IXTH50N20

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Package Shape :

RECTANGULAR

Threshold Voltage :

4V

Transistor Polarity :

N-Channel

Radiation Hardening :

No

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Element Configuration :

Single

Length :

16.26 mm

Drain to Source Breakdown Voltage :

200V

Case Connection :

DRAIN

Product Type :

MOSFET

Drain-source On Resistance-Max :

0.045 Ω

Number of Pins :

3

FET Type :

N-Channel

Vgs (Max) :

±20V

Minimum Operating Temperature :

- 55 C

Maximum Operating Temperature :

+ 150 C

Terminal Form :

THROUGH-HOLE

Transistor Type :

1 N-Channel

Base Product Number :

IXTH50

Mounting Style :

Through Hole

FET Feature :

--

Mount :

Through Hole

Rise Time :

15ns

Drain Current-Max (Abs) (ID) :

50 A

Voltage - Rated DC :

200V

Number of Channels :

1 Channel

DS Breakdown Voltage-Min :

200 V

Number of Terminals :

3

REACH SVHC :

No SVHC

Factory Lead Time :

28 Weeks

Pbfree Code :

yes

Reach Compliance Code :

Compliant

Height :

21.46 mm

Vgs(th) (Max) @ Id :

4V @ 250µA

Pin Count :

3

Series :

MegaMOS™

Rds On (Max) @ Id, Vgs :

45m Ω @ 25A, 10V

Configuration :

Single

Power Dissipation (Max) :

300W (Tc)

Number of Elements :

1

Power Dissipation Ambient-Max :

300 W

Mounting Type :

Through Hole

Number of Terminations :

3

Pulsed Drain Current-Max (IDM) :

200A

JEDEC-95 Code :

TO-247AD

Drain to Source Voltage (Vdss) :

200V

Nominal Vgs :

4 V

Product Status :

Active

Current - Continuous Drain (Id) @ 25°C :

50A Tc

Lead Free :

Lead Free

JESD-30 Code :

R-PSFM-T3

Resistance :

45mOhm

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Packaging :

Tube

Operating Mode :

ENHANCEMENT MODE

Brand :

IXYS

Power Dissipation :

300W

Drive Voltage (Max Rds On,Min Rds On) :

10V

Supplier Device Package :

TO-247 (IXTH)

Width :

5.3 mm

Surface Mount :

No

Channel Mode :

Enhancement

Continuous Drain Current (ID) :

50A

Product Category :

MOSFET

Package :

Tube

RoHS :

Details

Manufacturer :

IXYS

Power Dissipation-Max (Abs) :

250 W

Qualification Status :

Not Qualified

RoHS Status :

ROHS3 Compliant

Gate to Source Voltage (Vgs) :

20V

Fall Time (Typ) :

16 ns

Transistor Element Material :

SILICON

Dual Supply Voltage :

200V

Input Capacitance (Ciss) (Max) @ Vds :

4600pF @ 25V

Current Rating :

50A

ECCN Code :

EAR99

Power Dissipation-Max :

300W Tc

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

220nC @ 10V

Polarity/Channel Type :

N-Channel

Published :

2000

Package / Case :

TO-247-3

Terminal Position :

Single

Turn-Off Delay Time :

72 ns