IXTH48N15

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

32m Ω @ 500mA, 10V

JESD-30 Code :

R-PSFM-T3

Turn-Off Delay Time :

68 ns

Number of Terminations :

3

Maximum Operating Temperature :

+ 150 C

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Elements :

1

Transistor Element Material :

SILICON

Polarity/Channel Type :

N-Channel

Brand :

IXYS

Number of Pins :

3

Element Configuration :

Single

Mounting Type :

Through Hole

Vgs(th) (Max) @ Id :

--

Subcategory :

MOSFETs

Base Product Number :

IXTH48

Channel Mode :

Enhancement

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mounting Style :

Through Hole

Package / Case :

TO-247-3

Minimum Operating Temperature :

- 55 C

Number of Channels :

1 Channel

Power Dissipation-Max :

180W Tc

Packaging :

Tube

Pulsed Drain Current-Max (IDM) :

192A

Terminal Form :

THROUGH-HOLE

Manufacturer :

IXYS

Pbfree Code :

yes

Operating Temperature :

-55°C~150°C TJ

Length :

16.26 mm

JEDEC-95 Code :

TO-247AD

Case Connection :

DRAIN

Product Status :

Active

Fall Time (Typ) :

17 ns

RoHS :

Details

Package :

Tube

Series :

--

Continuous Drain Current (ID) :

48A

Product Type :

MOSFET

DS Breakdown Voltage-Min :

150 V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Polarity :

N-Channel

Avalanche Energy Rating (Eas) :

1000 mJ

RoHS Status :

ROHS3 Compliant

Transistor Type :

1 N-Channel

FET Feature :

--

Vgs (Max) :

±20V

FET Type :

N-Channel

Configuration :

Single

Input Capacitance (Ciss) (Max) @ Vds :

3200pF @ 25V

ECCN Code :

EAR99

Reach Compliance Code :

Compliant

Power Dissipation (Max) :

180W (Tc)

Supplier Device Package :

TO-247 (IXTH)

Pin Count :

3

Transistor Application :

SWITCHING

Qualification Status :

Not Qualified

Drain to Source Breakdown Voltage :

150V

Operating Mode :

ENHANCEMENT MODE

Width :

5.3 mm

Drain to Source Voltage (Vdss) :

150V

Gate to Source Voltage (Vgs) :

20V

Product Category :

MOSFET

Published :

2002

Drain-source On Resistance-Max :

0.032 Ω

Current - Continuous Drain (Id) @ 25°C :

48A Tc

Number of Terminals :

3

Surface Mount :

No

Mount :

Through Hole

Rise Time :

20ns

Height :

21.46 mm

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation :

180W

Package Shape :

RECTANGULAR

Terminal Position :

Single

Gate Charge (Qg) (Max) @ Vgs :

140nC @ 10V