IXTH48N20
- Mfr.Part #
- IXTH48N20
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 48A TO247
- Stock
- 10,377
- In Stock :
- 10,377
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- RoHS :
- Details
- Base Product Number :
- IXTH48
- Case Connection :
- DRAIN
- Configuration :
- Single
- Package Shape :
- RECTANGULAR
- Product Type :
- MOSFET
- Power Dissipation (Max) :
- 275W (Tc)
- FET Type :
- N-Channel
- Vgs (Max) :
- ±20V
- Number of Elements :
- 1
- Surface Mount :
- No
- Polarity/Channel Type :
- N-Channel
- Drain to Source Voltage (Vdss) :
- 200V
- Continuous Drain Current (ID) :
- 48A
- Height :
- 21.46 mm
- Rise Time :
- 19ns
- Fall Time (Typ) :
- 17 ns
- Package / Case :
- TO-247-3
- Reach Compliance Code :
- Compliant
- DS Breakdown Voltage-Min :
- 200 V
- Pin Count :
- 3
- Transistor Element Material :
- SILICON
- Product Category :
- MOSFET
- Subcategory :
- MOSFETs
- Turn-Off Delay Time :
- 79 ns
- Length :
- 16.26 mm
- Qualification Status :
- Not Qualified
- ECCN Code :
- EAR99
- Drain-source On Resistance-Max :
- 0.05Ohm
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Element Configuration :
- Single
- Rds On (Max) @ Id, Vgs :
- 50m Ω @ 15A, 10V
- Mount :
- Through Hole
- Number of Terminals :
- 3
- Gate to Source Voltage (Vgs) :
- 20V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Current - Continuous Drain (Id) @ 25°C :
- 48A Tc
- Terminal Form :
- THROUGH-HOLE
- Manufacturer :
- IXYS
- Number of Channels :
- 1 Channel
- Pbfree Code :
- yes
- Operating Temperature :
- -55°C~150°C TJ
- Brand :
- IXYS
- Channel Mode :
- Enhancement
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Mounting Style :
- Through Hole
- Gate Charge (Qg) (Max) @ Vgs :
- 110nC @ 10V
- Power Dissipation :
- 275W
- RoHS Status :
- ROHS3 Compliant
- Series :
- --
- Operating Mode :
- ENHANCEMENT MODE
- Drain to Source Breakdown Voltage :
- 200V
- Transistor Polarity :
- N-Channel
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Mounting Type :
- Through Hole
- Width :
- 5.3 mm
- Terminal Position :
- Single
- Power Dissipation-Max :
- 275W Tc
- FET Feature :
- --
- Input Capacitance (Ciss) (Max) @ Vds :
- 3000pF @ 25V
- Minimum Operating Temperature :
- - 55 C
- Avalanche Energy Rating (Eas) :
- 1000 mJ
- Transistor Type :
- 1 N-Channel
- Published :
- 2003
- JEDEC-95 Code :
- TO-247AD
- Number of Terminations :
- 3
- Product Status :
- Active
- Pulsed Drain Current-Max (IDM) :
- 192A
- Package :
- Tube
- JESD-30 Code :
- R-PSFM-T3
- Packaging :
- Tube
- Number of Pins :
- 3
- Maximum Operating Temperature :
- + 150 C
- Supplier Device Package :
- TO-247 (IXTH)
- Datasheets
- IXTH48N20
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N-Channel Tube 50m Ω @ 15A, 10V ±20V 3000pF @ 25V 110nC @ 10V 200V TO-247-3
IXTH48N20 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 1000 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 3000pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 200V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 200V.As a result of its turn-off delay time, which is 79 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 192A, its maximum pulsed drain current.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In order for DS breakdown voltage to remain above 200 V, it should remain above the 200 V level.The transistor must receive a 200V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IXTH48N20 Features
the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 48A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 79 ns
based on its rated peak drain current 192A.
a 200V drain to source voltage (Vdss)
IXTH48N20 Applications
There are a lot of IXYS
IXTH48N20 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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