IXTH30N60P

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Mfr.Part #
IXTH30N60P
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 600V 30A TO247
Stock
482
In Stock :
482

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Transistor Type :
1 N-Channel
Drain to Source Voltage (Vdss) :
600V
Voltage - Rated DC :
600V
FET Type :
N-Channel
Published :
2006
Manufacturer :
IXYS
Drain to Source Breakdown Voltage :
600V
Power Dissipation (Max) :
540W (Tc)
Type :
PolarHV Power MOSFET
Package / Case :
TO-247-3
Subcategory :
MOSFETs
Operating Mode :
ENHANCEMENT MODE
Brand :
IXYS
Power Dissipation :
540W
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Number of Terminals :
3
Lead Free :
Lead Free
RoHS Status :
ROHS3 Compliant
Drain-source On Resistance-Max :
0.24Ohm
Terminal Position :
Single
JESD-609 Code :
e1
Number of Terminations :
3
Number of Pins :
3
Factory Lead Time :
28 Weeks
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Vgs (Max) :
±30V
JESD-30 Code :
R-PSFM-T3
Supplier Device Package :
TO-247 (IXTH)
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Avalanche Energy Rating (Eas) :
1500 mJ
Continuous Drain Current (ID) :
30A
Current Rating :
30A
Package Shape :
RECTANGULAR
Product Type :
MOSFET
Series :
PolarHV™
Surface Mount :
No
Transistor Application :
SWITCHING
Case Connection :
DRAIN
Pin Count :
3
JEDEC-95 Code :
TO-247AD
Product Category :
MOSFET
Mounting Type :
Through Hole
Channel Mode :
Enhancement
Current - Continuous Drain (Id) @ 25°C :
30A Tc
Operating Temperature :
-55°C~150°C TJ
Rds On (Max) @ Id, Vgs :
240m Ω @ 15A, 10V
FET Feature :
--
Product Status :
Active
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Additional Feature :
AVALANCHE RATED
Qualification Status :
Not Qualified
Rise Time :
20ns
Maximum Operating Temperature :
+ 150 C
Base Product Number :
IXTH30
Number of Elements :
1
Input Capacitance (Ciss) (Max) @ Vds :
5050pF @ 25V
Number of Channels :
1 Channel
Power Dissipation-Max :
540W Tc
Height :
21.46 mm
Gate Charge (Qg) (Max) @ Vgs :
82nC @ 10V
Turn-Off Delay Time :
80 ns
Gate to Source Voltage (Vgs) :
30V
Fall Time (Typ) :
25 ns
Configuration :
Single
Width :
5.3 mm
Tradename :
PolarHV
Pbfree Code :
yes
Polarity/Channel Type :
N-Channel
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Reach Compliance Code :
Compliant
Transistor Element Material :
SILICON
Transistor Polarity :
N-Channel
RoHS :
Details
Packaging :
Tube
Pulsed Drain Current-Max (IDM) :
80A
DS Breakdown Voltage-Min :
600 V
Vgs(th) (Max) @ Id :
5V @ 250μA
Length :
16.26 mm
Element Configuration :
Single
Terminal Form :
THROUGH-HOLE
Mount :
Through Hole
Package :
Tube
Mounting Style :
Through Hole
Drive Voltage (Max Rds On,Min Rds On) :
10V
Minimum Operating Temperature :
- 55 C
Datasheets
IXTH30N60P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTH30N60P from Chip IC,where excellence meets affordability. This product stands out with its Type:PolarHV Power MOSFET, Package / Case:TO-247-3, Number of Terminations:3, Number of Pins:3, Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, Number of Channels:1 Channel, IXTH30N60P pinout, IXTH30N60P datasheet PDF, IXTH30N60P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTH30N60P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTH30N60P


N-Channel Tube 240m Ω @ 15A, 10V ±30V 5050pF @ 25V 82nC @ 10V 600V TO-247-3

IXTH30N60P Overview


There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 1500 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 5050pF @ 25V.This device has a continuous drain current (ID) of [30A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=600V, the drain-source breakdown voltage is 600V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 80 ns.A maximum pulsed drain current of 80A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 600 V.In order to operate this transistor, a voltage of 600V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IXTH30N60P Features


the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 30A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 80 ns
based on its rated peak drain current 80A.
a 600V drain to source voltage (Vdss)


IXTH30N60P Applications


There are a lot of IXYS
IXTH30N60P applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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