IXTH450P2
- Mfr.Part #
- IXTH450P2
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 16A TO247
- Stock
- 122
- In Stock :
- 122
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Tradename :
- Polar2 HiPerFET
- Additional Feature :
- AVALANCHE RATED
- Pin Count :
- 3
- JESD-30 Code :
- R-PSFM-T3
- Transistor Polarity :
- N-Channel
- FET Type :
- N-Channel
- Number of Terminations :
- 3
- Qualification Status :
- Not Qualified
- Factory Lead Time :
- 28 Weeks
- Mount :
- Through Hole
- Package / Case :
- TO-247-3
- DS Breakdown Voltage-Min :
- 500 V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Drain Current-Max (Abs) (ID) :
- 16 A
- Continuous Drain Current (ID) :
- 16A
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Drain to Source Breakdown Voltage :
- 500V
- Lead Free :
- Lead Free
- Power Dissipation-Max (Abs) :
- 300 W
- Base Product Number :
- IXTH450
- Packaging :
- Tube
- Product Category :
- MOSFET
- Vgs (Max) :
- ±30V
- Power Dissipation (Max) :
- 300W (Tc)
- Product Status :
- Active
- Minimum Operating Temperature :
- - 55 C
- Rds On (Max) @ Id, Vgs :
- 330m Ω @ 8A, 10V
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Element Material :
- SILICON
- Drain to Source Voltage (Vdss) :
- 500V
- Current - Continuous Drain (Id) @ 25°C :
- 16A Tc
- Operating Mode :
- ENHANCEMENT MODE
- Element Configuration :
- Single
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Mounting Style :
- Through Hole
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Power Dissipation-Max :
- 300W Tc
- Number of Terminals :
- 3
- Radiation Hardening :
- No
- JEDEC-95 Code :
- TO-247
- JESD-609 Code :
- e1
- FET Feature :
- --
- Series :
- PolarP2™
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Transistor Type :
- 1 N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 43nC @ 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Position :
- Single
- Case Connection :
- DRAIN
- Brand :
- IXYS
- Configuration :
- Single
- Package Shape :
- RECTANGULAR
- Published :
- 2011
- Maximum Operating Temperature :
- + 150 C
- RoHS :
- Details
- Number of Elements :
- 1
- Avalanche Energy Rating (Eas) :
- 750 mJ
- Terminal Form :
- THROUGH-HOLE
- RoHS Status :
- ROHS3 Compliant
- Pulsed Drain Current-Max (IDM) :
- 35A
- Product Type :
- MOSFET
- Channel Mode :
- Enhancement
- Transistor Application :
- SWITCHING
- Pbfree Code :
- yes
- Supplier Device Package :
- TO-247 (IXTH)
- Surface Mount :
- No
- Type :
- PolarP2 Power MOSFET
- Package :
- Tube
- Input Capacitance (Ciss) (Max) @ Vds :
- 2530pF @ 25V
- Mounting Type :
- Through Hole
- Number of Channels :
- 1 Channel
- Drain-source On Resistance-Max :
- 0.33Ohm
- Gate to Source Voltage (Vgs) :
- 30V
- Power Dissipation :
- 300W
- Reach Compliance Code :
- Compliant
- Polarity/Channel Type :
- N-Channel
- Manufacturer :
- IXYS
- Datasheets
- IXTH450P2
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N-Channel Tube 330m Ω @ 8A, 10V ±30V 2530pF @ 25V 43nC @ 10V 500V TO-247-3
IXTH450P2 Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 750 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 2530pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 16A.With a drain-source breakdown voltage of 500V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 500V.16 A is the drain current of this device, which is the maximum continuous current transistor can carry.Peak drain current for this device is 35A, which is its maximum pulsed drain current.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 500 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 500V.Using drive voltage (10V) reduces this device's overall power consumption.
IXTH450P2 Features
the avalanche energy rating (Eas) is 750 mJ
a continuous drain current (ID) of 16A
a drain-to-source breakdown voltage of 500V voltage
based on its rated peak drain current 35A.
a 500V drain to source voltage (Vdss)
IXTH450P2 Applications
There are a lot of IXYS
IXTH450P2 applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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