IXTH3N120

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Avalanche Energy Rating (Eas) :

700 mJ

JEDEC-95 Code :

TO-247AD

Additional Feature :

AVALANCHE RATED

Height :

21.46 mm

Terminal Form :

THROUGH-HOLE

Case Connection :

DRAIN

Configuration :

Single

Continuous Drain Current (ID) :

3A

Pulsed Drain Current-Max (IDM) :

12A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Length :

16.26 mm

Mount :

Through Hole

Manufacturer :

IXYS

Channel Mode :

Enhancement

Product Status :

Active

Fall Time (Typ) :

18 ns

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code :

e1

Drain-source On Resistance-Max :

4.5 Ω

Number of Terminals :

3

Package / Case :

TO-247-3

Reach Compliance Code :

Compliant

Transistor Element Material :

SILICON

Number of Terminations :

3

Package Shape :

RECTANGULAR

JESD-30 Code :

R-PSFM-T3

Polarity/Channel Type :

N-Channel

Rds On (Max) @ Id, Vgs :

4.5 Ω @ 500mA, 10V

Product Category :

MOSFET

Mounting Style :

Through Hole

Vgs (Max) :

±20V

Qualification Status :

Not Qualified

Element Configuration :

Single

Minimum Operating Temperature :

- 55 C

Type :

High Voltage Power MOSFET

Packaging :

Tube

Number of Channels :

1 Channel

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Power Dissipation :

150W

Operating Temperature :

-55°C~150°C TJ

Subcategory :

MOSFETs

Package :

Box

Published :

2003

RoHS :

Details

Drive Voltage (Max Rds On,Min Rds On) :

10V

Base Product Number :

IXTH3

Drain Current-Max (Abs) (ID) :

3A

Surface Mount :

No

Supplier Device Package :

TO-247 (IXTH)

RoHS Status :

ROHS3 Compliant

Mounting Type :

Through Hole

FET Feature :

--

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Maximum Operating Temperature :

+ 150 C

Product Type :

MOSFET

FET Type :

N-Channel

DS Breakdown Voltage-Min :

1200 V

Turn-Off Delay Time :

32 ns

Series :

--

Number of Elements :

1

Drain to Source Voltage (Vdss) :

1200V

Pin Count :

3

Drain to Source Breakdown Voltage :

1.2kV

Rise Time :

15ns

Current - Continuous Drain (Id) @ 25°C :

3A Tc

Transistor Polarity :

N-Channel

Power Dissipation-Max :

200W Tc

Operating Mode :

ENHANCEMENT MODE

Transistor Type :

1 N-Channel

Factory Lead Time :

28 Weeks

Gate to Source Voltage (Vgs) :

20V

Pbfree Code :

yes

Power Dissipation (Max) :

200W (Tc)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Brand :

IXYS

Width :

5.3 mm

Terminal Position :

Single

Gate Charge (Qg) (Max) @ Vgs :

39nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

1300pF @ 25V