IXTH50N20

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Mfr.Part #
IXTH50N20
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 200V 50A TO247
Stock
2,621
In Stock :
2,621

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Product Type :
MOSFET
Operating Mode :
ENHANCEMENT MODE
Input Capacitance (Ciss) (Max) @ Vds :
4600pF @ 25V
Transistor Polarity :
N-Channel
JEDEC-95 Code :
TO-247AD
Mounting Style :
Through Hole
Drain to Source Breakdown Voltage :
200V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Power Dissipation Ambient-Max :
300 W
REACH SVHC :
No SVHC
Transistor Element Material :
SILICON
Resistance :
45mOhm
Qualification Status :
Not Qualified
Length :
16.26 mm
Surface Mount :
No
Lead Free :
Lead Free
Mounting Type :
Through Hole
JESD-30 Code :
R-PSFM-T3
Manufacturer :
IXYS
RoHS :
Details
Gate Charge (Qg) (Max) @ Vgs :
220nC @ 10V
Pulsed Drain Current-Max (IDM) :
200A
Drain to Source Voltage (Vdss) :
200V
Package :
Tube
Packaging :
Tube
Pbfree Code :
yes
Reach Compliance Code :
Compliant
Drain Current-Max (Abs) (ID) :
50 A
Height :
21.46 mm
Number of Terminals :
3
Fall Time (Typ) :
16 ns
Vgs (Max) :
±20V
Radiation Hardening :
No
Power Dissipation-Max :
300W Tc
Number of Channels :
1 Channel
Power Dissipation :
300W
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Number of Elements :
1
Continuous Drain Current (ID) :
50A
ECCN Code :
EAR99
DS Breakdown Voltage-Min :
200 V
Published :
2000
Turn-Off Delay Time :
72 ns
Polarity/Channel Type :
N-Channel
Supplier Device Package :
TO-247 (IXTH)
Minimum Operating Temperature :
- 55 C
Channel Mode :
Enhancement
Power Dissipation (Max) :
300W (Tc)
Terminal Form :
THROUGH-HOLE
Package Shape :
RECTANGULAR
Dual Supply Voltage :
200V
RoHS Status :
ROHS3 Compliant
FET Type :
N-Channel
Element Configuration :
Single
Product Category :
MOSFET
FET Feature :
--
Factory Lead Time :
28 Weeks
Mount :
Through Hole
Series :
MegaMOS™
Current Rating :
50A
Rise Time :
15ns
Rds On (Max) @ Id, Vgs :
45m Ω @ 25A, 10V
Nominal Vgs :
4 V
Threshold Voltage :
4V
Brand :
IXYS
Voltage - Rated DC :
200V
Maximum Operating Temperature :
+ 150 C
Transistor Application :
SWITCHING
Power Dissipation-Max (Abs) :
250 W
Pin Count :
3
Package / Case :
TO-247-3
Number of Terminations :
3
Terminal Position :
Single
Width :
5.3 mm
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Number of Pins :
3
Product Status :
Active
Drain-source On Resistance-Max :
0.045 Ω
Vgs(th) (Max) @ Id :
4V @ 250µA
Current - Continuous Drain (Id) @ 25°C :
50A Tc
Operating Temperature :
-55°C~150°C TJ
Transistor Type :
1 N-Channel
Gate to Source Voltage (Vgs) :
20V
Configuration :
Single
Base Product Number :
IXTH50
Case Connection :
DRAIN
Datasheets
IXTH50N20
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTH50N20 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Number of Channels:1 Channel, Package / Case:TO-247-3, Number of Terminations:3, Number of Pins:3, Operating Temperature:-55°C~150°C TJ, IXTH50N20 pinout, IXTH50N20 datasheet PDF, IXTH50N20 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTH50N20 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTH50N20


N-Channel Tube 45m Ω @ 25A, 10V ±20V 4600pF @ 25V 220nC @ 10V 200V TO-247-3

IXTH50N20 Overview


CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 4600pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 200V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 200V.There is no drain current on this device since the maximum continuous current it can conduct is 50 A.As a result of its turn-off delay time, which is 72 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 200A, its maximum pulsed drain current.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 4V.In order for DS breakdown voltage to remain above 200 V, it should remain above the 200 V level.The transistor must receive a 200V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

IXTH50N20 Features


a continuous drain current (ID) of 50A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 72 ns
based on its rated peak drain current 200A.
a threshold voltage of 4V
a 200V drain to source voltage (Vdss)


IXTH50N20 Applications


There are a lot of IXYS
IXTH50N20 applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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