IXTH36P10
- Mfr.Part #
- IXTH36P10
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET P-CH 100V 36A TO247
- Stock
- 46,905
- In Stock :
- 46,905
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate Charge (Qg) (Max) @ Vgs :
- 95nC @ 10V
- Mount :
- Through Hole
- DS Breakdown Voltage-Min :
- 100 V
- Mounting Style :
- Through Hole
- Packaging :
- Tube
- FET Feature :
- --
- Supplier Device Package :
- TO-247 (IXTH)
- Base Product Number :
- IXTH36
- Turn-Off Delay Time :
- 65 ns
- Manufacturer :
- IXYS
- ECCN Code :
- EAR99
- Minimum Operating Temperature :
- - 55 C
- Transistor Polarity :
- P-Channel
- Package / Case :
- TO-247-3
- Pulsed Drain Current-Max (IDM) :
- 144A
- Package Shape :
- RECTANGULAR
- Maximum Operating Temperature :
- + 150 C
- Additional Feature :
- AVALANCHE RATED
- JESD-30 Code :
- R-PSFM-T3
- FET Type :
- P-Channel
- Qualification Status :
- Not Qualified
- Element Configuration :
- Single
- Length :
- 16.26 mm
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- JEDEC-95 Code :
- TO-247AD
- Transistor Application :
- SWITCHING
- Drain to Source Breakdown Voltage :
- -100V
- Input Capacitance (Ciss) (Max) @ Vds :
- 2800pF @ 25V
- Product Status :
- Active
- Power Dissipation-Max :
- 180W Tc
- Transistor Element Material :
- SILICON
- Power Dissipation (Max) :
- 180W (Tc)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Position :
- Single
- Brand :
- IXYS
- Power Dissipation-Max (Abs) :
- 180 W
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- -55°C~150°C TJ
- RoHS :
- Details
- Surface Mount :
- No
- Rise Time :
- 37ns
- Number of Elements :
- 1
- Factory Lead Time :
- 24 Weeks
- Width :
- 5.3 mm
- Product Type :
- MOSFET
- Mounting Type :
- Through Hole
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Transistor Type :
- 1 P-Channel
- Package :
- Tube
- Operating Mode :
- ENHANCEMENT MODE
- Fall Time (Typ) :
- 28 ns
- Drain-source On Resistance-Max :
- 0.075Ohm
- Terminal Form :
- THROUGH-HOLE
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Published :
- 2002
- Vgs (Max) :
- ±20V
- Number of Channels :
- 1 Channel
- Pbfree Code :
- yes
- Drain Current-Max (Abs) (ID) :
- 36 A
- Number of Pins :
- 3
- Number of Terminals :
- 3
- Series :
- --
- Continuous Drain Current (ID) :
- 36A
- Number of Terminations :
- 3
- Reach Compliance Code :
- Compliant
- Configuration :
- Single
- Gate to Source Voltage (Vgs) :
- 20V
- Case Connection :
- DRAIN
- Channel Mode :
- Enhancement
- Drain to Source Voltage (Vdss) :
- 100V
- Product Category :
- MOSFET
- Rds On (Max) @ Id, Vgs :
- 75m Ω @ 18A, 10V
- Power Dissipation :
- 180W
- Polarity/Channel Type :
- P-Channel
- Current - Continuous Drain (Id) @ 25°C :
- 36A Tc
- Height :
- 21.46 mm
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Datasheets
- IXTH36P10
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P-Channel Tube 75m Ω @ 18A, 10V ±20V 2800pF @ 25V 95nC @ 10V 100V TO-247-3
IXTH36P10 Overview
A device's maximum input capacitance is 2800pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 36A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=-100V, and this device has a drain-to-source breakdown voltage of -100V voltage.Its drain current is 36 A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 65 ns.Its maximum pulsed drain current is 144A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.For normal operation, maintain the DS breakdown voltage above 100 V.To operate this transistor, you need to apply a 100V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IXTH36P10 Features
a continuous drain current (ID) of 36A
a drain-to-source breakdown voltage of -100V voltage
the turn-off delay time is 65 ns
based on its rated peak drain current 144A.
a 100V drain to source voltage (Vdss)
IXTH36P10 Applications
There are a lot of IXYS
IXTH36P10 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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