IXTH30N50P

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Mfr.Part #
IXTH30N50P
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 500V 30A TO247
Stock
30
In Stock :
30

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Drain to Source Breakdown Voltage :
500V
Terminal Position :
Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Terminations :
3
Power Dissipation-Max :
460W Tc
DS Breakdown Voltage-Min :
500 V
Continuous Drain Current (ID) :
30A
RoHS :
Details
Type :
PolarHV Power MOSFET
Drain-source On Resistance-Max :
0.2Ohm
Product Status :
Active
Product Type :
MOSFET
Power Dissipation :
460W
Power Dissipation (Max) :
460W (Tc)
Surface Mount :
No
Fall Time (Typ) :
21 ns
Vgs (Max) :
±30V
FET Feature :
--
Published :
2006
Maximum Operating Temperature :
+ 150 C
JEDEC-95 Code :
TO-247AD
Series :
PolarHV™
Number of Pins :
3
Tradename :
PolarHV
Pin Count :
3
Reach Compliance Code :
Compliant
Number of Elements :
1
Terminal Form :
THROUGH-HOLE
Rds On (Max) @ Id, Vgs :
200m Ω @ 15A, 10V
Operating Temperature :
-55°C~150°C TJ
Vgs(th) (Max) @ Id :
5V @ 250μA
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Drain to Source Voltage (Vdss) :
500V
Current Rating :
30A
Product Category :
MOSFET
Transistor Application :
SWITCHING
Number of Terminals :
3
Package / Case :
TO-247-3
Pbfree Code :
yes
Mounting Type :
Through Hole
Width :
5.3 mm
Package Shape :
RECTANGULAR
Mounting Style :
Through Hole
Height :
21.46 mm
Length :
16.26 mm
Rise Time :
27ns
Channel Mode :
Enhancement
Lead Free :
Lead Free
RoHS Status :
ROHS3 Compliant
Case Connection :
DRAIN
Qualification Status :
Not Qualified
Base Product Number :
IXTH30
Operating Mode :
ENHANCEMENT MODE
Packaging :
Tube
Input Capacitance (Ciss) (Max) @ Vds :
4150pF @ 25V
Polarity/Channel Type :
N-Channel
Gate to Source Voltage (Vgs) :
30V
Transistor Element Material :
SILICON
Additional Feature :
AVALANCHE RATED
Transistor Polarity :
N-Channel
Number of Channels :
1 Channel
Voltage - Rated DC :
500V
Manufacturer :
IXYS
Element Configuration :
Single
Supplier Device Package :
TO-247 (IXTH)
Current - Continuous Drain (Id) @ 25°C :
30A Tc
Subcategory :
MOSFETs
Turn-Off Delay Time :
75 ns
FET Type :
N-Channel
Mount :
Through Hole
Configuration :
Single
Pulsed Drain Current-Max (IDM) :
75A
Transistor Type :
1 N-Channel
Factory Lead Time :
28 Weeks
Minimum Operating Temperature :
- 55 C
Brand :
IXYS
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Avalanche Energy Rating (Eas) :
1200 mJ
Package :
Tube
Gate Charge (Qg) (Max) @ Vgs :
70nC @ 10V
JESD-30 Code :
R-PSFM-T3
Drive Voltage (Max Rds On,Min Rds On) :
10V
Datasheets
IXTH30N50P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTH30N50P from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Type:PolarHV Power MOSFET, Number of Pins:3, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-247-3, Mounting Type:Through Hole, Number of Channels:1 Channel, IXTH30N50P pinout, IXTH30N50P datasheet PDF, IXTH30N50P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTH30N50P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTH30N50P


N-Channel Tube 200m Ω @ 15A, 10V ±30V 4150pF @ 25V 70nC @ 10V 500V TO-247-3

IXTH30N50P Overview


There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 1200 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 4150pF @ 25V.This device has a continuous drain current (ID) of [30A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=500V, the drain-source breakdown voltage is 500V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 75 ns.A maximum pulsed drain current of 75A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 500 V.In order to operate this transistor, a voltage of 500V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IXTH30N50P Features


the avalanche energy rating (Eas) is 1200 mJ
a continuous drain current (ID) of 30A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 75A.
a 500V drain to source voltage (Vdss)


IXTH30N50P Applications


There are a lot of IXYS
IXTH30N50P applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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