IXTH30N50L2

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Mfr.Part #
IXTH30N50L2
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 500V 30A TO247
Stock
6,360
In Stock :
6,360

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Channel Mode :
Enhancement
Fall Time (Typ) :
40 ns
Power Dissipation :
400W
Transistor Type :
1 N-Channel
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
REACH SVHC :
No SVHC
Vgs(th) (Max) @ Id :
4.5V @ 250μA
Minimum Operating Temperature :
- 55 C
Reach Compliance Code :
Unknown
Width :
5.3 mm
Power Dissipation-Max :
400W Tc
Drain to Source Voltage (Vdss) :
500V
Channel Type :
N Channel
Maximum Operating Temperature :
+ 150 C
Drain to Source Breakdown Voltage :
500V
Drain-source On Resistance-Max :
0.2Ohm
Rds On (Max) @ Id, Vgs :
200m Ω @ 15A, 10V
Mount :
Through Hole
Gate to Source Voltage (Vgs) :
20V
Continuous Drain Current (ID) :
30A
MSL :
-
Number of Elements :
1
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Power Dissipation (Max) :
400W (Tc)
Brand :
IXYS
Package / Case :
TO-247-3
Mounting Type :
Through Hole
RoHS Status :
ROHS3 Compliant
Published :
2001
Operating Mode :
ENHANCEMENT MODE
Case Connection :
DRAIN
Nominal Vgs :
2.5 V
FET Type :
N-Channel
Transistor Polarity :
N-Channel
Package :
Tube
JESD-609 Code :
e1
Supplier Device Package :
TO-247 (IXTH)
Gate Charge (Qg) (Max) @ Vgs :
240nC @ 10V
Length :
16.26 mm
Rise Time :
117ns
Factory Lead Time :
28 Weeks
Number of Terminations :
3
Tradename :
Linear L2
Type :
Linear L2 Power MOSFET
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Series :
Linear L2™
Packaging :
Tube
Transistor Application :
SWITCHING
Pbfree Code :
yes
Configuration :
Single
Product Status :
Active
Height :
21.46 mm
Manufacturer :
IXYS
Avalanche Energy Rating (Eas) :
1500 mJ
Vgs (Max) :
±20V
Turn-Off Delay Time :
94 ns
Base Product Number :
IXTH30
Input Capacitance (Ciss) (Max) @ Vds :
8100pF @ 25V
JEDEC-95 Code :
TO-247AD
FET Feature :
--
Qualification Status :
Not Qualified
Product Type :
MOSFET
ECCN Code :
EAR99
Pulsed Drain Current-Max (IDM) :
60A
Element Configuration :
Single
Drive Voltage (Max Rds On,Min Rds On) :
10V
Transistor Element Material :
SILICON
Operating Temperature :
-55°C~150°C TJ
Continuous Drain Current Id :
30A
Product Category :
MOSFET
Current - Continuous Drain (Id) @ 25°C :
30A Tc
Qualification :
-
Additional Feature :
AVALANCHE RATED
Threshold Voltage :
2.5V
Pin Count :
3
Mounting Style :
Through Hole
Lead Free :
Lead Free
RoHS :
Details
Number of Channels :
1 Channel
Number of Pins :
3
Datasheets
IXTH30N50L2
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTH30N50L2 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-247-3, Mounting Type:Through Hole, Number of Terminations:3, Type:Linear L2 Power MOSFET, Operating Temperature:-55°C~150°C TJ, Number of Channels:1 Channel, Number of Pins:3, IXTH30N50L2 pinout, IXTH30N50L2 datasheet PDF, IXTH30N50L2 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTH30N50L2 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTH30N50L2


N-Channel Tube 200m Ω @ 15A, 10V ±20V 8100pF @ 25V 240nC @ 10V 500V TO-247-3

IXTH30N50L2 Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 1500 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 8100pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 30A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=500V. And this device has 500V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 94 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 60A.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has 2.5V threshold voltage. Operating this transistor requires a 500V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

IXTH30N50L2 Features


the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 30A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 94 ns
based on its rated peak drain current 60A.
a threshold voltage of 2.5V
a 500V drain to source voltage (Vdss)


IXTH30N50L2 Applications


There are a lot of IXYS
IXTH30N50L2 applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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