IXTH30N60L2
- Mfr.Part #
- IXTH30N60L2
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 30A TO247
- Stock
- 391
- In Stock :
- 391
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Subcategory :
- MOSFETs
- Mount :
- Through Hole
- Manufacturer :
- IXYS
- Rise Time :
- 65 ns
- Transistor Polarity :
- N-Channel
- Reach Compliance Code :
- Unknown
- Continuous Drain Current (ID) :
- 30A
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Mounting Style :
- Through Hole
- Power Dissipation :
- 540W
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Avalanche Energy Rating (Eas) :
- 2000 mJ
- Packaging :
- Tube
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Product Category :
- MOSFET
- Operating Temperature :
- -55°C~150°C TJ
- Turn-Off Delay Time :
- 123 ns
- Number of Pins :
- 3
- Tradename :
- Linear L2
- Supplier Device Package :
- TO-247 (IXTH)
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Configuration :
- Single
- Type :
- Linear L2 Power MOSFET
- RoHS Status :
- ROHS3 Compliant
- Rds On (Max) @ Id, Vgs :
- 240m Ω @ 15A, 10V
- Product Status :
- Active
- Drain to Source Breakdown Voltage :
- 600V
- Power Dissipation (Max) :
- 540W (Tc)
- Input Capacitance (Ciss) (Max) @ Vds :
- 10700pF @ 25V
- Additional Feature :
- AVALANCHE RATED
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Transistor Application :
- SWITCHING
- Number of Channels :
- 1 Channel
- Transistor Element Material :
- SILICON
- Published :
- 2001
- Power Dissipation-Max :
- 540W Tc
- RoHS :
- Details
- Qualification Status :
- Not Qualified
- Gate Charge (Qg) (Max) @ Vgs :
- 335nC @ 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Factory Lead Time :
- 28 Weeks
- Drain to Source Voltage (Vdss) :
- 600V
- Pulsed Drain Current-Max (IDM) :
- 80A
- Element Configuration :
- Single
- Number of Elements :
- 1
- Mounting Type :
- Through Hole
- Pin Count :
- 3
- Transistor Type :
- 1 N-Channel
- Operating Mode :
- ENHANCEMENT MODE
- JESD-609 Code :
- e1
- Package :
- Tube
- Vgs (Max) :
- ±20V
- Channel Mode :
- Enhancement
- REACH SVHC :
- No SVHC
- Series :
- Linear L2™
- Minimum Operating Temperature :
- - 55 C
- FET Type :
- N-Channel
- Height :
- 21.46 mm
- Maximum Operating Temperature :
- + 150 C
- Base Product Number :
- IXTH30
- Threshold Voltage :
- 2.5V
- Pbfree Code :
- yes
- Case Connection :
- DRAIN
- Current - Continuous Drain (Id) @ 25°C :
- 30A Tc
- ECCN Code :
- EAR99
- Number of Terminations :
- 3
- Length :
- 16.26 mm
- Drain-source On Resistance-Max :
- 0.24Ohm
- Product Type :
- MOSFET
- Width :
- 5.3 mm
- Nominal Vgs :
- 2.5 V
- Brand :
- IXYS
- Package / Case :
- TO-247-3
- FET Feature :
- --
- Datasheets
- IXTH30N60L2
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N-Channel Tube 240m Ω @ 15A, 10V ±20V 10700pF @ 25V 335nC @ 10V 600V TO-247-3
IXTH30N60L2 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 2000 mJ.A device's maximum input capacitance is 10700pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 30A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=600V, and this device has a drain-to-source breakdown voltage of 600V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 123 ns.Its maximum pulsed drain current is 80A, which is also its maximum rating peak drainage current.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of 2.5V.To operate this transistor, you need to apply a 600V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IXTH30N60L2 Features
the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 30A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 123 ns
based on its rated peak drain current 80A.
a threshold voltage of 2.5V
a 600V drain to source voltage (Vdss)
IXTH30N60L2 Applications
There are a lot of IXYS
IXTH30N60L2 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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