IXTH450P2

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Mfr.Part #
IXTH450P2
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 500V 16A TO247
Stock
122
In Stock :
122

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Input Capacitance (Ciss) (Max) @ Vds :
2530pF @ 25V
Mount :
Through Hole
Packaging :
Tube
Package / Case :
TO-247-3
Manufacturer :
IXYS
Drain to Source Breakdown Voltage :
500V
Drain Current-Max (Abs) (ID) :
16 A
Radiation Hardening :
No
RoHS :
Details
Pin Count :
3
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Continuous Drain Current (ID) :
16A
Power Dissipation :
300W
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Vgs (Max) :
±30V
Terminal Position :
Single
Published :
2011
Product Category :
MOSFET
Base Product Number :
IXTH450
DS Breakdown Voltage-Min :
500 V
Product Status :
Active
Surface Mount :
No
Lead Free :
Lead Free
Number of Terminations :
3
JESD-609 Code :
e1
Gate to Source Voltage (Vgs) :
30V
FET Type :
N-Channel
Terminal Form :
THROUGH-HOLE
Vgs(th) (Max) @ Id :
4.5V @ 250μA
Mounting Style :
Through Hole
Maximum Operating Temperature :
+ 150 C
Number of Elements :
1
Power Dissipation-Max (Abs) :
300 W
Configuration :
Single
JESD-30 Code :
R-PSFM-T3
Mounting Type :
Through Hole
Supplier Device Package :
TO-247 (IXTH)
Rds On (Max) @ Id, Vgs :
330m Ω @ 8A, 10V
Type :
PolarP2 Power MOSFET
Package Shape :
RECTANGULAR
Minimum Operating Temperature :
- 55 C
Qualification Status :
Not Qualified
Transistor Element Material :
SILICON
Package :
Tube
Current - Continuous Drain (Id) @ 25°C :
16A Tc
Series :
PolarP2™
Power Dissipation (Max) :
300W (Tc)
Drive Voltage (Max Rds On,Min Rds On) :
10V
Reach Compliance Code :
Compliant
Power Dissipation-Max :
300W Tc
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Brand :
IXYS
Gate Charge (Qg) (Max) @ Vgs :
43nC @ 10V
Transistor Application :
SWITCHING
Element Configuration :
Single
Factory Lead Time :
28 Weeks
Drain-source On Resistance-Max :
0.33Ohm
Number of Channels :
1 Channel
Operating Mode :
ENHANCEMENT MODE
JEDEC-95 Code :
TO-247
Additional Feature :
AVALANCHE RATED
Pbfree Code :
yes
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Drain to Source Voltage (Vdss) :
500V
Transistor Type :
1 N-Channel
Channel Mode :
Enhancement
Operating Temperature :
-55°C~150°C TJ
Product Type :
MOSFET
RoHS Status :
ROHS3 Compliant
Number of Terminals :
3
Avalanche Energy Rating (Eas) :
750 mJ
Pulsed Drain Current-Max (IDM) :
35A
Polarity/Channel Type :
N-Channel
Case Connection :
DRAIN
Transistor Polarity :
N-Channel
Tradename :
Polar2 HiPerFET
FET Feature :
--
Datasheets
IXTH450P2
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTH450P2 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-247-3, Number of Terminations:3, Mounting Type:Through Hole, Type:PolarP2 Power MOSFET, Number of Channels:1 Channel, Operating Temperature:-55°C~150°C TJ, IXTH450P2 pinout, IXTH450P2 datasheet PDF, IXTH450P2 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTH450P2 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTH450P2


N-Channel Tube 330m Ω @ 8A, 10V ±30V 2530pF @ 25V 43nC @ 10V 500V TO-247-3

IXTH450P2 Overview


Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 750 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 2530pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 16A.With a drain-source breakdown voltage of 500V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 500V.16 A is the drain current of this device, which is the maximum continuous current transistor can carry.Peak drain current for this device is 35A, which is its maximum pulsed drain current.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 500 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 500V.Using drive voltage (10V) reduces this device's overall power consumption.

IXTH450P2 Features


the avalanche energy rating (Eas) is 750 mJ
a continuous drain current (ID) of 16A
a drain-to-source breakdown voltage of 500V voltage
based on its rated peak drain current 35A.
a 500V drain to source voltage (Vdss)


IXTH450P2 Applications


There are a lot of IXYS
IXTH450P2 applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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