IXTH4N150
- Mfr.Part #
- IXTH4N150
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 1500V 4A TO247
- Stock
- 12,234
- In Stock :
- 12,234
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- FET Feature :
- --
- Gate Charge (Qg) (Max) @ Vgs :
- 44.5nC @ 10V
- Published :
- 2012
- Polarity/Channel Type :
- N-Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Package :
- Tube
- RoHS :
- Details
- Operating Temperature :
- -55°C~150°C TJ
- RoHS Status :
- ROHS3 Compliant
- Number of Terminals :
- 3
- Channel Mode :
- Enhancement
- Operating Mode :
- ENHANCEMENT MODE
- Brand :
- IXYS
- Base Product Number :
- IXTH4
- Vgs (Max) :
- ±30V
- Additional Feature :
- AVALANCHE RATED
- Transistor Application :
- SWITCHING
- Input Capacitance (Ciss) (Max) @ Vds :
- 1576pF @ 25V
- Number of Channels :
- 1 Channel
- Packaging :
- Tube
- Power Dissipation-Max :
- 280W Tc
- Transistor Polarity :
- N-Channel
- Surface Mount :
- No
- Mount :
- Through Hole
- JEDEC-95 Code :
- TO-247
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Qualification Status :
- Not Qualified
- Current - Continuous Drain (Id) @ 25°C :
- 4A Tc
- Minimum Operating Temperature :
- - 55 C
- Package Shape :
- RECTANGULAR
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Supplier Device Package :
- TO-247 (IXTH)
- Drain-source On Resistance-Max :
- 6Ohm
- Pin Count :
- 3
- DS Breakdown Voltage-Min :
- 1500V
- Case Connection :
- DRAIN
- Avalanche Energy Rating (Eas) :
- 350 mJ
- Reach Compliance Code :
- Compliant
- FET Type :
- N-Channel
- Maximum Operating Temperature :
- + 150 C
- Transistor Element Material :
- SILICON
- Product Category :
- MOSFET
- Number of Terminations :
- 3
- Terminal Form :
- THROUGH-HOLE
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Drain to Source Voltage (Vdss) :
- 1500V
- Drain Current-Max (Abs) (ID) :
- 4A
- Pulsed Drain Current-Max (IDM) :
- 12A
- JESD-30 Code :
- R-PSFM-T3
- Number of Elements :
- 1
- Mounting Type :
- Through Hole
- Terminal Position :
- Single
- Manufacturer :
- IXYS
- Factory Lead Time :
- 3 Weeks
- Rds On (Max) @ Id, Vgs :
- 6 Ω @ 2A, 10V
- Mounting Style :
- Through Hole
- Product Type :
- MOSFET
- Power Dissipation (Max) :
- 280W (Tc)
- Continuous Drain Current (ID) :
- 4A
- Series :
- --
- Product Status :
- Active
- Power Dissipation-Max (Abs) :
- 280 W
- Package / Case :
- TO-247-3
- Datasheets
- IXTH4N150
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N-Channel Tube 6 Ω @ 2A, 10V ±30V 1576pF @ 25V 44.5nC @ 10V 1500V TO-247-3
IXTH4N150 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 350 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1576pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.There is no drain current on this device since the maximum continuous current it can conduct is 4A.There is a peak drain current of 12A, its maximum pulsed drain current.In order for DS breakdown voltage to remain above 1500V, it should remain above the 1500V level.The transistor must receive a 1500V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IXTH4N150 Features
the avalanche energy rating (Eas) is 350 mJ
a continuous drain current (ID) of 4A
based on its rated peak drain current 12A.
a 1500V drain to source voltage (Vdss)
IXTH4N150 Applications
There are a lot of IXYS
IXTH4N150 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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