IXTH48N20
- Mfr.Part #
- IXTH48N20
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 48A TO247
- Stock
- 10,377
- In Stock :
- 10,377
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Series :
- --
- Product Category :
- MOSFET
- Packaging :
- Tube
- Transistor Element Material :
- SILICON
- Drain to Source Breakdown Voltage :
- 200V
- Manufacturer :
- IXYS
- Operating Mode :
- ENHANCEMENT MODE
- Package Shape :
- RECTANGULAR
- RoHS :
- Details
- Drain-source On Resistance-Max :
- 0.05Ohm
- FET Feature :
- --
- JEDEC-95 Code :
- TO-247AD
- Number of Terminations :
- 3
- Reach Compliance Code :
- Compliant
- Number of Pins :
- 3
- Product Type :
- MOSFET
- Terminal Position :
- Single
- Transistor Polarity :
- N-Channel
- Qualification Status :
- Not Qualified
- Case Connection :
- DRAIN
- Turn-Off Delay Time :
- 79 ns
- Configuration :
- Single
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Current - Continuous Drain (Id) @ 25°C :
- 48A Tc
- Element Configuration :
- Single
- Length :
- 16.26 mm
- Pulsed Drain Current-Max (IDM) :
- 192A
- JESD-30 Code :
- R-PSFM-T3
- Power Dissipation (Max) :
- 275W (Tc)
- Package / Case :
- TO-247-3
- Product Status :
- Active
- Rise Time :
- 19ns
- Subcategory :
- MOSFETs
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Terminal Form :
- THROUGH-HOLE
- Rds On (Max) @ Id, Vgs :
- 50m Ω @ 15A, 10V
- Avalanche Energy Rating (Eas) :
- 1000 mJ
- Channel Mode :
- Enhancement
- DS Breakdown Voltage-Min :
- 200 V
- Maximum Operating Temperature :
- + 150 C
- Drain to Source Voltage (Vdss) :
- 200V
- Brand :
- IXYS
- Power Dissipation :
- 275W
- Number of Elements :
- 1
- Width :
- 5.3 mm
- Pin Count :
- 3
- FET Type :
- N-Channel
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate to Source Voltage (Vgs) :
- 20V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Surface Mount :
- No
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Number of Terminals :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Supplier Device Package :
- TO-247 (IXTH)
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Application :
- SWITCHING
- Polarity/Channel Type :
- N-Channel
- Power Dissipation-Max :
- 275W Tc
- ECCN Code :
- EAR99
- Pbfree Code :
- yes
- Package :
- Tube
- Transistor Type :
- 1 N-Channel
- Number of Channels :
- 1 Channel
- Height :
- 21.46 mm
- Published :
- 2003
- Mounting Type :
- Through Hole
- Input Capacitance (Ciss) (Max) @ Vds :
- 3000pF @ 25V
- RoHS Status :
- ROHS3 Compliant
- Gate Charge (Qg) (Max) @ Vgs :
- 110nC @ 10V
- Fall Time (Typ) :
- 17 ns
- Mounting Style :
- Through Hole
- Mount :
- Through Hole
- Continuous Drain Current (ID) :
- 48A
- Minimum Operating Temperature :
- - 55 C
- Base Product Number :
- IXTH48
- Vgs (Max) :
- ±20V
- Datasheets
- IXTH48N20
IXTH48N20 Documents
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N-Channel Tube 50m Ω @ 15A, 10V ±20V 3000pF @ 25V 110nC @ 10V 200V TO-247-3
IXTH48N20 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 1000 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 3000pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 200V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 200V.As a result of its turn-off delay time, which is 79 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 192A, its maximum pulsed drain current.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In order for DS breakdown voltage to remain above 200 V, it should remain above the 200 V level.The transistor must receive a 200V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IXTH48N20 Features
the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 48A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 79 ns
based on its rated peak drain current 192A.
a 200V drain to source voltage (Vdss)
IXTH48N20 Applications
There are a lot of IXYS
IXTH48N20 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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