IXTH36N50P

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Mfr.Part #
IXTH36N50P
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 500V 36A TO247
Stock
108
In Stock :
108

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Fall Time (Typ) :
21 ns
RoHS :
Details
Mounting Type :
Through Hole
Drive Voltage (Max Rds On,Min Rds On) :
10V
Tradename :
PolarHV
Mount :
Through Hole
Threshold Voltage :
5V
Polarity/Channel Type :
N-Channel
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
JESD-609 Code :
e1
Package Shape :
RECTANGULAR
Type :
PolarHV Power MOSFET
Current Rating :
36A
Pin Count :
3
Vgs (Max) :
±30V
Reach Compliance Code :
Compliant
Nominal Vgs :
5 V
Transistor Application :
SWITCHING
Voltage - Rated DC :
500V
Case Connection :
DRAIN
Turn-Off Delay Time :
75 ns
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Channel Mode :
Enhancement
Height :
21.46 mm
Terminal Position :
Single
Configuration :
Single
Width :
5.3 mm
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Current - Continuous Drain (Id) @ 25°C :
36A Tc
Power Dissipation (Max) :
540W (Tc)
Input Capacitance (Ciss) (Max) @ Vds :
5500pF @ 25V
FET Type :
N-Channel
Lead Free :
Lead Free
Transistor Element Material :
SILICON
Number of Terminals :
3
Continuous Drain Current Id :
36A
Channel Type :
N Channel
Operating Temperature :
-55°C~150°C TJ
Drain to Source Breakdown Voltage :
500V
Element Configuration :
Single
Package / Case :
TO-247-3
Qualification Status :
Not Qualified
Transistor Polarity :
N-Channel
Continuous Drain Current (ID) :
36A
Rise Time :
27ns
Rds On (Max) @ Id, Vgs :
170m Ω @ 500mA, 10V
Gate to Source Voltage (Vgs) :
30V
Transistor Type :
1 N-Channel
JESD-30 Code :
R-PSFM-T3
Subcategory :
MOSFETs
Additional Feature :
AVALANCHE RATED
Avalanche Energy Rating (Eas) :
1500 mJ
Number of Channels :
1 Channel
Power Dissipation :
540W
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Manufacturer :
IXYS
Pbfree Code :
yes
Drain to Source Voltage (Vdss) :
500V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
MSL :
-
Surface Mount :
No
Number of Terminations :
3
Published :
2006
Number of Elements :
1
RoHS Status :
ROHS3 Compliant
DS Breakdown Voltage-Min :
500 V
Resistance :
170mOhm
Package :
Tube
JEDEC-95 Code :
TO-247AD
Qualification :
-
Operating Mode :
ENHANCEMENT MODE
Vgs(th) (Max) @ Id :
5V @ 250μA
Product Type :
MOSFET
Product Category :
MOSFET
Supplier Device Package :
TO-247 (IXTH)
Packaging :
Tube
Length :
16.26 mm
Mounting Style :
Through Hole
REACH SVHC :
No SVHC
Number of Pins :
3
FET Feature :
--
Base Product Number :
IXTH36
Maximum Operating Temperature :
+ 150 C
ECCN Code :
EAR99
Brand :
IXYS
Minimum Operating Temperature :
- 55 C
Power Dissipation-Max :
540W Tc
Gate Charge (Qg) (Max) @ Vgs :
85nC @ 10V
Pulsed Drain Current-Max (IDM) :
108A
Drain-source On Resistance-Max :
0.17 Ω
Product Status :
Active
Terminal Form :
THROUGH-HOLE
Series :
PolarHV™
Datasheets
IXTH36N50P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTH36N50P from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Type:PolarHV Power MOSFET, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-247-3, Number of Channels:1 Channel, Number of Terminations:3, Number of Pins:3, IXTH36N50P pinout, IXTH36N50P datasheet PDF, IXTH36N50P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTH36N50P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTH36N50P


N-Channel Tube 170m Ω @ 500mA, 10V ±30V 5500pF @ 25V 85nC @ 10V 500V TO-247-3

IXTH36N50P Overview


There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 1500 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 5500pF @ 25V.This device has a continuous drain current (ID) of [36A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=500V, the drain-source breakdown voltage is 500V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 75 ns.A maximum pulsed drain current of 108A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 5V.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 500 V.In order to operate this transistor, a voltage of 500V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IXTH36N50P Features


the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 36A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 108A.
a threshold voltage of 5V
a 500V drain to source voltage (Vdss)


IXTH36N50P Applications


There are a lot of IXYS
IXTH36N50P applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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