IXTH30N60P
- Mfr.Part #
- IXTH30N60P
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 30A TO247
- Stock
- 482
- In Stock :
- 482
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Type :
- 1 N-Channel
- Drain to Source Voltage (Vdss) :
- 600V
- Voltage - Rated DC :
- 600V
- FET Type :
- N-Channel
- Published :
- 2006
- Manufacturer :
- IXYS
- Drain to Source Breakdown Voltage :
- 600V
- Power Dissipation (Max) :
- 540W (Tc)
- Type :
- PolarHV Power MOSFET
- Package / Case :
- TO-247-3
- Subcategory :
- MOSFETs
- Operating Mode :
- ENHANCEMENT MODE
- Brand :
- IXYS
- Power Dissipation :
- 540W
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Number of Terminals :
- 3
- Lead Free :
- Lead Free
- RoHS Status :
- ROHS3 Compliant
- Drain-source On Resistance-Max :
- 0.24Ohm
- Terminal Position :
- Single
- JESD-609 Code :
- e1
- Number of Terminations :
- 3
- Number of Pins :
- 3
- Factory Lead Time :
- 28 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs (Max) :
- ±30V
- JESD-30 Code :
- R-PSFM-T3
- Supplier Device Package :
- TO-247 (IXTH)
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Avalanche Energy Rating (Eas) :
- 1500 mJ
- Continuous Drain Current (ID) :
- 30A
- Current Rating :
- 30A
- Package Shape :
- RECTANGULAR
- Product Type :
- MOSFET
- Series :
- PolarHV™
- Surface Mount :
- No
- Transistor Application :
- SWITCHING
- Case Connection :
- DRAIN
- Pin Count :
- 3
- JEDEC-95 Code :
- TO-247AD
- Product Category :
- MOSFET
- Mounting Type :
- Through Hole
- Channel Mode :
- Enhancement
- Current - Continuous Drain (Id) @ 25°C :
- 30A Tc
- Operating Temperature :
- -55°C~150°C TJ
- Rds On (Max) @ Id, Vgs :
- 240m Ω @ 15A, 10V
- FET Feature :
- --
- Product Status :
- Active
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Additional Feature :
- AVALANCHE RATED
- Qualification Status :
- Not Qualified
- Rise Time :
- 20ns
- Maximum Operating Temperature :
- + 150 C
- Base Product Number :
- IXTH30
- Number of Elements :
- 1
- Input Capacitance (Ciss) (Max) @ Vds :
- 5050pF @ 25V
- Number of Channels :
- 1 Channel
- Power Dissipation-Max :
- 540W Tc
- Height :
- 21.46 mm
- Gate Charge (Qg) (Max) @ Vgs :
- 82nC @ 10V
- Turn-Off Delay Time :
- 80 ns
- Gate to Source Voltage (Vgs) :
- 30V
- Fall Time (Typ) :
- 25 ns
- Configuration :
- Single
- Width :
- 5.3 mm
- Tradename :
- PolarHV
- Pbfree Code :
- yes
- Polarity/Channel Type :
- N-Channel
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Reach Compliance Code :
- Compliant
- Transistor Element Material :
- SILICON
- Transistor Polarity :
- N-Channel
- RoHS :
- Details
- Packaging :
- Tube
- Pulsed Drain Current-Max (IDM) :
- 80A
- DS Breakdown Voltage-Min :
- 600 V
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Length :
- 16.26 mm
- Element Configuration :
- Single
- Terminal Form :
- THROUGH-HOLE
- Mount :
- Through Hole
- Package :
- Tube
- Mounting Style :
- Through Hole
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Minimum Operating Temperature :
- - 55 C
- Datasheets
- IXTH30N60P
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N-Channel Tube 240m Ω @ 15A, 10V ±30V 5050pF @ 25V 82nC @ 10V 600V TO-247-3
IXTH30N60P Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 1500 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 5050pF @ 25V.This device has a continuous drain current (ID) of [30A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=600V, the drain-source breakdown voltage is 600V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 80 ns.A maximum pulsed drain current of 80A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 600 V.In order to operate this transistor, a voltage of 600V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IXTH30N60P Features
the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 30A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 80 ns
based on its rated peak drain current 80A.
a 600V drain to source voltage (Vdss)
IXTH30N60P Applications
There are a lot of IXYS
IXTH30N60P applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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