IXTH50N30

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Mfr.Part #
IXTH50N30
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 300V 50A TO247
Stock
16,886
In Stock :
16,886

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Case Connection :
DRAIN
Product Status :
Active
Pin Count :
3
Drain to Source Voltage (Vdss) :
300V
Drain to Source Breakdown Voltage :
300V
Surface Mount :
No
Package / Case :
TO-247-3
Series :
--
FET Type :
N-Channel
Pbfree Code :
yes
Operating Mode :
ENHANCEMENT MODE
Transistor Application :
SWITCHING
Configuration :
SINGLE WITH BUILT-IN DIODE
Element Configuration :
Single
Pulsed Drain Current-Max (IDM) :
200A
Rds On (Max) @ Id, Vgs :
65m Ω @ 25A, 10V
RoHS Status :
ROHS3 Compliant
Drain-source On Resistance-Max :
0.065Ohm
Manufacturer :
IXYS Corporation
Vgs(th) (Max) @ Id :
4V @ 250µA
Continuous Drain Current (ID) :
50A
Turn-Off Delay Time :
70 ns
Qualification Status :
Not Qualified
JEDEC-95 Code :
TO-247AD
Current - Continuous Drain (Id) @ 25°C :
50A Tc
Power Dissipation (Max) :
400W (Tc)
Vgs (Max) :
±30V
Mounting Type :
Through Hole
Avalanche Energy Rating (Eas) :
1500 mJ
Power Dissipation-Max :
400W Tc
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Base Product Number :
IXTH50
Package :
Tube
Packaging :
Tube
Radiation Hardening :
No
Number of Terminals :
3
Terminal Position :
Single
Polarity/Channel Type :
N-Channel
Drive Voltage (Max Rds On,Min Rds On) :
10V
Rise Time :
33ns
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
DS Breakdown Voltage-Min :
300 V
Fall Time (Typ) :
17 ns
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Gate to Source Voltage (Vgs) :
20V
FET Technology :
METAL-OXIDE SEMICONDUCTOR
JESD-609 Code :
e1
Mount :
Through Hole
ECCN Code :
EAR99
Supplier Device Package :
TO-247 (IXTH)
Reach Compliance Code :
Compliant
Gate Charge (Qg) (Max) @ Vgs :
165nC @ 10V
Terminal Form :
THROUGH-HOLE
Operating Temperature :
-55°C~150°C TJ
Published :
2003
FET Feature :
--
JESD-30 Code :
R-PSIP-T3
Package Shape :
RECTANGULAR
Number of Elements :
1
Transistor Element Material :
SILICON
Number of Terminations :
3
Power Dissipation :
400W
Input Capacitance (Ciss) (Max) @ Vds :
4400pF @ 25V
Datasheets
IXTH50N30
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTH50N30 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-247-3, Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, IXTH50N30 pinout, IXTH50N30 datasheet PDF, IXTH50N30 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTH50N30 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTH50N30


N-Channel Tube 65m Ω @ 25A, 10V ±30V 4400pF @ 25V 165nC @ 10V 300V TO-247-3

IXTH50N30 Overview


Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 1500 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 4400pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 50A.With a drain-source breakdown voltage of 300V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 300V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 70 ns.Peak drain current for this device is 200A, which is its maximum pulsed drain current.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 300 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 300V.Using drive voltage (10V) reduces this device's overall power consumption.

IXTH50N30 Features


the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 50A
a drain-to-source breakdown voltage of 300V voltage
the turn-off delay time is 70 ns
based on its rated peak drain current 200A.
a 300V drain to source voltage (Vdss)


IXTH50N30 Applications


There are a lot of IXYS
IXTH50N30 applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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