IXTH41N25

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Mfr.Part #
IXTH41N25
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 250V 41A TO247
Stock
34,097
In Stock :
34,097

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Polarity/Channel Type :
N-Channel
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Current - Continuous Drain (Id) @ 25°C :
41A Tc
Transistor Application :
SWITCHING
Number of Elements :
1
Number of Terminations :
3
Package :
Tube
Product Type :
MOSFET
Reach Compliance Code :
Compliant
Configuration :
Single
Drain to Source Breakdown Voltage :
250V
ECCN Code :
EAR99
Power Dissipation :
300W
Drain to Source Voltage (Vdss) :
250V
Rise Time :
19ns
Product Category :
MOSFET
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Number of Pins :
3
Vgs (Max) :
±20V
Supplier Device Package :
TO-247 (IXTH)
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Subcategory :
MOSFETs
Mounting Type :
Through Hole
Series :
-
DS Breakdown Voltage-Min :
250 V
Product Status :
Active
Rds On (Max) @ Id, Vgs :
72m Ω @ 15A, 10V
Transistor Polarity :
N-Channel
Transistor Type :
1 N-Channel
Terminal Form :
THROUGH-HOLE
Drive Voltage (Max Rds On,Min Rds On) :
10V
Width :
5.3 mm
Maximum Operating Temperature :
+ 150 C
Input Capacitance (Ciss) (Max) @ Vds :
3200pF @ 25V
Base Product Number :
IXTH41
Mount :
Through Hole
Pulsed Drain Current-Max (IDM) :
164A
Surface Mount :
No
JESD-30 Code :
R-PSFM-T3
Manufacturer :
IXYS
Pin Count :
3
RoHS :
Details
Power Dissipation (Max) :
300W (Tc)
Turn-Off Delay Time :
79 ns
Package / Case :
TO-247-3
Case Connection :
DRAIN
Minimum Operating Temperature :
- 55 C
Gate Charge (Qg) (Max) @ Vgs :
110nC @ 10V
Transistor Element Material :
SILICON
Channel Mode :
Enhancement
Drain-source On Resistance-Max :
0.072Ohm
Qualification Status :
Not Qualified
Published :
2003
FET Type :
N-Channel
Mounting Style :
Through Hole
Height :
21.46 mm
FET Feature :
-
Length :
16.26 mm
Pbfree Code :
yes
Power Dissipation-Max :
300W Tc
Package Shape :
RECTANGULAR
Packaging :
Tube
Operating Mode :
ENHANCEMENT MODE
Terminal Position :
Single
Continuous Drain Current (ID) :
41A
Avalanche Energy Rating (Eas) :
1000 mJ
Fall Time (Typ) :
17 ns
RoHS Status :
ROHS3 Compliant
JEDEC-95 Code :
TO-247AD
Number of Terminals :
3
Vgs(th) (Max) @ Id :
4V @ 250µA
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Element Configuration :
Single
Brand :
IXYS
Number of Channels :
1 Channel
Operating Temperature :
-55°C~150°C TJ
Gate to Source Voltage (Vgs) :
20V
Datasheets
IXTH41N25
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTH41N25 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Number of Pins:3, Mounting Type:Through Hole, Package / Case:TO-247-3, Number of Channels:1 Channel, Operating Temperature:-55°C~150°C TJ, IXTH41N25 pinout, IXTH41N25 datasheet PDF, IXTH41N25 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTH41N25 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTH41N25


N-Channel Tube 72m Ω @ 15A, 10V ±20V 3200pF @ 25V 110nC @ 10V 250V TO-247-3

IXTH41N25 Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 1000 mJ.A device's maximal input capacitance is 3200pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 41A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 250V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 79 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 164A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 250 V.This transistor requires a 250V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

IXTH41N25 Features


the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 41A
a drain-to-source breakdown voltage of 250V voltage
the turn-off delay time is 79 ns
based on its rated peak drain current 164A.
a 250V drain to source voltage (Vdss)


IXTH41N25 Applications


There are a lot of IXYS
IXTH41N25 applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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