IXTH3N120

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Surface Mount :

No

Number of Terminals :

3

Transistor Type :

1 N-Channel

Fall Time (Typ) :

18 ns

Power Dissipation (Max) :

200W (Tc)

Terminal Form :

THROUGH-HOLE

Series :

--

Product Category :

MOSFET

Current - Continuous Drain (Id) @ 25°C :

3A Tc

Product Status :

Active

Mounting Style :

Through Hole

JESD-30 Code :

R-PSFM-T3

Additional Feature :

AVALANCHE RATED

Number of Terminations :

3

Element Configuration :

Single

FET Feature :

--

Number of Channels :

1 Channel

Power Dissipation :

150W

Gate to Source Voltage (Vgs) :

20V

Mount :

Through Hole

Product Type :

MOSFET

RoHS Status :

ROHS3 Compliant

JEDEC-95 Code :

TO-247AD

Qualification Status :

Not Qualified

Transistor Polarity :

N-Channel

Subcategory :

MOSFETs

Base Product Number :

IXTH3

Pulsed Drain Current-Max (IDM) :

12A

Drain-source On Resistance-Max :

4.5 Ω

Width :

5.3 mm

Factory Lead Time :

28 Weeks

Polarity/Channel Type :

N-Channel

Vgs (Max) :

±20V

Number of Elements :

1

Package Shape :

RECTANGULAR

Supplier Device Package :

TO-247 (IXTH)

Packaging :

Tube

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2003

Manufacturer :

IXYS

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rise Time :

15ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Case Connection :

DRAIN

Pin Count :

3

Avalanche Energy Rating (Eas) :

700 mJ

Turn-Off Delay Time :

32 ns

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Drain to Source Voltage (Vdss) :

1200V

Operating Temperature :

-55°C~150°C TJ

Terminal Position :

Single

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Brand :

IXYS

Drain to Source Breakdown Voltage :

1.2kV

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Continuous Drain Current (ID) :

3A

Power Dissipation-Max :

200W Tc

Pbfree Code :

yes

Rds On (Max) @ Id, Vgs :

4.5 Ω @ 500mA, 10V

Length :

16.26 mm

Mounting Type :

Through Hole

Configuration :

Single

FET Type :

N-Channel

Reach Compliance Code :

Compliant

Minimum Operating Temperature :

- 55 C

DS Breakdown Voltage-Min :

1200 V

Gate Charge (Qg) (Max) @ Vgs :

39nC @ 10V

Package :

Box

Type :

High Voltage Power MOSFET

Maximum Operating Temperature :

+ 150 C

Drain Current-Max (Abs) (ID) :

3A

Package / Case :

TO-247-3

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Transistor Application :

SWITCHING

JESD-609 Code :

e1

RoHS :

Details

Height :

21.46 mm

Input Capacitance (Ciss) (Max) @ Vds :

1300pF @ 25V

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Channel Mode :

Enhancement