IXTH40N30

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Mfr.Part #
IXTH40N30
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 300V 40A TO247
Stock
46,873
In Stock :
46,873

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Polarity/Channel Type :
N-Channel
Height :
21.46 mm
Operating Temperature :
-55°C~150°C TJ
Drain-source On Resistance-Max :
0.085 Ω
Reach Compliance Code :
not_compliant
Configuration :
Single
Transistor Element Material :
SILICON
RoHS Status :
ROHS3 Compliant
Element Configuration :
Single
Number of Terminals :
3
Number of Elements :
1
Rise Time :
40ns
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max :
300W Tc
Brand :
IXYS
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Pulsed Drain Current-Max (IDM) :
160 A
Factory Lead Time :
8 Weeks
Base Product Number :
IXTH40
Gate to Source Voltage (Vgs) :
20V
Manufacturer :
IXYS
Current Rating :
40A
Fall Time (Typ) :
40 ns
Product Category :
MOSFET
Nominal Vgs :
4 V
Transistor Application :
SWITCHING
Continuous Drain Current (ID) :
40A
FET Feature :
--
REACH SVHC :
Unknown
Published :
2000
Number of Channels :
1 Channel
Pin Count :
3
Surface Mount :
No
Vgs (Max) :
±20V
Number of Pins :
3
Maximum Operating Temperature :
+ 150 C
Qualification Status :
Not Qualified
Dual Supply Voltage :
300V
JESD-30 Code :
R-PSFM-T3
Gate Charge (Qg) (Max) @ Vgs :
220nC @ 10V
Package Shape :
RECTANGULAR
Drain to Source Breakdown Voltage :
300V
Resistance :
85mOhm
Series :
MegaMOS™
Transistor Polarity :
N-Channel
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
ECCN Code :
EAR99
Packaging :
Tube
Width :
5.3 mm
Terminal Position :
Single
Moisture Sensitivity Level (MSL) :
Not Applicable
JEDEC-95 Code :
TO-247AD
Length :
16.26 mm
Product Status :
Not For New Designs
Drain to Source Voltage (Vdss) :
300V
Threshold Voltage :
4V
Product Type :
MOSFET
Rds On (Max) @ Id, Vgs :
85m Ω @ 500mA, 10V
Radiation Hardening :
No
Supplier Device Package :
TO-247 (IXTH)
Drive Voltage (Max Rds On,Min Rds On) :
10V
Package :
Tube
Turn-Off Delay Time :
75 ns
Power Dissipation (Max) :
300W (Tc)
Mounting Type :
Through Hole
Power Dissipation-Max (Abs) :
250 W
DS Breakdown Voltage-Min :
300 V
Power Dissipation Ambient-Max :
300 W
FET Type :
N-Channel
Minimum Operating Temperature :
- 55 C
Power Dissipation :
300W
JESD-609 Code :
e1
Lead Free :
Lead Free
Package / Case :
TO-247-3
Vgs(th) (Max) @ Id :
4V @ 250µA
Terminal Form :
THROUGH-HOLE
Voltage - Rated DC :
300V
Pbfree Code :
yes
Channel Mode :
Enhancement
Operating Mode :
ENHANCEMENT MODE
Drain Current-Max (Abs) (ID) :
40 A
Mounting Style :
Through Hole
Input Capacitance (Ciss) (Max) @ Vds :
4600pF @ 25V
Number of Terminations :
3
Mount :
Through Hole
Transistor Type :
1 N-Channel
Current - Continuous Drain (Id) @ 25°C :
40A Tc
Case Connection :
DRAIN
Datasheets
IXTH40N30
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTH40N30 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Channels:1 Channel, Number of Pins:3, Mounting Type:Through Hole, Package / Case:TO-247-3, Number of Terminations:3, IXTH40N30 pinout, IXTH40N30 datasheet PDF, IXTH40N30 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTH40N30 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTH40N30


N-Channel Tube 85m Ω @ 500mA, 10V ±20V 4600pF @ 25V 220nC @ 10V 300V TO-247-3

IXTH40N30 Overview


Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 4600pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 40A amps.In this device, the drain-source breakdown voltage is 300V and VGS=300V, so the drain-source breakdown voltage is 300V in this case.A device can conduct a maximum continuous current of [40 A] according to its drain current.It is [75 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 160 A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 4V.The DS breakdown voltage should be maintained above 300 V to maintain normal operation.To operate this transistor, you will need a 300V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).

IXTH40N30 Features


a continuous drain current (ID) of 40A
a drain-to-source breakdown voltage of 300V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 160 A.
a threshold voltage of 4V
a 300V drain to source voltage (Vdss)


IXTH40N30 Applications


There are a lot of IXYS
IXTH40N30 applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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