IXTH36P10

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Mfr.Part #
IXTH36P10
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET P-CH 100V 36A TO247
Stock
46,905
In Stock :
46,905

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Gate Charge (Qg) (Max) @ Vgs :
95nC @ 10V
Mount :
Through Hole
DS Breakdown Voltage-Min :
100 V
Mounting Style :
Through Hole
Packaging :
Tube
FET Feature :
--
Supplier Device Package :
TO-247 (IXTH)
Base Product Number :
IXTH36
Turn-Off Delay Time :
65 ns
Manufacturer :
IXYS
ECCN Code :
EAR99
Minimum Operating Temperature :
- 55 C
Transistor Polarity :
P-Channel
Package / Case :
TO-247-3
Pulsed Drain Current-Max (IDM) :
144A
Package Shape :
RECTANGULAR
Maximum Operating Temperature :
+ 150 C
Additional Feature :
AVALANCHE RATED
JESD-30 Code :
R-PSFM-T3
FET Type :
P-Channel
Qualification Status :
Not Qualified
Element Configuration :
Single
Length :
16.26 mm
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Drive Voltage (Max Rds On,Min Rds On) :
10V
JEDEC-95 Code :
TO-247AD
Transistor Application :
SWITCHING
Drain to Source Breakdown Voltage :
-100V
Input Capacitance (Ciss) (Max) @ Vds :
2800pF @ 25V
Product Status :
Active
Power Dissipation-Max :
180W Tc
Transistor Element Material :
SILICON
Power Dissipation (Max) :
180W (Tc)
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Terminal Position :
Single
Brand :
IXYS
Power Dissipation-Max (Abs) :
180 W
RoHS Status :
ROHS3 Compliant
Operating Temperature :
-55°C~150°C TJ
RoHS :
Details
Surface Mount :
No
Rise Time :
37ns
Number of Elements :
1
Factory Lead Time :
24 Weeks
Width :
5.3 mm
Product Type :
MOSFET
Mounting Type :
Through Hole
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Transistor Type :
1 P-Channel
Package :
Tube
Operating Mode :
ENHANCEMENT MODE
Fall Time (Typ) :
28 ns
Drain-source On Resistance-Max :
0.075Ohm
Terminal Form :
THROUGH-HOLE
Vgs(th) (Max) @ Id :
5V @ 250μA
Published :
2002
Vgs (Max) :
±20V
Number of Channels :
1 Channel
Pbfree Code :
yes
Drain Current-Max (Abs) (ID) :
36 A
Number of Pins :
3
Number of Terminals :
3
Series :
--
Continuous Drain Current (ID) :
36A
Number of Terminations :
3
Reach Compliance Code :
Compliant
Configuration :
Single
Gate to Source Voltage (Vgs) :
20V
Case Connection :
DRAIN
Channel Mode :
Enhancement
Drain to Source Voltage (Vdss) :
100V
Product Category :
MOSFET
Rds On (Max) @ Id, Vgs :
75m Ω @ 18A, 10V
Power Dissipation :
180W
Polarity/Channel Type :
P-Channel
Current - Continuous Drain (Id) @ 25°C :
36A Tc
Height :
21.46 mm
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Datasheets
IXTH36P10
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTH36P10 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-247-3, Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Number of Channels:1 Channel, Number of Pins:3, Number of Terminations:3, IXTH36P10 pinout, IXTH36P10 datasheet PDF, IXTH36P10 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTH36P10 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTH36P10


P-Channel Tube 75m Ω @ 18A, 10V ±20V 2800pF @ 25V 95nC @ 10V 100V TO-247-3

IXTH36P10 Overview


A device's maximum input capacitance is 2800pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 36A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=-100V, and this device has a drain-to-source breakdown voltage of -100V voltage.Its drain current is 36 A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 65 ns.Its maximum pulsed drain current is 144A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.For normal operation, maintain the DS breakdown voltage above 100 V.To operate this transistor, you need to apply a 100V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

IXTH36P10 Features


a continuous drain current (ID) of 36A
a drain-to-source breakdown voltage of -100V voltage
the turn-off delay time is 65 ns
based on its rated peak drain current 144A.
a 100V drain to source voltage (Vdss)


IXTH36P10 Applications


There are a lot of IXYS
IXTH36P10 applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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