IXTH40N30
- Mfr.Part #
- IXTH40N30
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 300V 40A TO247
- Stock
- 46,873
- In Stock :
- 46,873
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Polarity/Channel Type :
- N-Channel
- Height :
- 21.46 mm
- Operating Temperature :
- -55°C~150°C TJ
- Drain-source On Resistance-Max :
- 0.085 Ω
- Reach Compliance Code :
- not_compliant
- Configuration :
- Single
- Transistor Element Material :
- SILICON
- RoHS Status :
- ROHS3 Compliant
- Element Configuration :
- Single
- Number of Terminals :
- 3
- Number of Elements :
- 1
- Rise Time :
- 40ns
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Power Dissipation-Max :
- 300W Tc
- Brand :
- IXYS
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Pulsed Drain Current-Max (IDM) :
- 160 A
- Factory Lead Time :
- 8 Weeks
- Base Product Number :
- IXTH40
- Gate to Source Voltage (Vgs) :
- 20V
- Manufacturer :
- IXYS
- Current Rating :
- 40A
- Fall Time (Typ) :
- 40 ns
- Product Category :
- MOSFET
- Nominal Vgs :
- 4 V
- Transistor Application :
- SWITCHING
- Continuous Drain Current (ID) :
- 40A
- FET Feature :
- --
- REACH SVHC :
- Unknown
- Published :
- 2000
- Number of Channels :
- 1 Channel
- Pin Count :
- 3
- Surface Mount :
- No
- Vgs (Max) :
- ±20V
- Number of Pins :
- 3
- Maximum Operating Temperature :
- + 150 C
- Qualification Status :
- Not Qualified
- Dual Supply Voltage :
- 300V
- JESD-30 Code :
- R-PSFM-T3
- Gate Charge (Qg) (Max) @ Vgs :
- 220nC @ 10V
- Package Shape :
- RECTANGULAR
- Drain to Source Breakdown Voltage :
- 300V
- Resistance :
- 85mOhm
- Series :
- MegaMOS™
- Transistor Polarity :
- N-Channel
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- ECCN Code :
- EAR99
- Packaging :
- Tube
- Width :
- 5.3 mm
- Terminal Position :
- Single
- Moisture Sensitivity Level (MSL) :
- Not Applicable
- JEDEC-95 Code :
- TO-247AD
- Length :
- 16.26 mm
- Product Status :
- Not For New Designs
- Drain to Source Voltage (Vdss) :
- 300V
- Threshold Voltage :
- 4V
- Product Type :
- MOSFET
- Rds On (Max) @ Id, Vgs :
- 85m Ω @ 500mA, 10V
- Radiation Hardening :
- No
- Supplier Device Package :
- TO-247 (IXTH)
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Package :
- Tube
- Turn-Off Delay Time :
- 75 ns
- Power Dissipation (Max) :
- 300W (Tc)
- Mounting Type :
- Through Hole
- Power Dissipation-Max (Abs) :
- 250 W
- DS Breakdown Voltage-Min :
- 300 V
- Power Dissipation Ambient-Max :
- 300 W
- FET Type :
- N-Channel
- Minimum Operating Temperature :
- - 55 C
- Power Dissipation :
- 300W
- JESD-609 Code :
- e1
- Lead Free :
- Lead Free
- Package / Case :
- TO-247-3
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Terminal Form :
- THROUGH-HOLE
- Voltage - Rated DC :
- 300V
- Pbfree Code :
- yes
- Channel Mode :
- Enhancement
- Operating Mode :
- ENHANCEMENT MODE
- Drain Current-Max (Abs) (ID) :
- 40 A
- Mounting Style :
- Through Hole
- Input Capacitance (Ciss) (Max) @ Vds :
- 4600pF @ 25V
- Number of Terminations :
- 3
- Mount :
- Through Hole
- Transistor Type :
- 1 N-Channel
- Current - Continuous Drain (Id) @ 25°C :
- 40A Tc
- Case Connection :
- DRAIN
- Datasheets
- IXTH40N30
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N-Channel Tube 85m Ω @ 500mA, 10V ±20V 4600pF @ 25V 220nC @ 10V 300V TO-247-3
IXTH40N30 Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 4600pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 40A amps.In this device, the drain-source breakdown voltage is 300V and VGS=300V, so the drain-source breakdown voltage is 300V in this case.A device can conduct a maximum continuous current of [40 A] according to its drain current.It is [75 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 160 A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 4V.The DS breakdown voltage should be maintained above 300 V to maintain normal operation.To operate this transistor, you will need a 300V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
IXTH40N30 Features
a continuous drain current (ID) of 40A
a drain-to-source breakdown voltage of 300V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 160 A.
a threshold voltage of 4V
a 300V drain to source voltage (Vdss)
IXTH40N30 Applications
There are a lot of IXYS
IXTH40N30 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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