IXTH36P10

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Package Shape :

RECTANGULAR

Drain to Source Voltage (Vdss) :

100V

Number of Channels :

1 Channel

Power Dissipation-Max :

180W Tc

Turn-Off Delay Time :

65 ns

RoHS :

Details

JESD-30 Code :

R-PSFM-T3

Configuration :

Single

Pbfree Code :

yes

Number of Terminations :

3

JEDEC-95 Code :

TO-247AD

Mounting Type :

Through Hole

Drain to Source Breakdown Voltage :

-100V

Terminal Position :

Single

Vgs(th) (Max) @ Id :

5V @ 250μA

Transistor Element Material :

SILICON

Power Dissipation (Max) :

180W (Tc)

Number of Elements :

1

ECCN Code :

EAR99

Surface Mount :

No

Reach Compliance Code :

Compliant

Package / Case :

TO-247-3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Maximum Operating Temperature :

+ 150 C

Product Status :

Active

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

--

Continuous Drain Current (ID) :

36A

Mount :

Through Hole

Base Product Number :

IXTH36

Power Dissipation-Max (Abs) :

180 W

Supplier Device Package :

TO-247 (IXTH)

Package :

Tube

Product Type :

MOSFET

Pulsed Drain Current-Max (IDM) :

144A

Factory Lead Time :

24 Weeks

Gate to Source Voltage (Vgs) :

20V

Brand :

IXYS

Terminal Form :

THROUGH-HOLE

Published :

2002

Drain-source On Resistance-Max :

0.075Ohm

Power Dissipation :

180W

Transistor Type :

1 P-Channel

Current - Continuous Drain (Id) @ 25°C :

36A Tc

FET Type :

P-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Pins :

3

Channel Mode :

Enhancement

Fall Time (Typ) :

28 ns

Rds On (Max) @ Id, Vgs :

75m Ω @ 18A, 10V

Transistor Polarity :

P-Channel

Minimum Operating Temperature :

- 55 C

FET Feature :

--

Rise Time :

37ns

Input Capacitance (Ciss) (Max) @ Vds :

2800pF @ 25V

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tube

Mounting Style :

Through Hole

Number of Terminals :

3

Gate Charge (Qg) (Max) @ Vgs :

95nC @ 10V

DS Breakdown Voltage-Min :

100 V

Element Configuration :

Single

Operating Temperature :

-55°C~150°C TJ

Height :

21.46 mm

Polarity/Channel Type :

P-Channel

Qualification Status :

Not Qualified

RoHS Status :

ROHS3 Compliant

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Product Category :

MOSFET

Additional Feature :

AVALANCHE RATED

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain Current-Max (Abs) (ID) :

36 A

Case Connection :

DRAIN

Width :

5.3 mm

Vgs (Max) :

±20V

Manufacturer :

IXYS

Transistor Application :

SWITCHING

Length :

16.26 mm