IXTH30N50P
- Mfr.Part #
- IXTH30N50P
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 30A TO247
- Stock
- 30
- In Stock :
- 30
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Drain to Source Breakdown Voltage :
- 500V
- Terminal Position :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 3
- Power Dissipation-Max :
- 460W Tc
- DS Breakdown Voltage-Min :
- 500 V
- Continuous Drain Current (ID) :
- 30A
- RoHS :
- Details
- Type :
- PolarHV Power MOSFET
- Drain-source On Resistance-Max :
- 0.2Ohm
- Product Status :
- Active
- Product Type :
- MOSFET
- Power Dissipation :
- 460W
- Power Dissipation (Max) :
- 460W (Tc)
- Surface Mount :
- No
- Fall Time (Typ) :
- 21 ns
- Vgs (Max) :
- ±30V
- FET Feature :
- --
- Published :
- 2006
- Maximum Operating Temperature :
- + 150 C
- JEDEC-95 Code :
- TO-247AD
- Series :
- PolarHV™
- Number of Pins :
- 3
- Tradename :
- PolarHV
- Pin Count :
- 3
- Reach Compliance Code :
- Compliant
- Number of Elements :
- 1
- Terminal Form :
- THROUGH-HOLE
- Rds On (Max) @ Id, Vgs :
- 200m Ω @ 15A, 10V
- Operating Temperature :
- -55°C~150°C TJ
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Drain to Source Voltage (Vdss) :
- 500V
- Current Rating :
- 30A
- Product Category :
- MOSFET
- Transistor Application :
- SWITCHING
- Number of Terminals :
- 3
- Package / Case :
- TO-247-3
- Pbfree Code :
- yes
- Mounting Type :
- Through Hole
- Width :
- 5.3 mm
- Package Shape :
- RECTANGULAR
- Mounting Style :
- Through Hole
- Height :
- 21.46 mm
- Length :
- 16.26 mm
- Rise Time :
- 27ns
- Channel Mode :
- Enhancement
- Lead Free :
- Lead Free
- RoHS Status :
- ROHS3 Compliant
- Case Connection :
- DRAIN
- Qualification Status :
- Not Qualified
- Base Product Number :
- IXTH30
- Operating Mode :
- ENHANCEMENT MODE
- Packaging :
- Tube
- Input Capacitance (Ciss) (Max) @ Vds :
- 4150pF @ 25V
- Polarity/Channel Type :
- N-Channel
- Gate to Source Voltage (Vgs) :
- 30V
- Transistor Element Material :
- SILICON
- Additional Feature :
- AVALANCHE RATED
- Transistor Polarity :
- N-Channel
- Number of Channels :
- 1 Channel
- Voltage - Rated DC :
- 500V
- Manufacturer :
- IXYS
- Element Configuration :
- Single
- Supplier Device Package :
- TO-247 (IXTH)
- Current - Continuous Drain (Id) @ 25°C :
- 30A Tc
- Subcategory :
- MOSFETs
- Turn-Off Delay Time :
- 75 ns
- FET Type :
- N-Channel
- Mount :
- Through Hole
- Configuration :
- Single
- Pulsed Drain Current-Max (IDM) :
- 75A
- Transistor Type :
- 1 N-Channel
- Factory Lead Time :
- 28 Weeks
- Minimum Operating Temperature :
- - 55 C
- Brand :
- IXYS
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Avalanche Energy Rating (Eas) :
- 1200 mJ
- Package :
- Tube
- Gate Charge (Qg) (Max) @ Vgs :
- 70nC @ 10V
- JESD-30 Code :
- R-PSFM-T3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Datasheets
- IXTH30N50P
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N-Channel Tube 200m Ω @ 15A, 10V ±30V 4150pF @ 25V 70nC @ 10V 500V TO-247-3
IXTH30N50P Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 1200 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 4150pF @ 25V.This device has a continuous drain current (ID) of [30A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=500V, the drain-source breakdown voltage is 500V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 75 ns.A maximum pulsed drain current of 75A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 500 V.In order to operate this transistor, a voltage of 500V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IXTH30N50P Features
the avalanche energy rating (Eas) is 1200 mJ
a continuous drain current (ID) of 30A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 75A.
a 500V drain to source voltage (Vdss)
IXTH30N50P Applications
There are a lot of IXYS
IXTH30N50P applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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