IXTH30N60L2
- Mfr.Part #
- IXTH30N60L2
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 30A TO247
- Stock
- 391
- In Stock :
- 391
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Base Product Number :
- IXTH30
- Drain to Source Breakdown Voltage :
- 600V
- Power Dissipation (Max) :
- 540W (Tc)
- Number of Channels :
- 1 Channel
- Pulsed Drain Current-Max (IDM) :
- 80A
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Application :
- SWITCHING
- JESD-609 Code :
- e1
- FET Type :
- N-Channel
- Series :
- Linear L2™
- Gate Charge (Qg) (Max) @ Vgs :
- 335nC @ 10V
- Package :
- Tube
- Factory Lead Time :
- 28 Weeks
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Brand :
- IXYS
- Minimum Operating Temperature :
- - 55 C
- Channel Mode :
- Enhancement
- Transistor Polarity :
- N-Channel
- Nominal Vgs :
- 2.5 V
- Mounting Style :
- Through Hole
- Operating Temperature :
- -55°C~150°C TJ
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Number of Terminations :
- 3
- Pbfree Code :
- yes
- Additional Feature :
- AVALANCHE RATED
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Maximum Operating Temperature :
- + 150 C
- Drain to Source Voltage (Vdss) :
- 600V
- Power Dissipation-Max :
- 540W Tc
- Qualification Status :
- Not Qualified
- RoHS Status :
- ROHS3 Compliant
- Vgs (Max) :
- ±20V
- Number of Elements :
- 1
- Reach Compliance Code :
- Unknown
- REACH SVHC :
- No SVHC
- Mount :
- Through Hole
- Product Type :
- MOSFET
- Continuous Drain Current (ID) :
- 30A
- Supplier Device Package :
- TO-247 (IXTH)
- Height :
- 21.46 mm
- Transistor Element Material :
- SILICON
- Drain-source On Resistance-Max :
- 0.24Ohm
- Turn-Off Delay Time :
- 123 ns
- Current - Continuous Drain (Id) @ 25°C :
- 30A Tc
- Number of Pins :
- 3
- Product Status :
- Active
- Manufacturer :
- IXYS
- Transistor Type :
- 1 N-Channel
- Subcategory :
- MOSFETs
- Tradename :
- Linear L2
- Rise Time :
- 65 ns
- Case Connection :
- DRAIN
- ECCN Code :
- EAR99
- Rds On (Max) @ Id, Vgs :
- 240m Ω @ 15A, 10V
- Published :
- 2001
- Width :
- 5.3 mm
- Input Capacitance (Ciss) (Max) @ Vds :
- 10700pF @ 25V
- Mounting Type :
- Through Hole
- Pin Count :
- 3
- Avalanche Energy Rating (Eas) :
- 2000 mJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- FET Feature :
- --
- Configuration :
- Single
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Length :
- 16.26 mm
- Threshold Voltage :
- 2.5V
- Product Category :
- MOSFET
- Packaging :
- Tube
- Type :
- Linear L2 Power MOSFET
- RoHS :
- Details
- Power Dissipation :
- 540W
- Element Configuration :
- Single
- Package / Case :
- TO-247-3
- Datasheets
- IXTH30N60L2
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N-Channel Tube 240m Ω @ 15A, 10V ±20V 10700pF @ 25V 335nC @ 10V 600V TO-247-3
IXTH30N60L2 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 2000 mJ.A device's maximum input capacitance is 10700pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 30A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=600V, and this device has a drain-to-source breakdown voltage of 600V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 123 ns.Its maximum pulsed drain current is 80A, which is also its maximum rating peak drainage current.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of 2.5V.To operate this transistor, you need to apply a 600V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IXTH30N60L2 Features
the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 30A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 123 ns
based on its rated peak drain current 80A.
a threshold voltage of 2.5V
a 600V drain to source voltage (Vdss)
IXTH30N60L2 Applications
There are a lot of IXYS
IXTH30N60L2 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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