IXTH32P20T
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- Mfr.Part #
- IXTH32P20T
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET P-CH 200V 32A TO247
- Stock
- 44,371
- In Stock ：
- 44,371
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Terminations :
- 3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Through Hole
- Rds On (Max) @ Id, Vgs :
- 130m Ω @ 16A, 10V
- Power Dissipation-Max :
- 300W Tc
- Factory Lead Time :
- 28 Weeks
- Reach Compliance Code :
- Compliant
- Base Product Number :
- IXTH32
- Gate Charge (Qg) (Max) @ Vgs :
- 185nC @ 10V
- Pin Count :
- 3
- Avalanche Energy Rating (Eas) :
- 1000 mJ
- Package :
- Tube
- Brand :
- IXYS
- Package Shape :
- RECTANGULAR
- Continuous Drain Current (ID) :
- 32A
- Drain-source On Resistance-Max :
- 0.13Ohm
- DS Breakdown Voltage-Min :
- 200V
- Product Type :
- MOSFET
- Number of Elements :
- 1
- Qualification Status :
- Not Qualified
- Current - Continuous Drain (Id) @ 25°C :
- 32A Tc
- Transistor Polarity :
- P-Channel
- Mount :
- Through Hole
- Power Dissipation-Max (Abs) :
- 300 W
- Series :
- TrenchP™
- Vgs (Max) :
- ±15V
- Supplier Device Package :
- TO-247 (IXTH)
- Package / Case :
- TO-247-3
- Mounting Style :
- Through Hole
- Transistor Element Material :
- SILICON
- Surface Mount :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation (Max) :
- 300W (Tc)
- Packaging :
- Tube
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- JESD-30 Code :
- R-PSFM-T3
- Pulsed Drain Current-Max (IDM) :
- 96A
- Operating Mode :
- ENHANCEMENT MODE
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Transistor Application :
- SWITCHING
- FET Type :
- P-Channel
- JEDEC-95 Code :
- TO-247AD
- Product Category :
- MOSFET
- Terminal Position :
- Single
- Additional Feature :
- AVALANCHE RATED
- Manufacturer :
- IXYS
- Drain to Source Voltage (Vdss) :
- 200V
- Terminal Form :
- THROUGH-HOLE
- Number of Terminals :
- 3
- Input Capacitance (Ciss) (Max) @ Vds :
- 14500pF @ 25V
- Published :
- 2010
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- ECCN Code :
- EAR99
- Operating Temperature :
- -55°C~150°C TJ
- RoHS :
- Details
- Case Connection :
- DRAIN
- Product Status :
- Active
- Polarity/Channel Type :
- P-Channel
- FET Feature :
- --
- Drain Current-Max (Abs) (ID) :
- 32 A
- Datasheets
- IXTH32P20T
IXTH32P20T Documents
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P-Channel Tube 130m Ω @ 16A, 10V ±15V 14500pF @ 25V 185nC @ 10V 200V TO-247-3
IXTH32P20T Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 1000 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 14500pF @ 25V.This device conducts a continuous drain current (ID) of 32A, which is the maximum continuous current transistor can conduct.The drain current is the maximum continuous current this device can conduct, which is 32 A.Pulsed drain current is maximum rated peak drain current 96A.A normal operation of the DS requires keeping the breakdown voltage above 200V.This transistor requires a drain-source voltage (Vdss) of 200V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IXTH32P20T Features
the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 32A
based on its rated peak drain current 96A.
a 200V drain to source voltage (Vdss)
IXTH32P20T Applications
There are a lot of IXYS
IXTH32P20T applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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