IXTH48N20

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Mfr.Part #
IXTH48N20
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 200V 48A TO247
Stock
10,377
In Stock :
10,377

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
RoHS :
Details
Base Product Number :
IXTH48
Case Connection :
DRAIN
Configuration :
Single
Package Shape :
RECTANGULAR
Product Type :
MOSFET
Power Dissipation (Max) :
275W (Tc)
FET Type :
N-Channel
Vgs (Max) :
±20V
Number of Elements :
1
Surface Mount :
No
Polarity/Channel Type :
N-Channel
Drain to Source Voltage (Vdss) :
200V
Continuous Drain Current (ID) :
48A
Height :
21.46 mm
Rise Time :
19ns
Fall Time (Typ) :
17 ns
Package / Case :
TO-247-3
Reach Compliance Code :
Compliant
DS Breakdown Voltage-Min :
200 V
Pin Count :
3
Transistor Element Material :
SILICON
Product Category :
MOSFET
Subcategory :
MOSFETs
Turn-Off Delay Time :
79 ns
Length :
16.26 mm
Qualification Status :
Not Qualified
ECCN Code :
EAR99
Drain-source On Resistance-Max :
0.05Ohm
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Element Configuration :
Single
Rds On (Max) @ Id, Vgs :
50m Ω @ 15A, 10V
Mount :
Through Hole
Number of Terminals :
3
Gate to Source Voltage (Vgs) :
20V
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Current - Continuous Drain (Id) @ 25°C :
48A Tc
Terminal Form :
THROUGH-HOLE
Manufacturer :
IXYS
Number of Channels :
1 Channel
Pbfree Code :
yes
Operating Temperature :
-55°C~150°C TJ
Brand :
IXYS
Channel Mode :
Enhancement
Vgs(th) (Max) @ Id :
4V @ 250µA
Transistor Application :
SWITCHING
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Drive Voltage (Max Rds On,Min Rds On) :
10V
Mounting Style :
Through Hole
Gate Charge (Qg) (Max) @ Vgs :
110nC @ 10V
Power Dissipation :
275W
RoHS Status :
ROHS3 Compliant
Series :
--
Operating Mode :
ENHANCEMENT MODE
Drain to Source Breakdown Voltage :
200V
Transistor Polarity :
N-Channel
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Mounting Type :
Through Hole
Width :
5.3 mm
Terminal Position :
Single
Power Dissipation-Max :
275W Tc
FET Feature :
--
Input Capacitance (Ciss) (Max) @ Vds :
3000pF @ 25V
Minimum Operating Temperature :
- 55 C
Avalanche Energy Rating (Eas) :
1000 mJ
Transistor Type :
1 N-Channel
Published :
2003
JEDEC-95 Code :
TO-247AD
Number of Terminations :
3
Product Status :
Active
Pulsed Drain Current-Max (IDM) :
192A
Package :
Tube
JESD-30 Code :
R-PSFM-T3
Packaging :
Tube
Number of Pins :
3
Maximum Operating Temperature :
+ 150 C
Supplier Device Package :
TO-247 (IXTH)
Datasheets
IXTH48N20
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTH48N20 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-247-3, Number of Channels:1 Channel, Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Number of Terminations:3, Number of Pins:3, IXTH48N20 pinout, IXTH48N20 datasheet PDF, IXTH48N20 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTH48N20 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTH48N20


N-Channel Tube 50m Ω @ 15A, 10V ±20V 3000pF @ 25V 110nC @ 10V 200V TO-247-3

IXTH48N20 Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 1000 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 3000pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 200V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 200V.As a result of its turn-off delay time, which is 79 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 192A, its maximum pulsed drain current.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In order for DS breakdown voltage to remain above 200 V, it should remain above the 200 V level.The transistor must receive a 200V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

IXTH48N20 Features


the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 48A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 79 ns
based on its rated peak drain current 192A.
a 200V drain to source voltage (Vdss)


IXTH48N20 Applications


There are a lot of IXYS
IXTH48N20 applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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