IXTH30N50L2
- Mfr.Part #
- IXTH30N50L2
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 30A TO247
- Stock
- 6,360
- In Stock :
- 6,360
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Channel Mode :
- Enhancement
- Fall Time (Typ) :
- 40 ns
- Power Dissipation :
- 400W
- Transistor Type :
- 1 N-Channel
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- REACH SVHC :
- No SVHC
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Minimum Operating Temperature :
- - 55 C
- Reach Compliance Code :
- Unknown
- Width :
- 5.3 mm
- Power Dissipation-Max :
- 400W Tc
- Drain to Source Voltage (Vdss) :
- 500V
- Channel Type :
- N Channel
- Maximum Operating Temperature :
- + 150 C
- Drain to Source Breakdown Voltage :
- 500V
- Drain-source On Resistance-Max :
- 0.2Ohm
- Rds On (Max) @ Id, Vgs :
- 200m Ω @ 15A, 10V
- Mount :
- Through Hole
- Gate to Source Voltage (Vgs) :
- 20V
- Continuous Drain Current (ID) :
- 30A
- MSL :
- -
- Number of Elements :
- 1
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Power Dissipation (Max) :
- 400W (Tc)
- Brand :
- IXYS
- Package / Case :
- TO-247-3
- Mounting Type :
- Through Hole
- RoHS Status :
- ROHS3 Compliant
- Published :
- 2001
- Operating Mode :
- ENHANCEMENT MODE
- Case Connection :
- DRAIN
- Nominal Vgs :
- 2.5 V
- FET Type :
- N-Channel
- Transistor Polarity :
- N-Channel
- Package :
- Tube
- JESD-609 Code :
- e1
- Supplier Device Package :
- TO-247 (IXTH)
- Gate Charge (Qg) (Max) @ Vgs :
- 240nC @ 10V
- Length :
- 16.26 mm
- Rise Time :
- 117ns
- Factory Lead Time :
- 28 Weeks
- Number of Terminations :
- 3
- Tradename :
- Linear L2
- Type :
- Linear L2 Power MOSFET
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Series :
- Linear L2™
- Packaging :
- Tube
- Transistor Application :
- SWITCHING
- Pbfree Code :
- yes
- Configuration :
- Single
- Product Status :
- Active
- Height :
- 21.46 mm
- Manufacturer :
- IXYS
- Avalanche Energy Rating (Eas) :
- 1500 mJ
- Vgs (Max) :
- ±20V
- Turn-Off Delay Time :
- 94 ns
- Base Product Number :
- IXTH30
- Input Capacitance (Ciss) (Max) @ Vds :
- 8100pF @ 25V
- JEDEC-95 Code :
- TO-247AD
- FET Feature :
- --
- Qualification Status :
- Not Qualified
- Product Type :
- MOSFET
- ECCN Code :
- EAR99
- Pulsed Drain Current-Max (IDM) :
- 60A
- Element Configuration :
- Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Transistor Element Material :
- SILICON
- Operating Temperature :
- -55°C~150°C TJ
- Continuous Drain Current Id :
- 30A
- Product Category :
- MOSFET
- Current - Continuous Drain (Id) @ 25°C :
- 30A Tc
- Qualification :
- -
- Additional Feature :
- AVALANCHE RATED
- Threshold Voltage :
- 2.5V
- Pin Count :
- 3
- Mounting Style :
- Through Hole
- Lead Free :
- Lead Free
- RoHS :
- Details
- Number of Channels :
- 1 Channel
- Number of Pins :
- 3
- Datasheets
- IXTH30N50L2
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N-Channel Tube 200m Ω @ 15A, 10V ±20V 8100pF @ 25V 240nC @ 10V 500V TO-247-3
IXTH30N50L2 Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 1500 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 8100pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 30A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=500V. And this device has 500V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 94 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 60A.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has 2.5V threshold voltage. Operating this transistor requires a 500V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IXTH30N50L2 Features
the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 30A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 94 ns
based on its rated peak drain current 60A.
a threshold voltage of 2.5V
a 500V drain to source voltage (Vdss)
IXTH30N50L2 Applications
There are a lot of IXYS
IXTH30N50L2 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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