IXTH32P20T
- Mfr.Part #
- IXTH32P20T
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET P-CH 200V 32A TO247
- Stock
- 44,371
- In Stock :
- 44,371
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Avalanche Energy Rating (Eas) :
- 1000 mJ
- FET Type :
- P-Channel
- Brand :
- IXYS
- Power Dissipation-Max :
- 300W Tc
- JEDEC-95 Code :
- TO-247AD
- Operating Mode :
- ENHANCEMENT MODE
- Published :
- 2010
- Qualification Status :
- Not Qualified
- Terminal Position :
- Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 14500pF @ 25V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Base Product Number :
- IXTH32
- Number of Terminals :
- 3
- Current - Continuous Drain (Id) @ 25°C :
- 32A Tc
- Power Dissipation (Max) :
- 300W (Tc)
- Manufacturer :
- IXYS
- Supplier Device Package :
- TO-247 (IXTH)
- Surface Mount :
- No
- Product Status :
- Active
- Number of Elements :
- 1
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Additional Feature :
- AVALANCHE RATED
- JESD-30 Code :
- R-PSFM-T3
- Pulsed Drain Current-Max (IDM) :
- 96A
- Reach Compliance Code :
- Compliant
- Mounting Type :
- Through Hole
- Mounting Style :
- Through Hole
- Transistor Element Material :
- SILICON
- Series :
- TrenchP™
- Drain Current-Max (Abs) (ID) :
- 32 A
- Power Dissipation-Max (Abs) :
- 300 W
- Factory Lead Time :
- 28 Weeks
- Pin Count :
- 3
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- RoHS Status :
- ROHS3 Compliant
- Product Category :
- MOSFET
- Packaging :
- Tube
- ECCN Code :
- EAR99
- Vgs (Max) :
- ±15V
- Mount :
- Through Hole
- Package Shape :
- RECTANGULAR
- Gate Charge (Qg) (Max) @ Vgs :
- 185nC @ 10V
- DS Breakdown Voltage-Min :
- 200V
- Number of Terminations :
- 3
- Terminal Form :
- THROUGH-HOLE
- Continuous Drain Current (ID) :
- 32A
- Transistor Application :
- SWITCHING
- Drain-source On Resistance-Max :
- 0.13Ohm
- Transistor Polarity :
- P-Channel
- Rds On (Max) @ Id, Vgs :
- 130m Ω @ 16A, 10V
- Operating Temperature :
- -55°C~150°C TJ
- Product Type :
- MOSFET
- Package :
- Tube
- RoHS :
- Details
- FET Feature :
- --
- Case Connection :
- DRAIN
- Drain to Source Voltage (Vdss) :
- 200V
- Polarity/Channel Type :
- P-Channel
- Package / Case :
- TO-247-3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- IXTH32P20T
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P-Channel Tube 130m Ω @ 16A, 10V ±15V 14500pF @ 25V 185nC @ 10V 200V TO-247-3
IXTH32P20T Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 1000 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 14500pF @ 25V.This device conducts a continuous drain current (ID) of 32A, which is the maximum continuous current transistor can conduct.The drain current is the maximum continuous current this device can conduct, which is 32 A.Pulsed drain current is maximum rated peak drain current 96A.A normal operation of the DS requires keeping the breakdown voltage above 200V.This transistor requires a drain-source voltage (Vdss) of 200V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IXTH32P20T Features
the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 32A
based on its rated peak drain current 96A.
a 200V drain to source voltage (Vdss)
IXTH32P20T Applications
There are a lot of IXYS
IXTH32P20T applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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