52P10P datasheet PDF, IXTH52P10P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTH52P10P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTH52P10P


P-Channel Tube 50m Ω @ 500mA, 10V ±20V 2845pF @ 25V 60nC @ 10V 100V TO-247-3

IXTH52P10P Overview


This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 1500 mJ.The maximum input capacitance of this device is 2845pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 52A.When VGS=-100V, and ID flows to VDS at -100VVDS, the drain-source breakdown voltage is -100V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 38 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 130A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.The drain-to-source voltage (Vdss) of this transistor needs to be at 100V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

IXTH52P10P Features


the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 52A
a drain-to-source breakdown voltage of -100V voltage
the turn-off delay time is 38 ns
based on its rated peak drain current 130A.
a 100V drain to source voltage (Vdss)


IXTH52P10P Applications


There are a lot of IXYS
IXTH52P10P applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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