IXTH3N100P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

Pbfree Code :

yes

Input Capacitance (Ciss) (Max) @ Vds :

1100pF @ 25V

Drain Current-Max (Abs) (ID) :

3A

Brand :

IXYS

Power Dissipation-Max (Abs) :

125 W

Polarity/Channel Type :

N-Channel

Element Configuration :

Single

Power Dissipation (Max) :

125W (Tc)

Configuration :

Single

Drain to Source Voltage (Vdss) :

1000V

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

RoHS :

Details

Additional Feature :

AVALANCHE RATED

Mount :

Through Hole

Reach Compliance Code :

Compliant

Mounting Style :

Through Hole

Number of Terminals :

3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Surface Mount :

No

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Terminal Position :

Single

Factory Lead Time :

28 Weeks

Turn-Off Delay Time :

75 ns

Avalanche Energy Rating (Eas) :

200 mJ

Product Status :

Active

Transistor Polarity :

N-Channel

Length :

16.26 mm

Transistor Type :

1 N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

RoHS Status :

ROHS3 Compliant

JEDEC-95 Code :

TO-247AD

Qualification Status :

Not Qualified

Pulsed Drain Current-Max (IDM) :

6A

Power Dissipation-Max :

125W Tc

Product Type :

MOSFET

Pin Count :

3

Rds On (Max) @ Id, Vgs :

4.8 Ω @ 1.5A, 10V

Current - Continuous Drain (Id) @ 25°C :

3A Tc

Height :

21.46 mm

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Mounting Type :

Through Hole

Transistor Application :

SWITCHING

Series :

PolarVHV™

FET Feature :

--

Package / Case :

TO-247-3

Drain-source On Resistance-Max :

4.8 Ω

JESD-30 Code :

R-PSFM-T3

Rise Time :

27ns

Transistor Element Material :

SILICON

Base Product Number :

IXTH3

Drain to Source Breakdown Voltage :

1kV

Width :

5.3 mm

Channel Mode :

Enhancement

Maximum Operating Temperature :

+ 150 C

JESD-609 Code :

e1

Fall Time (Typ) :

29 ns

Operating Mode :

ENHANCEMENT MODE

Package :

Tube

Number of Channels :

1 Channel

Manufacturer :

IXYS

Terminal Form :

THROUGH-HOLE

Case Connection :

DRAIN

Operating Temperature :

-55°C~150°C TJ

FET Type :

N-Channel

Number of Elements :

1

Continuous Drain Current (ID) :

3A

Packaging :

Tube

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Product Category :

MOSFET

Published :

2008

Gate to Source Voltage (Vgs) :

20V

Minimum Operating Temperature :

- 55 C

Package Shape :

RECTANGULAR

DS Breakdown Voltage-Min :

1000 V

Supplier Device Package :

TO-247 (IXTH)

Gate Charge (Qg) (Max) @ Vgs :

39nC @ 10V

Power Dissipation :

125W

Number of Terminations :

3