IXTH41N25

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

41A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Published :

2003

Pbfree Code :

yes

Operating Temperature :

-55°C~150°C TJ

Drain-source On Resistance-Max :

0.072Ohm

RoHS :

Details

Qualification Status :

Not Qualified

Number of Elements :

1

Power Dissipation (Max) :

300W (Tc)

Terminal Position :

Single

Vgs(th) (Max) @ Id :

4V @ 250µA

Channel Mode :

Enhancement

Product Category :

MOSFET

Package Shape :

RECTANGULAR

Minimum Operating Temperature :

- 55 C

Drain to Source Breakdown Voltage :

250V

Transistor Type :

1 N-Channel

Package / Case :

TO-247-3

Mounting Type :

Through Hole

Power Dissipation-Max :

300W Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Maximum Operating Temperature :

+ 150 C

Supplier Device Package :

TO-247 (IXTH)

Fall Time (Typ) :

17 ns

Transistor Polarity :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Package :

Tube

Width :

5.3 mm

Polarity/Channel Type :

N-Channel

JEDEC-95 Code :

TO-247AD

Reach Compliance Code :

Compliant

Terminal Form :

THROUGH-HOLE

Pulsed Drain Current-Max (IDM) :

164A

Series :

-

FET Type :

N-Channel

Length :

16.26 mm

Number of Terminals :

3

Height :

21.46 mm

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Drain to Source Voltage (Vdss) :

250V

JESD-30 Code :

R-PSFM-T3

Turn-Off Delay Time :

79 ns

Avalanche Energy Rating (Eas) :

1000 mJ

Input Capacitance (Ciss) (Max) @ Vds :

3200pF @ 25V

Mounting Style :

Through Hole

Surface Mount :

No

Transistor Application :

SWITCHING

Product Type :

MOSFET

Current - Continuous Drain (Id) @ 25°C :

41A Tc

Element Configuration :

Single

Case Connection :

DRAIN

Transistor Element Material :

SILICON

Number of Terminations :

3

Brand :

IXYS

Base Product Number :

IXTH41

Rise Time :

19ns

Packaging :

Tube

Pin Count :

3

Product Status :

Active

Number of Channels :

1 Channel

Gate to Source Voltage (Vgs) :

20V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Subcategory :

MOSFETs

Manufacturer :

IXYS

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

72m Ω @ 15A, 10V

RoHS Status :

ROHS3 Compliant

Number of Pins :

3

ECCN Code :

EAR99

DS Breakdown Voltage-Min :

250 V

FET Feature :

-

Configuration :

Single

Power Dissipation :

300W