IXTH30N50P

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Mfr.Part #
IXTH30N50P
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 500V 30A TO247
Stock
30
In Stock :
30

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Additional Feature :
AVALANCHE RATED
Surface Mount :
No
Supplier Device Package :
TO-247 (IXTH)
Operating Temperature :
-55°C~150°C TJ
DS Breakdown Voltage-Min :
500 V
Drain to Source Voltage (Vdss) :
500V
Published :
2006
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Pins :
3
Factory Lead Time :
28 Weeks
Current - Continuous Drain (Id) @ 25°C :
30A Tc
Continuous Drain Current (ID) :
30A
Pulsed Drain Current-Max (IDM) :
75A
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Type :
PolarHV Power MOSFET
Packaging :
Tube
Pbfree Code :
yes
Package Shape :
RECTANGULAR
Subcategory :
MOSFETs
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Vgs (Max) :
±30V
Manufacturer :
IXYS
Lead Free :
Lead Free
JEDEC-95 Code :
TO-247AD
Reach Compliance Code :
Compliant
Mounting Style :
Through Hole
Current Rating :
30A
RoHS :
Details
Number of Elements :
1
Power Dissipation :
460W
Gate to Source Voltage (Vgs) :
30V
Voltage - Rated DC :
500V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Pin Count :
3
Polarity/Channel Type :
N-Channel
Number of Channels :
1 Channel
Case Connection :
DRAIN
Length :
16.26 mm
FET Type :
N-Channel
JESD-30 Code :
R-PSFM-T3
RoHS Status :
ROHS3 Compliant
Brand :
IXYS
Rise Time :
27ns
Package :
Tube
Base Product Number :
IXTH30
Height :
21.46 mm
Product Category :
MOSFET
Product Status :
Active
Gate Charge (Qg) (Max) @ Vgs :
70nC @ 10V
Power Dissipation (Max) :
460W (Tc)
Drain to Source Breakdown Voltage :
500V
Transistor Element Material :
SILICON
Tradename :
PolarHV
FET Feature :
--
Transistor Application :
SWITCHING
Maximum Operating Temperature :
+ 150 C
Input Capacitance (Ciss) (Max) @ Vds :
4150pF @ 25V
Drain-source On Resistance-Max :
0.2Ohm
Power Dissipation-Max :
460W Tc
Width :
5.3 mm
Package / Case :
TO-247-3
Operating Mode :
ENHANCEMENT MODE
Product Type :
MOSFET
Fall Time (Typ) :
21 ns
Qualification Status :
Not Qualified
Mounting Type :
Through Hole
Number of Terminations :
3
Terminal Form :
THROUGH-HOLE
Element Configuration :
Single
Transistor Polarity :
N-Channel
Configuration :
Single
Number of Terminals :
3
Avalanche Energy Rating (Eas) :
1200 mJ
Transistor Type :
1 N-Channel
Series :
PolarHV™
Minimum Operating Temperature :
- 55 C
Turn-Off Delay Time :
75 ns
Channel Mode :
Enhancement
Mount :
Through Hole
Rds On (Max) @ Id, Vgs :
200m Ω @ 15A, 10V
Vgs(th) (Max) @ Id :
5V @ 250μA
Terminal Position :
Single
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTH30N50P from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Pins:3, Type:PolarHV Power MOSFET, Number of Channels:1 Channel, Package / Case:TO-247-3, Mounting Type:Through Hole, Number of Terminations:3, IXTH30N50P pinout, IXTH30N50P datasheet PDF, IXTH30N50P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTH30N50P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTH30N50P


N-Channel Tube 200m Ω @ 15A, 10V ±30V 4150pF @ 25V 70nC @ 10V 500V TO-247-3

IXTH30N50P Overview


There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 1200 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 4150pF @ 25V.This device has a continuous drain current (ID) of [30A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=500V, the drain-source breakdown voltage is 500V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 75 ns.A maximum pulsed drain current of 75A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 500 V.In order to operate this transistor, a voltage of 500V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IXTH30N50P Features


the avalanche energy rating (Eas) is 1200 mJ
a continuous drain current (ID) of 30A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 75A.
a 500V drain to source voltage (Vdss)


IXTH30N50P Applications


There are a lot of IXYS
IXTH30N50P applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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