IXTH41N25
- Mfr.Part #
- IXTH41N25
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 250V 41A TO247
- Stock
- 34,097
- In Stock :
- 34,097
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Polarity/Channel Type :
- N-Channel
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Continuous Drain (Id) @ 25°C :
- 41A Tc
- Transistor Application :
- SWITCHING
- Number of Elements :
- 1
- Number of Terminations :
- 3
- Package :
- Tube
- Product Type :
- MOSFET
- Reach Compliance Code :
- Compliant
- Configuration :
- Single
- Drain to Source Breakdown Voltage :
- 250V
- ECCN Code :
- EAR99
- Power Dissipation :
- 300W
- Drain to Source Voltage (Vdss) :
- 250V
- Rise Time :
- 19ns
- Product Category :
- MOSFET
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Number of Pins :
- 3
- Vgs (Max) :
- ±20V
- Supplier Device Package :
- TO-247 (IXTH)
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Subcategory :
- MOSFETs
- Mounting Type :
- Through Hole
- Series :
- -
- DS Breakdown Voltage-Min :
- 250 V
- Product Status :
- Active
- Rds On (Max) @ Id, Vgs :
- 72m Ω @ 15A, 10V
- Transistor Polarity :
- N-Channel
- Transistor Type :
- 1 N-Channel
- Terminal Form :
- THROUGH-HOLE
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Width :
- 5.3 mm
- Maximum Operating Temperature :
- + 150 C
- Input Capacitance (Ciss) (Max) @ Vds :
- 3200pF @ 25V
- Base Product Number :
- IXTH41
- Mount :
- Through Hole
- Pulsed Drain Current-Max (IDM) :
- 164A
- Surface Mount :
- No
- JESD-30 Code :
- R-PSFM-T3
- Manufacturer :
- IXYS
- Pin Count :
- 3
- RoHS :
- Details
- Power Dissipation (Max) :
- 300W (Tc)
- Turn-Off Delay Time :
- 79 ns
- Package / Case :
- TO-247-3
- Case Connection :
- DRAIN
- Minimum Operating Temperature :
- - 55 C
- Gate Charge (Qg) (Max) @ Vgs :
- 110nC @ 10V
- Transistor Element Material :
- SILICON
- Channel Mode :
- Enhancement
- Drain-source On Resistance-Max :
- 0.072Ohm
- Qualification Status :
- Not Qualified
- Published :
- 2003
- FET Type :
- N-Channel
- Mounting Style :
- Through Hole
- Height :
- 21.46 mm
- FET Feature :
- -
- Length :
- 16.26 mm
- Pbfree Code :
- yes
- Power Dissipation-Max :
- 300W Tc
- Package Shape :
- RECTANGULAR
- Packaging :
- Tube
- Operating Mode :
- ENHANCEMENT MODE
- Terminal Position :
- Single
- Continuous Drain Current (ID) :
- 41A
- Avalanche Energy Rating (Eas) :
- 1000 mJ
- Fall Time (Typ) :
- 17 ns
- RoHS Status :
- ROHS3 Compliant
- JEDEC-95 Code :
- TO-247AD
- Number of Terminals :
- 3
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Element Configuration :
- Single
- Brand :
- IXYS
- Number of Channels :
- 1 Channel
- Operating Temperature :
- -55°C~150°C TJ
- Gate to Source Voltage (Vgs) :
- 20V
- Datasheets
- IXTH41N25
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N-Channel Tube 72m Ω @ 15A, 10V ±20V 3200pF @ 25V 110nC @ 10V 250V TO-247-3
IXTH41N25 Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 1000 mJ.A device's maximal input capacitance is 3200pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 41A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 250V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 79 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 164A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 250 V.This transistor requires a 250V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IXTH41N25 Features
the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 41A
a drain-to-source breakdown voltage of 250V voltage
the turn-off delay time is 79 ns
based on its rated peak drain current 164A.
a 250V drain to source voltage (Vdss)
IXTH41N25 Applications
There are a lot of IXYS
IXTH41N25 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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