IXTH30N60L2
- Mfr.Part #
- IXTH30N60L2
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 30A TO247
- Stock
- 391
- In Stock :
- 391
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Product Category :
- MOSFET
- Series :
- Linear L2™
- Supplier Device Package :
- TO-247 (IXTH)
- Nominal Vgs :
- 2.5 V
- Pulsed Drain Current-Max (IDM) :
- 80A
- Pin Count :
- 3
- Brand :
- IXYS
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 3
- JESD-609 Code :
- e1
- Transistor Type :
- 1 N-Channel
- Number of Elements :
- 1
- Package / Case :
- TO-247-3
- Number of Channels :
- 1 Channel
- Additional Feature :
- AVALANCHE RATED
- Rds On (Max) @ Id, Vgs :
- 240m Ω @ 15A, 10V
- Number of Pins :
- 3
- RoHS Status :
- ROHS3 Compliant
- Rise Time :
- 65 ns
- Qualification Status :
- Not Qualified
- Vgs (Max) :
- ±20V
- Drain to Source Voltage (Vdss) :
- 600V
- Maximum Operating Temperature :
- + 150 C
- Continuous Drain Current (ID) :
- 30A
- Pbfree Code :
- yes
- Operating Temperature :
- -55°C~150°C TJ
- Length :
- 16.26 mm
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Mounting Type :
- Through Hole
- FET Type :
- N-Channel
- Product Status :
- Active
- Turn-Off Delay Time :
- 123 ns
- Minimum Operating Temperature :
- - 55 C
- Power Dissipation :
- 540W
- Input Capacitance (Ciss) (Max) @ Vds :
- 10700pF @ 25V
- Width :
- 5.3 mm
- Gate Charge (Qg) (Max) @ Vgs :
- 335nC @ 10V
- Drain-source On Resistance-Max :
- 0.24Ohm
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Mount :
- Through Hole
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- RoHS :
- Details
- Packaging :
- Tube
- Power Dissipation (Max) :
- 540W (Tc)
- Threshold Voltage :
- 2.5V
- Drain to Source Breakdown Voltage :
- 600V
- Manufacturer :
- IXYS
- Current - Continuous Drain (Id) @ 25°C :
- 30A Tc
- Mounting Style :
- Through Hole
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Tradename :
- Linear L2
- Product Type :
- MOSFET
- FET Feature :
- --
- Transistor Polarity :
- N-Channel
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package :
- Tube
- Case Connection :
- DRAIN
- Factory Lead Time :
- 28 Weeks
- ECCN Code :
- EAR99
- Subcategory :
- MOSFETs
- Published :
- 2001
- Element Configuration :
- Single
- Avalanche Energy Rating (Eas) :
- 2000 mJ
- Base Product Number :
- IXTH30
- Operating Mode :
- ENHANCEMENT MODE
- Height :
- 21.46 mm
- Power Dissipation-Max :
- 540W Tc
- Type :
- Linear L2 Power MOSFET
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Transistor Application :
- SWITCHING
- REACH SVHC :
- No SVHC
- Channel Mode :
- Enhancement
- Configuration :
- Single
- Reach Compliance Code :
- Unknown
- Datasheets
- IXTH30N60L2
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N-Channel Tube 240m Ω @ 15A, 10V ±20V 10700pF @ 25V 335nC @ 10V 600V TO-247-3
IXTH30N60L2 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 2000 mJ.A device's maximum input capacitance is 10700pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 30A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=600V, and this device has a drain-to-source breakdown voltage of 600V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 123 ns.Its maximum pulsed drain current is 80A, which is also its maximum rating peak drainage current.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of 2.5V.To operate this transistor, you need to apply a 600V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IXTH30N60L2 Features
the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 30A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 123 ns
based on its rated peak drain current 80A.
a threshold voltage of 2.5V
a 600V drain to source voltage (Vdss)
IXTH30N60L2 Applications
There are a lot of IXYS
IXTH30N60L2 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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