IXTH30N60P
- Mfr.Part #
- IXTH30N60P
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 30A TO247
- Stock
- 482
- In Stock :
- 482
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Terminations :
- 3
- Continuous Drain Current (ID) :
- 30A
- Voltage - Rated DC :
- 600V
- Power Dissipation (Max) :
- 540W (Tc)
- Terminal Form :
- THROUGH-HOLE
- JESD-609 Code :
- e1
- Avalanche Energy Rating (Eas) :
- 1500 mJ
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Number of Pins :
- 3
- Surface Mount :
- No
- Reach Compliance Code :
- Compliant
- Series :
- PolarHV™
- Height :
- 21.46 mm
- Package Shape :
- RECTANGULAR
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate Charge (Qg) (Max) @ Vgs :
- 82nC @ 10V
- Factory Lead Time :
- 28 Weeks
- Additional Feature :
- AVALANCHE RATED
- Current Rating :
- 30A
- Operating Temperature :
- -55°C~150°C TJ
- Polarity/Channel Type :
- N-Channel
- Drain-source On Resistance-Max :
- 0.24Ohm
- Length :
- 16.26 mm
- Subcategory :
- MOSFETs
- Base Product Number :
- IXTH30
- DS Breakdown Voltage-Min :
- 600 V
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Mounting Style :
- Through Hole
- Current - Continuous Drain (Id) @ 25°C :
- 30A Tc
- Vgs (Max) :
- ±30V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Terminal Position :
- Single
- FET Type :
- N-Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 5050pF @ 25V
- Configuration :
- Single
- Power Dissipation-Max :
- 540W Tc
- Qualification Status :
- Not Qualified
- Lead Free :
- Lead Free
- Number of Terminals :
- 3
- Transistor Type :
- 1 N-Channel
- Packaging :
- Tube
- Brand :
- IXYS
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- FET Feature :
- --
- Gate to Source Voltage (Vgs) :
- 30V
- Product Type :
- MOSFET
- Published :
- 2006
- Maximum Operating Temperature :
- + 150 C
- Operating Mode :
- ENHANCEMENT MODE
- Package / Case :
- TO-247-3
- Power Dissipation :
- 540W
- Turn-Off Delay Time :
- 80 ns
- JEDEC-95 Code :
- TO-247AD
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Transistor Application :
- SWITCHING
- Rise Time :
- 20ns
- Transistor Element Material :
- SILICON
- Mounting Type :
- Through Hole
- RoHS :
- Details
- Fall Time (Typ) :
- 25 ns
- Drain to Source Voltage (Vdss) :
- 600V
- JESD-30 Code :
- R-PSFM-T3
- Width :
- 5.3 mm
- Channel Mode :
- Enhancement
- Element Configuration :
- Single
- Manufacturer :
- IXYS
- Transistor Polarity :
- N-Channel
- Number of Channels :
- 1 Channel
- Rds On (Max) @ Id, Vgs :
- 240m Ω @ 15A, 10V
- Type :
- PolarHV Power MOSFET
- Product Status :
- Active
- Minimum Operating Temperature :
- - 55 C
- Package :
- Tube
- Pulsed Drain Current-Max (IDM) :
- 80A
- Pbfree Code :
- yes
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- Supplier Device Package :
- TO-247 (IXTH)
- Product Category :
- MOSFET
- Tradename :
- PolarHV
- Mount :
- Through Hole
- Drain to Source Breakdown Voltage :
- 600V
- Case Connection :
- DRAIN
- Pin Count :
- 3
- Datasheets
- IXTH30N60P
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N-Channel Tube 240m Ω @ 15A, 10V ±30V 5050pF @ 25V 82nC @ 10V 600V TO-247-3
IXTH30N60P Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 1500 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 5050pF @ 25V.This device has a continuous drain current (ID) of [30A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=600V, the drain-source breakdown voltage is 600V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 80 ns.A maximum pulsed drain current of 80A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 600 V.In order to operate this transistor, a voltage of 600V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IXTH30N60P Features
the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 30A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 80 ns
based on its rated peak drain current 80A.
a 600V drain to source voltage (Vdss)
IXTH30N60P Applications
There are a lot of IXYS
IXTH30N60P applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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