IXTH50N30
- Mfr.Part #
- IXTH50N30
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 300V 50A TO247
- Stock
- 16,886
- In Stock :
- 16,886
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Case Connection :
- DRAIN
- Product Status :
- Active
- Pin Count :
- 3
- Drain to Source Voltage (Vdss) :
- 300V
- Drain to Source Breakdown Voltage :
- 300V
- Surface Mount :
- No
- Package / Case :
- TO-247-3
- Series :
- --
- FET Type :
- N-Channel
- Pbfree Code :
- yes
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Application :
- SWITCHING
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Element Configuration :
- Single
- Pulsed Drain Current-Max (IDM) :
- 200A
- Rds On (Max) @ Id, Vgs :
- 65m Ω @ 25A, 10V
- RoHS Status :
- ROHS3 Compliant
- Drain-source On Resistance-Max :
- 0.065Ohm
- Manufacturer :
- IXYS Corporation
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Continuous Drain Current (ID) :
- 50A
- Turn-Off Delay Time :
- 70 ns
- Qualification Status :
- Not Qualified
- JEDEC-95 Code :
- TO-247AD
- Current - Continuous Drain (Id) @ 25°C :
- 50A Tc
- Power Dissipation (Max) :
- 400W (Tc)
- Vgs (Max) :
- ±30V
- Mounting Type :
- Through Hole
- Avalanche Energy Rating (Eas) :
- 1500 mJ
- Power Dissipation-Max :
- 400W Tc
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Base Product Number :
- IXTH50
- Package :
- Tube
- Packaging :
- Tube
- Radiation Hardening :
- No
- Number of Terminals :
- 3
- Terminal Position :
- Single
- Polarity/Channel Type :
- N-Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Rise Time :
- 33ns
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- DS Breakdown Voltage-Min :
- 300 V
- Fall Time (Typ) :
- 17 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate to Source Voltage (Vgs) :
- 20V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- JESD-609 Code :
- e1
- Mount :
- Through Hole
- ECCN Code :
- EAR99
- Supplier Device Package :
- TO-247 (IXTH)
- Reach Compliance Code :
- Compliant
- Gate Charge (Qg) (Max) @ Vgs :
- 165nC @ 10V
- Terminal Form :
- THROUGH-HOLE
- Operating Temperature :
- -55°C~150°C TJ
- Published :
- 2003
- FET Feature :
- --
- JESD-30 Code :
- R-PSIP-T3
- Package Shape :
- RECTANGULAR
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 3
- Power Dissipation :
- 400W
- Input Capacitance (Ciss) (Max) @ Vds :
- 4400pF @ 25V
- Datasheets
- IXTH50N30
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N-Channel Tube 65m Ω @ 25A, 10V ±30V 4400pF @ 25V 165nC @ 10V 300V TO-247-3
IXTH50N30 Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 1500 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 4400pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 50A.With a drain-source breakdown voltage of 300V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 300V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 70 ns.Peak drain current for this device is 200A, which is its maximum pulsed drain current.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 300 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 300V.Using drive voltage (10V) reduces this device's overall power consumption.
IXTH50N30 Features
the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 50A
a drain-to-source breakdown voltage of 300V voltage
the turn-off delay time is 70 ns
based on its rated peak drain current 200A.
a 300V drain to source voltage (Vdss)
IXTH50N30 Applications
There are a lot of IXYS
IXTH50N30 applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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