IXTH30N50P
- Mfr.Part #
- IXTH30N50P
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 30A TO247
- Stock
- 30
- In Stock :
- 30
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs (Max) :
- ±30V
- Current Rating :
- 30A
- Product Status :
- Active
- Pulsed Drain Current-Max (IDM) :
- 75A
- Drain to Source Voltage (Vdss) :
- 500V
- Series :
- PolarHV™
- Polarity/Channel Type :
- N-Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 4150pF @ 25V
- FET Type :
- N-Channel
- Channel Mode :
- Enhancement
- Minimum Operating Temperature :
- - 55 C
- Number of Pins :
- 3
- Number of Terminals :
- 3
- Avalanche Energy Rating (Eas) :
- 1200 mJ
- Operating Mode :
- ENHANCEMENT MODE
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn-Off Delay Time :
- 75 ns
- Package :
- Tube
- Number of Channels :
- 1 Channel
- Case Connection :
- DRAIN
- Supplier Device Package :
- TO-247 (IXTH)
- Surface Mount :
- No
- Rise Time :
- 27ns
- Base Product Number :
- IXTH30
- RoHS :
- Details
- Gate Charge (Qg) (Max) @ Vgs :
- 70nC @ 10V
- Rds On (Max) @ Id, Vgs :
- 200m Ω @ 15A, 10V
- Width :
- 5.3 mm
- Number of Elements :
- 1
- Height :
- 21.46 mm
- Gate to Source Voltage (Vgs) :
- 30V
- Mounting Type :
- Through Hole
- Terminal Position :
- Single
- Qualification Status :
- Not Qualified
- Brand :
- IXYS
- Reach Compliance Code :
- Compliant
- Drain to Source Breakdown Voltage :
- 500V
- Package / Case :
- TO-247-3
- Fall Time (Typ) :
- 21 ns
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Continuous Drain Current (ID) :
- 30A
- FET Feature :
- --
- Tradename :
- PolarHV
- Current - Continuous Drain (Id) @ 25°C :
- 30A Tc
- RoHS Status :
- ROHS3 Compliant
- Pin Count :
- 3
- Manufacturer :
- IXYS
- Power Dissipation-Max :
- 460W Tc
- Power Dissipation (Max) :
- 460W (Tc)
- Drain-source On Resistance-Max :
- 0.2Ohm
- Element Configuration :
- Single
- Type :
- PolarHV Power MOSFET
- Factory Lead Time :
- 28 Weeks
- Configuration :
- Single
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Published :
- 2006
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Length :
- 16.26 mm
- Package Shape :
- RECTANGULAR
- Lead Free :
- Lead Free
- Number of Terminations :
- 3
- Product Type :
- MOSFET
- JEDEC-95 Code :
- TO-247AD
- Transistor Element Material :
- SILICON
- Mount :
- Through Hole
- Voltage - Rated DC :
- 500V
- Terminal Form :
- THROUGH-HOLE
- Transistor Application :
- SWITCHING
- Pbfree Code :
- yes
- Additional Feature :
- AVALANCHE RATED
- Mounting Style :
- Through Hole
- Transistor Type :
- 1 N-Channel
- Power Dissipation :
- 460W
- Product Category :
- MOSFET
- Operating Temperature :
- -55°C~150°C TJ
- Packaging :
- Tube
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Maximum Operating Temperature :
- + 150 C
- Subcategory :
- MOSFETs
- JESD-30 Code :
- R-PSFM-T3
- Transistor Polarity :
- N-Channel
- DS Breakdown Voltage-Min :
- 500 V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Datasheets
- IXTH30N50P
IXTH30N50P Documents
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N-Channel Tube 200m Ω @ 15A, 10V ±30V 4150pF @ 25V 70nC @ 10V 500V TO-247-3
IXTH30N50P Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 1200 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 4150pF @ 25V.This device has a continuous drain current (ID) of [30A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=500V, the drain-source breakdown voltage is 500V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 75 ns.A maximum pulsed drain current of 75A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 500 V.In order to operate this transistor, a voltage of 500V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IXTH30N50P Features
the avalanche energy rating (Eas) is 1200 mJ
a continuous drain current (ID) of 30A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 75A.
a 500V drain to source voltage (Vdss)
IXTH30N50P Applications
There are a lot of IXYS
IXTH30N50P applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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