IXTH30N60P
- Mfr.Part #
- IXTH30N60P
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 30A TO247
- Stock
- 482
- In Stock :
- 482
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Product Category :
- MOSFET
- Voltage - Rated DC :
- 600V
- Terminal Form :
- THROUGH-HOLE
- Base Product Number :
- IXTH30
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Package / Case :
- TO-247-3
- Operating Temperature :
- -55°C~150°C TJ
- Configuration :
- Single
- Series :
- PolarHV™
- Transistor Polarity :
- N-Channel
- Mounting Style :
- Through Hole
- Pbfree Code :
- yes
- Factory Lead Time :
- 28 Weeks
- Current - Continuous Drain (Id) @ 25°C :
- 30A Tc
- Product Status :
- Active
- Maximum Operating Temperature :
- + 150 C
- Power Dissipation (Max) :
- 540W (Tc)
- Package :
- Tube
- Supplier Device Package :
- TO-247 (IXTH)
- RoHS Status :
- ROHS3 Compliant
- Continuous Drain Current (ID) :
- 30A
- Channel Mode :
- Enhancement
- Drain-source On Resistance-Max :
- 0.24Ohm
- Mount :
- Through Hole
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Rds On (Max) @ Id, Vgs :
- 240m Ω @ 15A, 10V
- Power Dissipation :
- 540W
- JEDEC-95 Code :
- TO-247AD
- Rise Time :
- 20ns
- Type :
- PolarHV Power MOSFET
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Qualification Status :
- Not Qualified
- Fall Time (Typ) :
- 25 ns
- Number of Elements :
- 1
- Gate Charge (Qg) (Max) @ Vgs :
- 82nC @ 10V
- Number of Pins :
- 3
- FET Feature :
- --
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Gate to Source Voltage (Vgs) :
- 30V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Pin Count :
- 3
- Tradename :
- PolarHV
- Power Dissipation-Max :
- 540W Tc
- Current Rating :
- 30A
- Packaging :
- Tube
- Number of Terminations :
- 3
- Operating Mode :
- ENHANCEMENT MODE
- Drain to Source Voltage (Vdss) :
- 600V
- Product Type :
- MOSFET
- Avalanche Energy Rating (Eas) :
- 1500 mJ
- Pulsed Drain Current-Max (IDM) :
- 80A
- Transistor Type :
- 1 N-Channel
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Through Hole
- Case Connection :
- DRAIN
- Number of Terminals :
- 3
- FET Type :
- N-Channel
- DS Breakdown Voltage-Min :
- 600 V
- Terminal Position :
- Single
- Width :
- 5.3 mm
- Brand :
- IXYS
- Polarity/Channel Type :
- N-Channel
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Reach Compliance Code :
- Compliant
- Drain to Source Breakdown Voltage :
- 600V
- Number of Channels :
- 1 Channel
- RoHS :
- Details
- Vgs (Max) :
- ±30V
- JESD-609 Code :
- e1
- Transistor Application :
- SWITCHING
- Lead Free :
- Lead Free
- Length :
- 16.26 mm
- Height :
- 21.46 mm
- Element Configuration :
- Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 5050pF @ 25V
- Additional Feature :
- AVALANCHE RATED
- Package Shape :
- RECTANGULAR
- Turn-Off Delay Time :
- 80 ns
- Published :
- 2006
- Subcategory :
- MOSFETs
- Minimum Operating Temperature :
- - 55 C
- Surface Mount :
- No
- Manufacturer :
- IXYS
- Transistor Element Material :
- SILICON
- JESD-30 Code :
- R-PSFM-T3
- Datasheets
- IXTH30N60P
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N-Channel Tube 240m Ω @ 15A, 10V ±30V 5050pF @ 25V 82nC @ 10V 600V TO-247-3
IXTH30N60P Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 1500 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 5050pF @ 25V.This device has a continuous drain current (ID) of [30A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=600V, the drain-source breakdown voltage is 600V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 80 ns.A maximum pulsed drain current of 80A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 600 V.In order to operate this transistor, a voltage of 600V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IXTH30N60P Features
the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 30A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 80 ns
based on its rated peak drain current 80A.
a 600V drain to source voltage (Vdss)
IXTH30N60P Applications
There are a lot of IXYS
IXTH30N60P applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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