IXTH30N50L
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- Mfr.Part #
- IXTH30N50L
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 30A TO247
- Stock
- 2,567
- In Stock ：
- 2,567
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Subcategory :
- MOSFETs
- Package :
- Tube
- Pulsed Drain Current-Max (IDM) :
- 60A
- Number of Elements :
- 1
- Product Type :
- MOSFET
- Product Status :
- Active
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Series :
- --
- Package / Case :
- TO-247-3
- Reach Compliance Code :
- Compliant
- Power Dissipation-Max :
- 400W Tc
- Terminal Form :
- THROUGH-HOLE
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- RoHS Status :
- ROHS3 Compliant
- Case Connection :
- DRAIN
- Mounting Style :
- Through Hole
- JEDEC-95 Code :
- TO-247
- Pbfree Code :
- yes
- Package Shape :
- RECTANGULAR
- Qualification Status :
- Not Qualified
- Polarity/Channel Type :
- N-Channel
- JESD-30 Code :
- R-PSFM-T3
- Surface Mount :
- No
- Power Dissipation (Max) :
- 400W (Tc)
- Transistor Polarity :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 240nC @ 10V
- Mount :
- Through Hole
- Continuous Drain Current (ID) :
- 30A
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Supplier Device Package :
- TO-247 (IXTH)
- FET Feature :
- --
- JESD-609 Code :
- e1
- DS Breakdown Voltage-Min :
- 500V
- Terminal Position :
- Single
- Published :
- 2007
- Number of Terminals :
- 3
- Packaging :
- Tube
- Rds On (Max) @ Id, Vgs :
- 200m Ω @ 15A, 10V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Current - Continuous Drain (Id) @ 25°C :
- 30A Tc
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Type :
- 1 N-Channel
- Vgs (Max) :
- ±20V
- Mounting Type :
- Through Hole
- Base Product Number :
- IXTH30
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Brand :
- IXYS
- Product Category :
- MOSFET
- Pin Count :
- 3
- Drain-source On Resistance-Max :
- 0.2Ohm
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Channels :
- 1 Channel
- Number of Terminations :
- 3
- Manufacturer :
- IXYS
- FET Type :
- N-Channel
- Configuration :
- SINGLE WITH BUILT-IN DIODE AND RESISTOR
- Transistor Application :
- SWITCHING
- Avalanche Energy Rating (Eas) :
- 1500 mJ
- RoHS :
- Details
- Transistor Element Material :
- SILICON
- Operating Mode :
- ENHANCEMENT MODE
- Input Capacitance (Ciss) (Max) @ Vds :
- 10200pF @ 25V
- Drain to Source Voltage (Vdss) :
- 500V
- Datasheets
- IXTH30N50L
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N-Channel Tube 200m Ω @ 15A, 10V ±20V 10200pF @ 25V 240nC @ 10V 500V TO-247-3
IXTH30N50L Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 1500 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 10200pF @ 25V.This device conducts a continuous drain current (ID) of 30A, which is the maximum continuous current transistor can conduct.Pulsed drain current is maximum rated peak drain current 60A.A normal operation of the DS requires keeping the breakdown voltage above 500V.This transistor requires a drain-source voltage (Vdss) of 500V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IXTH30N50L Features
the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 30A
based on its rated peak drain current 60A.
a 500V drain to source voltage (Vdss)
IXTH30N50L Applications
There are a lot of IXYS
IXTH30N50L applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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