IXTH3N100P

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Mfr.Part #
IXTH3N100P
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 1000V 3A TO247
Stock
2
In Stock :
2

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Product Status :
Active
Vgs (Max) :
±20V
Mounting Type :
Through Hole
Current - Continuous Drain (Id) @ 25°C :
3A Tc
Operating Temperature :
-55°C~150°C TJ
Pin Count :
3
FET Feature :
--
Power Dissipation-Max :
125W Tc
Number of Elements :
1
RoHS Status :
ROHS3 Compliant
Power Dissipation-Max (Abs) :
125 W
Rise Time :
27ns
Terminal Form :
THROUGH-HOLE
Transistor Element Material :
SILICON
Power Dissipation :
125W
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
DS Breakdown Voltage-Min :
1000 V
Series :
PolarVHV™
Height :
21.46 mm
Continuous Drain Current (ID) :
3A
JESD-30 Code :
R-PSFM-T3
Drain Current-Max (Abs) (ID) :
3A
Drive Voltage (Max Rds On,Min Rds On) :
10V
Channel Mode :
Enhancement
Drain to Source Breakdown Voltage :
1kV
Polarity/Channel Type :
N-Channel
Supplier Device Package :
TO-247 (IXTH)
Drain to Source Voltage (Vdss) :
1000V
Gate to Source Voltage (Vgs) :
20V
Terminal Position :
Single
Product Category :
MOSFET
Operating Mode :
ENHANCEMENT MODE
Base Product Number :
IXTH3
Number of Channels :
1 Channel
Power Dissipation (Max) :
125W (Tc)
Maximum Operating Temperature :
+ 150 C
Input Capacitance (Ciss) (Max) @ Vds :
1100pF @ 25V
JEDEC-95 Code :
TO-247AD
Configuration :
Single
Packaging :
Tube
Element Configuration :
Single
Number of Terminals :
3
RoHS :
Details
Package Shape :
RECTANGULAR
Factory Lead Time :
28 Weeks
JESD-609 Code :
e1
Product Type :
MOSFET
Rds On (Max) @ Id, Vgs :
4.8 Ω @ 1.5A, 10V
Gate Charge (Qg) (Max) @ Vgs :
39nC @ 10V
Qualification Status :
Not Qualified
Package :
Tube
Transistor Type :
1 N-Channel
Avalanche Energy Rating (Eas) :
200 mJ
Pbfree Code :
yes
Manufacturer :
IXYS
Published :
2008
Additional Feature :
AVALANCHE RATED
Transistor Application :
SWITCHING
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Mount :
Through Hole
Mounting Style :
Through Hole
Reach Compliance Code :
Compliant
Case Connection :
DRAIN
Fall Time (Typ) :
29 ns
Surface Mount :
No
Minimum Operating Temperature :
- 55 C
Width :
5.3 mm
Pulsed Drain Current-Max (IDM) :
6A
FET Technology :
METAL-OXIDE SEMICONDUCTOR
FET Type :
N-Channel
Brand :
IXYS
Turn-Off Delay Time :
75 ns
Number of Terminations :
3
Vgs(th) (Max) @ Id :
4.5V @ 250μA
Length :
16.26 mm
Transistor Polarity :
N-Channel
Drain-source On Resistance-Max :
4.8 Ω
Package / Case :
TO-247-3
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTH3N100P from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, Number of Channels:1 Channel, Number of Terminations:3, Package / Case:TO-247-3, IXTH3N100P pinout, IXTH3N100P datasheet PDF, IXTH3N100P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTH3N100P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTH3N100P


N-Channel Tube 4.8 Ω @ 1.5A, 10V ±20V 1100pF @ 25V 39nC @ 10V 1000V TO-247-3

IXTH3N100P Overview


Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 200 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 1100pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 3A.With a drain-source breakdown voltage of 1kV and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 1kV.3A is the drain current of this device, which is the maximum continuous current transistor can carry.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 75 ns.Peak drain current for this device is 6A, which is its maximum pulsed drain current.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 1000 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 1000V.Using drive voltage (10V) reduces this device's overall power consumption.

IXTH3N100P Features


the avalanche energy rating (Eas) is 200 mJ
a continuous drain current (ID) of 3A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 6A.
a 1000V drain to source voltage (Vdss)


IXTH3N100P Applications


There are a lot of IXYS
IXTH3N100P applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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