IXTH41N25
- Mfr.Part #
- IXTH41N25
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 250V 41A TO247
- Stock
- 34,097
- In Stock :
- 34,097
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package :
- Tube
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Avalanche Energy Rating (Eas) :
- 1000 mJ
- Maximum Operating Temperature :
- + 150 C
- Rds On (Max) @ Id, Vgs :
- 72m Ω @ 15A, 10V
- Number of Channels :
- 1 Channel
- DS Breakdown Voltage-Min :
- 250 V
- Subcategory :
- MOSFETs
- Height :
- 21.46 mm
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Transistor Element Material :
- SILICON
- Manufacturer :
- IXYS
- Gate Charge (Qg) (Max) @ Vgs :
- 110nC @ 10V
- Pbfree Code :
- yes
- Reach Compliance Code :
- Compliant
- Transistor Application :
- SWITCHING
- Power Dissipation (Max) :
- 300W (Tc)
- Product Status :
- Active
- Width :
- 5.3 mm
- JESD-30 Code :
- R-PSFM-T3
- FET Feature :
- -
- RoHS Status :
- ROHS3 Compliant
- Qualification Status :
- Not Qualified
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Operating Mode :
- ENHANCEMENT MODE
- Channel Mode :
- Enhancement
- Published :
- 2003
- Product Type :
- MOSFET
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Mounting Type :
- Through Hole
- Turn-Off Delay Time :
- 79 ns
- ECCN Code :
- EAR99
- Number of Elements :
- 1
- Element Configuration :
- Single
- Power Dissipation-Max :
- 300W Tc
- Drain to Source Breakdown Voltage :
- 250V
- Minimum Operating Temperature :
- - 55 C
- Mount :
- Through Hole
- RoHS :
- Details
- Mounting Style :
- Through Hole
- Gate to Source Voltage (Vgs) :
- 20V
- Power Dissipation :
- 300W
- Product Category :
- MOSFET
- Drain-source On Resistance-Max :
- 0.072Ohm
- JEDEC-95 Code :
- TO-247AD
- Number of Pins :
- 3
- Base Product Number :
- IXTH41
- Pin Count :
- 3
- Number of Terminals :
- 3
- Pulsed Drain Current-Max (IDM) :
- 164A
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Drain to Source Voltage (Vdss) :
- 250V
- Vgs (Max) :
- ±20V
- Polarity/Channel Type :
- N-Channel
- Series :
- -
- Packaging :
- Tube
- Current - Continuous Drain (Id) @ 25°C :
- 41A Tc
- Transistor Type :
- 1 N-Channel
- Rise Time :
- 19ns
- Configuration :
- Single
- Supplier Device Package :
- TO-247 (IXTH)
- Number of Terminations :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- Package Shape :
- RECTANGULAR
- Surface Mount :
- No
- Continuous Drain Current (ID) :
- 41A
- Terminal Form :
- THROUGH-HOLE
- Input Capacitance (Ciss) (Max) @ Vds :
- 3200pF @ 25V
- Transistor Polarity :
- N-Channel
- Terminal Position :
- Single
- FET Type :
- N-Channel
- Length :
- 16.26 mm
- Case Connection :
- DRAIN
- Fall Time (Typ) :
- 17 ns
- Package / Case :
- TO-247-3
- Brand :
- IXYS
- Datasheets
- IXTH41N25
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N-Channel Tube 72m Ω @ 15A, 10V ±20V 3200pF @ 25V 110nC @ 10V 250V TO-247-3
IXTH41N25 Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 1000 mJ.A device's maximal input capacitance is 3200pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 41A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 250V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 79 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 164A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 250 V.This transistor requires a 250V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IXTH41N25 Features
the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 41A
a drain-to-source breakdown voltage of 250V voltage
the turn-off delay time is 79 ns
based on its rated peak drain current 164A.
a 250V drain to source voltage (Vdss)
IXTH41N25 Applications
There are a lot of IXYS
IXTH41N25 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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