IXTH36N50P

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Mfr.Part #
IXTH36N50P
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 500V 36A TO247
Stock
108
In Stock :
108

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
DS Breakdown Voltage-Min :
500 V
Package :
Tube
Element Configuration :
Single
Input Capacitance (Ciss) (Max) @ Vds :
5500pF @ 25V
Terminal Form :
THROUGH-HOLE
Pin Count :
3
Pbfree Code :
yes
Reach Compliance Code :
Compliant
Product Type :
MOSFET
Product Status :
Active
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Tradename :
PolarHV
JEDEC-95 Code :
TO-247AD
FET Type :
N-Channel
Resistance :
170mOhm
MSL :
-
JESD-609 Code :
e1
Power Dissipation (Max) :
540W (Tc)
Polarity/Channel Type :
N-Channel
Pulsed Drain Current-Max (IDM) :
108A
Surface Mount :
No
Number of Elements :
1
Rds On (Max) @ Id, Vgs :
170m Ω @ 500mA, 10V
Terminal Position :
Single
Drain to Source Voltage (Vdss) :
500V
Qualification :
-
Mounting Type :
Through Hole
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Series :
PolarHV™
Lead Free :
Lead Free
Voltage - Rated DC :
500V
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Mount :
Through Hole
RoHS :
Details
FET Feature :
--
Packaging :
Tube
Turn-Off Delay Time :
75 ns
Length :
16.26 mm
ECCN Code :
EAR99
Transistor Application :
SWITCHING
Height :
21.46 mm
Case Connection :
DRAIN
Maximum Operating Temperature :
+ 150 C
Gate to Source Voltage (Vgs) :
30V
Mounting Style :
Through Hole
Vgs (Max) :
±30V
Subcategory :
MOSFETs
Continuous Drain Current (ID) :
36A
Transistor Polarity :
N-Channel
Power Dissipation :
540W
Configuration :
Single
Current Rating :
36A
Manufacturer :
IXYS
Drain to Source Breakdown Voltage :
500V
Number of Terminals :
3
Type :
PolarHV Power MOSFET
Current - Continuous Drain (Id) @ 25°C :
36A Tc
RoHS Status :
ROHS3 Compliant
Published :
2006
Continuous Drain Current Id :
36A
Drive Voltage (Max Rds On,Min Rds On) :
10V
REACH SVHC :
No SVHC
Channel Mode :
Enhancement
Threshold Voltage :
5V
Additional Feature :
AVALANCHE RATED
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Power Dissipation-Max :
540W Tc
Qualification Status :
Not Qualified
Drain-source On Resistance-Max :
0.17 Ω
Rise Time :
27ns
Gate Charge (Qg) (Max) @ Vgs :
85nC @ 10V
Transistor Element Material :
SILICON
Width :
5.3 mm
Number of Pins :
3
Number of Terminations :
3
Package Shape :
RECTANGULAR
JESD-30 Code :
R-PSFM-T3
Product Category :
MOSFET
Avalanche Energy Rating (Eas) :
1500 mJ
Package / Case :
TO-247-3
Operating Temperature :
-55°C~150°C TJ
Supplier Device Package :
TO-247 (IXTH)
Minimum Operating Temperature :
- 55 C
Number of Channels :
1 Channel
Transistor Type :
1 N-Channel
Nominal Vgs :
5 V
Brand :
IXYS
Base Product Number :
IXTH36
Vgs(th) (Max) @ Id :
5V @ 250μA
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Channel Type :
N Channel
Operating Mode :
ENHANCEMENT MODE
Fall Time (Typ) :
21 ns
Datasheets
IXTH36N50P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTH36N50P from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Type:PolarHV Power MOSFET, Number of Pins:3, Number of Terminations:3, Package / Case:TO-247-3, Operating Temperature:-55°C~150°C TJ, Number of Channels:1 Channel, IXTH36N50P pinout, IXTH36N50P datasheet PDF, IXTH36N50P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTH36N50P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTH36N50P


N-Channel Tube 170m Ω @ 500mA, 10V ±30V 5500pF @ 25V 85nC @ 10V 500V TO-247-3

IXTH36N50P Overview


There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 1500 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 5500pF @ 25V.This device has a continuous drain current (ID) of [36A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=500V, the drain-source breakdown voltage is 500V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 75 ns.A maximum pulsed drain current of 108A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 5V.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 500 V.In order to operate this transistor, a voltage of 500V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IXTH36N50P Features


the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 36A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 108A.
a threshold voltage of 5V
a 500V drain to source voltage (Vdss)


IXTH36N50P Applications


There are a lot of IXYS
IXTH36N50P applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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