IXTH3N150
- Mfr.Part #
- IXTH3N150
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 1500V 3A TO247
- Stock
- 41,391
- In Stock :
- 41,391
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Temperature :
- -55°C~150°C TJ
- Current - Continuous Drain (Id) @ 25°C :
- 3A Tc
- Terminal Position :
- Single
- RoHS Status :
- ROHS3 Compliant
- DS Breakdown Voltage-Min :
- 1500V
- Maximum Operating Temperature :
- + 150 C
- JEDEC-95 Code :
- TO-247AD
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Case Connection :
- DRAIN
- Input Capacitance (Ciss) (Max) @ Vds :
- 1375pF @ 25V
- Reach Compliance Code :
- Unknown
- Product Status :
- Active
- Number of Elements :
- 1
- Qualification Status :
- Not Qualified
- Pulsed Drain Current-Max (IDM) :
- 9A
- FET Feature :
- --
- Channel Mode :
- Enhancement
- FET Type :
- N-Channel
- Number of Pins :
- 3
- Minimum Operating Temperature :
- - 55 C
- Avalanche Energy Rating (Eas) :
- 250 mJ
- Transistor Application :
- SWITCHING
- RoHS :
- Details
- Product Type :
- MOSFET
- Vgs (Max) :
- ±30V
- Manufacturer :
- IXYS
- Continuous Drain Current (ID) :
- 3A
- Drain to Source Voltage (Vdss) :
- 1500V
- Mount :
- Through Hole
- Package / Case :
- TO-247-3
- Pin Count :
- 3
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Package :
- Tube
- Supplier Device Package :
- TO-247 (IXTH)
- Packaging :
- Tube
- Series :
- --
- Mounting Style :
- Through Hole
- Factory Lead Time :
- 28 Weeks
- Number of Channels :
- 1 Channel
- Number of Terminations :
- 3
- Additional Feature :
- AVALANCHE RATED
- Operating Mode :
- ENHANCEMENT MODE
- Power Dissipation-Max :
- 250W Tc
- Product Category :
- MOSFET
- Drain Current-Max (Abs) (ID) :
- 3A
- Base Product Number :
- IXTH3
- Transistor Type :
- 1 N-Channel
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Power Dissipation (Max) :
- 250W (Tc)
- Rds On (Max) @ Id, Vgs :
- 7.3 Ω @ 1.5A, 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Brand :
- IXYS
- Mounting Type :
- Through Hole
- Transistor Element Material :
- SILICON
- Published :
- 2012
- Gate Charge (Qg) (Max) @ Vgs :
- 38.6nC @ 10V
- Transistor Polarity :
- N-Channel
- Datasheets
- IXTH3N150
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N-Channel Tube 7.3 Ω @ 1.5A, 10V ±30V 1375pF @ 25V 38.6nC @ 10V 1500V TO-247-3
IXTH3N150 Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 250 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 1375pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 3A.3A is the drain current of this device, which is the maximum continuous current transistor can carry.Peak drain current for this device is 9A, which is its maximum pulsed drain current.To maintain normal operation, the DS breakdown voltage should be kept above 1500V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 1500V.Using drive voltage (10V) reduces this device's overall power consumption.
IXTH3N150 Features
the avalanche energy rating (Eas) is 250 mJ
a continuous drain current (ID) of 3A
based on its rated peak drain current 9A.
a 1500V drain to source voltage (Vdss)
IXTH3N150 Applications
There are a lot of IXYS
IXTH3N150 applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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